Systems and methods for enhancing mobility of atomic or molecular species on a substrate at reduced bulk temperature using acoustic waves, and structures formed using same
US-9303309-B2 · Apr 5, 2016 · US
US9945032B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9945032-B2 |
| Application number | US-201615053878-A |
| Country | US |
| Kind code | B2 |
| Filing date | Feb 25, 2016 |
| Priority date | Jan 11, 2013 |
| Publication date | Apr 17, 2018 |
| Grant date | Apr 17, 2018 |
A practical reading order for non-experts. Skip the full description unless you need deep technical detail.
What the patent document calls the invention.
A short plain-language summary of the technical disclosure.
Who owns or filed the patent and who is credited as inventor.
Filing, priority, publication, and grant dates set the timeline.
The legal scope of protection — read this for what is actually claimed.
Technology tags used to group this patent with similar filings.
Prior art links and similar publications in this corpus.
Official abstract text for this publication.
Under one aspect, a structure is provided that includes a substrate including a first material having a threshold temperature above which the first material is damaged and a layer consisting essentially of a second material molecularly bonded to the first material of the substrate. The second material is formed on the substrate at a reaction temperature that is higher than the threshold temperature of the first material. An interface between the substrate and the second material is a substantially defect-free surface.
Opening claim text (preview).
What is claimed: 1. A structure comprising: a substrate comprising a first material having a threshold temperature above which the first material is damaged; and a layer consisting essentially of silicon nitride, graphene, diamond, titanium dioxide, titanium boride, zirconium oxide, yttria-stabilized zirconium, boron carbide, boron nitride, or metal molecularly bonded to the first material of the substrate, the layer being formed on the substrate at a reaction temperature that is higher than the threshold temperature of the first material, wherein an interface between the substrate and the layer comprises annealed kinks, annealed terraces, or annealed slip faults. 2. The structure of claim 1 , wherein the substrate comprises an integrated circuit, a chalcogenide glass, a ZBLAN glass, or a polymer. 3. The structure of claim 2 , wherein the polymer comprises polycarbonate, poly(methyl methacrylate), polystyrene, polyvinyl chloride, or polyethylene terephthalate.
Polymer of monoethylenically unsaturated hydrocarbon · CPC title
characterised by the process of coating · CPC title
using coherent light, UV to IR, e.g. lasers · CPC title
Acoustic wave CVD · CPC title
Ester, halide or nitrile of addition polymer · CPC title
Related publications grouped by family.
Answers are generated from the same data shown on this page.