Metrology method and inspection apparatus, lithographic system and device manufacturing method

Patent metadata

Field	Value
Publication number	US-9946167-B2
Application number	US-201514824696-A
Country	US
Kind code	B2
Filing date	Aug 12, 2015
Priority date	Nov 12, 2010
Publication date	Apr 17, 2018
Grant date	Apr 17, 2018

Abstract

Methods are disclosed for measuring target structures formed by a lithographic process on a substrate. A grating structure within the target is smaller than an illumination spot and field of view of a measurement optical system. The optical system has a first branch leading to a pupil plane imaging sensor and a second branch leading to a substrate plane imaging sensor. A spatial light modulator is arranged in an intermediate pupil plane of the second branch of the optical system. The SLM imparts a programmable pattern of attenuation that may be used to correct for asymmetries between the first and second modes of illumination or imaging. By use of specific target designs and machine-learning processes, the attenuation patterns may also be programmed to act as filter functions, enhancing sensitivity to specific parameters of interest, such as focus.

First claim

The invention claimed is:

1. A method comprising:
using a lithographic process to form a periodic structure on a substrate;
a first measurement comprising detecting a first image of the periodic structure, while illuminating the structure with a first beam of radiation, the first image being formed using a first selected part of diffracted radiation;
a second measurement comprising detecting a second image of the periodic structure, while illuminating the structure with a second beam of radiation, the second image being formed using a second selected part of the diffracted radiation which is symmetrically opposite to the first part, in a diffraction spectrum of the periodic structure;
using a difference in intensity values derived from the detected first and second images together to determine a property of the periodic structure; and
controlling a spatial light modulator to apply a varying non-binary optical attenuation over the first and second selected parts of the diffracted radiation prior to detecting the first and second images respectively.

2. The method of claim 1 , wherein:
the first and second measurements are performed without rotating the substrate using different optical paths within a measurement optical system, and
the varying optical attenuation is configured to reduce an influence on the determined property of the difference in optical paths between the first and second measurements.

3. The method of claim 2 , wherein a plurality of different patterns of varying attenuation are defined and associated with different available optical paths, the method further comprising:
selecting automatically an attenuation pattern according to the optical path used in each of the measurements and controlling the spatial light modulator to apply the selected attenuation pattern to the diffracted radiation.

4. The method of claim 2 , wherein:
the first and second measurements are performed using respectively a first and a second illumination mode of the measurement optical system, such that the first and second beams of radiation are incident on the periodic structure from symmetrically opposed angles relative to an optical axis of the measurement optical system, without rotating the substrate relative to the measurement optical system, and
at least first and second attenuation patterns are defined to compensate for asymmetry between optical paths defining the first and second illumination modes.

5. The method of claim 2 , wherein the first and second measurements are performed using respectively a first and a second imaging mode of the measurement optical system, such that the first and second images are formed using portions of radiation diffracted by the periodic structure to diametrically opposed angles relative to an optical axis of the measurement optical system, without rotating the substrate relative to the measurement optical system, the selected part of the diffracted radiation passing through different parts of the spatial light modulator in the first and second imaging modes.

6. The method of claim 2 , further comprising:
a calibration wherein a pattern for attenuation is at least partially determined using the results of a plurality of calibration measurements performed on a substrate, which is measured at different rotations through each of the optical paths.

7. The method of claim 6 , wherein the calibration measurements are performed using an image sensor which is located in a conjugate pupil plane of the optical system.

8. The method of claim 6 , wherein the calibration measurements are performed using a calibration target having a periodic structure larger than a field of view of the measurement optical system.

9. The method of claim 1 , wherein the varying optical attenuation implements first and second filter functions for the respective measurement step, the filter functions being calculated to enhance sensitivity of the calculated difference to a property of interest.

10. The method of claim 9 , further comprising implementing a machine-learning process to derive the filter functions from measurements of a training set of structures.

11. The method of claim 10 , wherein the machine-learning process comprises principal component analysis.

12. The method of claim 9 , wherein the filter functions are calculated such that the calculated difference is related directly to the performance parameter of the lithographic process, rather than a feature of the periodic structure itself.

13. The method of claim 1 , wherein the lithographic process is an optical lithography process and is performed so that asymmetry between side wall angles in the periodic structure is sensitive to focus variation in the lithographic process.

14. The method of claim 1 , wherein the lithographic process is performed so that a certain asymmetry of profile of the periodic structure is made sensitive to a particular performance parameter of the lithographic process.

15. The method of claim 1 , wherein the periodic structure occupies less than half the area of the field of view such that first or second images of a plurality of periodic structures formed and detected simultaneously.

16. The method of claim 1 , wherein a correction is applied to at least one of the detected first and second images and the measured asymmetry, based at least in part on the position of the periodic structure within a field of view of the measurement optical system.

17. The method of claim 1 , wherein the spatial light modulator is used also in the selection of the first and second parts of the diffracted radiation.

18. A method of manufacturing devices comprising:
a device pattern is applied to a series of substrates using a lithographic process;
inspecting at least one periodic structure formed as part of or beside the device pattern on at least one of the substrates using an inspection method comprising:
using a lithographic process to form a periodic structure on a substrate;
a first measurement comprising detecting a first image of the periodic structure, while illuminating the structure with a first beam of radiation, the first image being formed using a first selected part of diffracted radiation;
a second measurement comprising detecting a second image of the periodic structure, while illuminating the structure with a second beam of radiation, the second image being formed using a second selected part of the diffracted radiation which is symmetrically opposite to the first part, in a diffraction spectrum of the periodic structure;
using a difference in intensity values derived from the detected first and second images together to determine a property of the periodic structure; and

controlling a spatial light modulator to apply a varying non-binary optical attenuation over the first and second selected parts of the diffracted radiation prior to detecting the first and second images respectively; and
controlling the lithographic process for later substrates in accordance with the result of the inspection method.

Assignees

• Asml Netherlands Bv

Inventors

• Smilde Hendrik Jan Hidde
• Bleeker Arno Jan
• Coene Willem Marie Julia Marcel
• Warnaar Patrick
• Kubis Michael

Classifications

• G03F7/70633 Primary

  Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching · CPC title

• G06N99/005

  Physics · mapped topic

• G03F7/70625

  Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness · CPC title

• G03F7/70641

  Focus · CPC title

• G03F7/70483 Primary

  Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring · CPC title