Gas shower device, chemical vapor deposition device and method

Patent metadata

Field	Value
Publication number	US-9945031-B2
Application number	US-201514742408-A
Country	US
Kind code	B2
Filing date	Jun 17, 2015
Priority date	Jun 18, 2014
Publication date	Apr 17, 2018
Grant date	Apr 17, 2018

Abstract

A gas shower device, a device and a method for chemical vapor deposition. A gas shower device has a showerhead. The showerhead includes a center region and a periphery region surrounding the center region; the center region and periphery region of the showerhead have a plurality of second gas-outlets which are arranged in parallel; the second gas-outlets are used to output the second gas; a first gas-outlet arranged between two adjacent second gas-outlets, includes the first sub-gas-outlet located in the center region and the second sub-gas-outlet located in the periphery region; the first sub-gas-outlet and the second sub-gas-outlet are mutually isolated, the first sub-gas-outlet is used to output the first gas and the second sub-gas-outlet is used to output the second gas; a first gas channel is connected to the first sub-gas-outlet; a second gas channel is connected to the second gas-outlet and the second sub-gas-outlet. The film formation quality is improved by using the chemical vapor deposition device with the gas shower device.

First claim

The invention claimed is:

1. A gas shower device, comprising:
a showerhead, a gas injection region at the bottom of the showerhead includes a center region and a periphery region surrounding the center region;
the center region and periphery region of the showerhead have a plurality of second gas-outlets which are strip shaped gas channels all of which having centerlines arranged in parallel relative to each other;
the second gas-outlets are used to output a second gas;
a first gas-outlet is arranged between two adjacent second gas-outlets, the first gas-outlet and the second gas-outlet are alternatively distributed, the first gas-outlet comprises a first sub-gas-outlet located in the center region and a second sub-gas-outlet located in the periphery region;
the first sub-gas-outlet and the second sub-gas-outlet are mutually isolated, the first sub-gas-outlet is used to output a first gas and the second sub-gas-outlet is used to output the second gas, the first gas and the second gas have film formation reaction;
a first gas channel is connected to the first sub-gas-outlet, the first gas passes through the first gas channel and outputs from the first sub-gas-outlet;
a second gas channel is connected to the second gas-outlet and the second sub-gas-outlet, the second gas channel and the first gas channel are mutually isolated;
the second gas passes through the second gas channel and outputs from the second gas-outlet and the second sub-gas-outlet.

2. The gas shower device of claim 1 , wherein, the size of the second gas-outlet is larger than the first.

3. The gas shower device of claim 2 , wherein, the first gas-outlet are strip-shaped gas channels.

4. The gas shower device of claim 3 , wherein, the width of the first gas-outlet is smaller than the width of the second gas-outlet; the width of the first sub-gas-outlet is identical with the width of the second sub-gas-outlet.

5. The gas shower device of claim 1 , wherein, for the first gas-outlet, the distance between the first sub-gas-outlet and the second sub-gas-outlet is 1 mm-3 mm.

6. The gas shower device of claim 1 , wherein, the radius of the center region is 5 mm-30 mm smaller than the radius of the periphery region.

7. The gas shower device of claim 1 , wherein, the distance from the center axis of the first gas-outlet to the center axis of the adjacent second gas-outlet is 10 mm-15 mm.

8. A chemical vapor deposition device, comprising:
a reaction chamber;
a carrier located at the bottom of the reaction chamber, wherein the carrier rotates around an axis, and the carrier has the wafer mounting region, the wafer mounted on the surface of wafer mounting region;
an exhaust channel located at the bottom of the reaction chamber;
the gas shower device of claim 1 , wherein the gas shower device is located on the top of the reaction chamber, and wherein
the first gas-outlet and the second gas-outlet face the substrate, which are used to deliver the first gas and the second gas to the space between the gas shower device and the carrier;
the first gas channel is connected to the external of the reaction chamber and the first gas is inputted into the first gas channel from the external of the reaction chamber;
the second gas channel is connected to communicate with the reaction chamber and outside of the reaction chamber, and the second gas is inputted into the second gas channel from outside the reaction chamber.

