Integrated sensor arrays for biological and chemical analysis
US-8936763-B2 · Jan 20, 2015 · US
US9944981B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9944981-B2 |
| Application number | US-201313797865-A |
| Country | US |
| Kind code | B2 |
| Filing date | Mar 12, 2013 |
| Priority date | Oct 22, 2008 |
| Publication date | Apr 17, 2018 |
| Grant date | Apr 17, 2018 |
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Methods and apparatus relating to FET arrays for monitoring chemical and/or biological reactions such as nucleic acid sequencing-by-synthesis reactions. Some methods provided herein relate to improving signal (and also signal to noise ratio) from released hydrogen ions during nucleic acid sequencing reactions.
Opening claim text (preview).
What is claimed: 1. An apparatus comprising: an array of sensors, a sensor of the array of sensors including an electrode structure in communication with an ion-sensitive field effect-transistor (ISFET); a structure defining an array of reaction chambers, a reaction chamber of the array of reaction chambers having a sidewall surface and having a lower surface overlying the electrode structure of the sensor; and a buffering inhibitor disposed on at least one of the sidewall surface or the lower surface of the reaction chamber. 2. The apparatus of claim 1 , wherein the buffering inhibitor includes a phospholipid. 3. The apparatus of claim 2 , wherein the phospholipid includes phosphatidylcholine, phosphatidylethanolamine, phosphatidylglycerol, or phosphatidylserine. 4. The apparatus of claim 1 , wherein the buffering inhibitor includes a sulfonic acid surfactant. 5. The apparatus of claim 4 , wherein the sulfonic acid surfactant includes poly(ethylene glycol) 4-nonylphenyl 3-sulfopropyl ether (PNSE), poly(styrenesulfonic acid), or a salt thereof. 6. The apparatus of claim 1 , wherein the buffering inhibitor includes poly(diallydimethylammonium), tetramethyl ammonium, or a salt thereof. 7. The apparatus of claim 1 , wherein the buffering inhibitor is covalently bound to the at least one of the sidewall surface or the lower surface of the reaction chamber. 8. The apparatus of claim 1 , wherein the buffering inhibitor is non-covalently bound to the at least one of the sidewall surface or the lower surface of the reaction chamber. 9. The apparatus of claim 1 , wherein the ion sensitive field effect transistor is responsive to pH. 10. The apparatus of claim 1 , wherein the ISFET communicates with the electrode through a floating gate. 11. The apparatus of claim 1 , wherein the ISFET defines a solid-state device. 12. The apparatus of claim 1 , further comprising a floating gate to communicate a charge between the electrode structure and the ISFET.
Manufacture or treatment · CPC title
involving nucleic acid arrays, e.g. sequencing by hybridisation · CPC title
being a sensor, e.g. electrode · CPC title
Electricity · mapped topic
specially adapted for biomolecules, e.g. gate electrode with immobilised receptors · CPC title
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