9. The chemical vapor deposition device of claim 8 , wherein the first gas includes the metalorganic gas or group V gas, and the second gas includes one or more gas selected from nitrogen-containing gas, hydrogen-containing gas and oxygen-containing gas.

10. The chemical vapor deposition device of claim 9 , wherein the second gas consists of a gas selected from a group consisting of nitrogen, hydrogen, oxygen, and ammonia gas.

11. The chemical vapor deposition device of claim 9 , wherein the second gas contains the mixed gas of nitrogen and hydrogen, or the mixed gas of nitrogen, hydrogen and ammonia gas.

12. The chemical vapor deposition device of claim 11 , wherein the second gas further includes inert gas.

13. The chemical vapor deposition device of claim 9 , wherein, when the first gas contains metalorganic gas, it does not contain group V gas;
when the first gas contains group V gas, it does not contain metalorganic gas;
the metalorganic gas and group V gas will be output from the first sub-gas-outlet alternatively.

14. The chemical vapor deposition device of claim 8 , wherein the diameter of wafer mounting region is larger than the diameter of center region and smaller than the outer diameter of periphery region.

15. The chemical vapor deposition device of claim 8 , further comprising a gas flow confinement ring located surrounding the gas shower device and the carrier, surrounds the space between the gas shower device and the carrier; the heater located under the bottom of the carrier is used to heat the substrate.

16. A chemical vapor deposition method employing chemical vapor deposition device of claim 8 includes:
placing the wafer on the surface of the wafer mounting region of the carrier;
outputting the first gas from the first sub-gas-outlet toward the carrier surface, when the first gas is inputted to the first gas channel from the external of the reaction chamber;
outputting the second gas from the second gas-outlet and the second sub-gas-outlet toward the carrier surface, the second gas is inputted to the second gas channel from the external of the chamber, wherein:
the second gas output from the second gas-outlet of the showerhead center region is mixed with the first gas output from the first sub-gas-outlet in the space between the gas shower device and the substrate, which reacts to form film at the surface of the wafer;
the second gas output from the second gas-outlet of the showerhead periphery region and from the second sub-gas-outlet forms a gas curtain, the gas curtain surrounds the space between showerhead center region and the carrier surface.

17. The chemical vapor deposition method of claim 16 , wherein, the flow rate of the second gas output from the second sub-gas-outlet is 85%-115% of the flow rate of the first gas output from the first sub-gas-outlet.

18. The chemical vapor deposition method of claim 16 , wherein, the flow rate of the second gas output from the second gas-outlet is faster than the flow rate of the first gas output from the first sub-gas-outlet.

19. A gas shower device, comprising:
a showerhead, a gas injection region at the bottom of the showerhead includes a center region and a periphery region surrounding the center region;
the center region and periphery region of the showerhead have a plurality of second gas-outlets;
the second gas-outlets are used to output a second gas;
a first gas-outlet is arranged between two adjacent second gas-outlets, the first gas-outlet and the second gas-outlet are alternatively distributed, the first gas-outlet comprises a first sub-gas-outlet located in the center region and a second sub-gas-outlet located in the periphery region;
the first sub-gas-outlet and the second sub-gas-outlet are mutually isolated, the first sub-gas-outlet is used to output a first gas and the second sub-gas-outlet is used to output the second gas, the first gas and the second gas have film formation reaction;
a first gas channel is connected to the first sub-gas-outlet, the first gas passes through the first gas channel and outputs from the first sub-gas-outlet;
a second gas channel is connect

Assignees

• Advanced Micro Fabrication Equipment Inc China

Inventors

• Jiang Yong
• Du Zhiyou

Classifications

• C23C16/45565 Primary

  Shower nozzles · CPC title

• C23C16/45574

  Nozzles for more than one gas · CPC title