Light emitting diode device with luminescent material

Patent metadata

Field	Value
Publication number	US-9944849-B2
Application number	US-201514840449-A
Country	US
Kind code	B2
Filing date	Aug 31, 2015
Priority date	Dec 17, 2009
Publication date	Apr 17, 2018
Grant date	Apr 17, 2018

Abstract

The invention provides a light emitting diode device comprising a light emitting diode arranged on a substrate and a wavelength converting element. The wavelength converting element contains as a luminescent material a Mn 4+ -activated fluoride compound having a garnet-type crystal structure. The Mn 4+ -activated fluoride compound preferably answers the general formula {A 3 }[B 2-x-y Mn x Mg y ](Li 3 )F 12-d O d , in which formula A stands for at least one element selected from the series consisting of Na + and K + and B stands for at least one element selected from the series consisting of Al 3+ , B 3+ , Sc 3+ , Fe 3+ , Cr 3+ , Ti 4+ and In 3+ , and in which formula x ranges between 0.02 and 0.2, y ranges between 0.0 (and incl. 0.0) and 0.4 and d ranges between 0 (and incl. 0) and 1. Said compound is most preferably {Na 3 }[Al 2-x-y Mn x Mg y ](Li 3 )F 12-d O d .

First claim

The invention claimed is:

1. A light emitting diode device comprising:
an AlInGaN-type light emitting diode,
a first ceramic platelet formed of a Mn 4+ -activated fluoride compound, wherein the Mn 4+ -activated fluoride compound has a garnet-type crystal structure, the first ceramic platelet adjacent to the AlInGaN-type light emitting diode,
a second ceramic platelet formed of a yellow phosphor atop the first ceramic platelet, and
a lens placed on the second ceramic platelet.

2. A light emitting diode device according to claim 1 , wherein the Mn 4+ -activated fluoride compound has the formula {A 3 }[B 2-x-y Mn x Mg y ](Li 3 )F 12-d O d , wherein A is at least one element selected from the series consisting of Na + and K + , B is at least one element selected from the series consisting of Al 3+ , B 3+ , Sc 3+ , Fe 3+ , Cr 3+ , Ti 4+ and In 3+ , 0.02<x<0.2, 0.0≤y<0.4, and 0≤d<1.

3. A light emitting diode device according to claim 2 , wherein the composition of the Mn 4+ -activated fluoride compound material has the formula {Na 3 }[Al 2-x-y Mn x Mg y ](Li 3 )F 12-d O d .

4. A light emitting diode device according to claim 1 , wherein the light emitting diode emits light having a peak wavelength of about 420-470 nm.

5. A light emitting diode device according to claim 1 , wherein the Mn 4+ -activated fluoride compound emits light in the range of 600 to 660 nm.

6. A light emitting diode device comprising:
a GaInN-type light emitting diode, and
a wavelength converting Mn 4+ -activated fluoride compound with a garnet-type crystal structure mixed with silicone, wherein the silicone is formed into a lens positioned adjacent the GaInN-type light emitting diode.

7. A light emitting diode device comprising:
a light emitting diode, and
a wavelength converting Mn 4+ -activated fluoride compound with a garnet-type crystal structure compounded with a transparent fluoroplastic.

8. A light emitting diode device according to claim 7 , wherein the transparent fluoroplastic and the Mn 4+ -activated fluoride compound have matching indices of refraction.

9. A material comprising a composite of {A 3 }[B 2-x-y Mn x Mg y ](Li 3 )F 12-d O d type garnet and an oxide garnet, wherein A is at least one element selected from the series consisting of Na + and K + , B is at least one element selected from the series consisting of Al 3+ , B 3+ , Sc 3+ , Fe 3+ , Cr 3+ , Ti 4+ and In 3+ , 0.02<x<0.2, 0.0≤y<0.4, and 0≤d<1.

10. The material of claim 9 wherein the oxide garnet comprises one of Y 3 Al 5 O 12 , Mg 3 Al 2 Si 3 O 12 , and Ca 3 Al 2 Si 3 O 12 .

11. The material of claim 9 wherein the {A 3 }[B 2-x-y Mn x Mg y ](Li 3 )F 12-d O d type garnet is {Na 3 }[Al 2-x-y Mn x Mg y ](Li 3 )F 12-d O d phosphor particles, wherein the {Na 3 }[Al 2-x-y Mn x Mg y ](Li 3 )F 12-d O d particles are surrounded by a shell formed from the oxide garnet.

12. The material of claim 9 wherein the {A 3 }[B 2-x-y Mn x Mg y ](Li 3 )F 12-d O d type garnet is {Na 3 }[Al 2-x-y Mn x Mg y ](Li 3 )F 12-d O d phosphor particles, wherein the {Na 3 }[Al 2-x-y Mn x Mg y ](Li 3 )F 12-d O d particles are coated with the oxide garnet.

13. A material comprising mixed crystal A a B 1-a , where is A is {Na 3 }[Al 2-x-y Mn x Mg y ](Li 3 )F 12-d O d and B is at least one oxide garnet, and 0<a<1, 0.02<x<0.2, 0.0≤y<0.4, and 0≤d<1.

14. The material of claim 13 wherein the at least one oxide garnet comprises one of Y 3 Al 5 O 12 , Mg 3 Al 2 Si 3 O 12 , and Ca 3 Al 2 Si 3 O 12 .

Assignees

• Koninklijke Philips Nv

Inventors

• Meyer Joerg
• Weiler Volker
• Schmidt Peter J

Classifications

• C04B2235/3262

  Manganese oxides, manganates, rhenium oxides or oxide-forming salts thereof, e.g. MnO · CPC title

• C04B2235/3286

  Gallium oxides, gallates, indium oxides, indates, thallium oxides, thallates or oxide forming salts thereof, e.g. zinc gallate · CPC title

• C09K11/7774

  Aluminates · CPC title

• C04B2235/3224

  Rare earth oxide or oxide forming salts thereof, e.g. scandium oxide · CPC title

• C04B35/553

  based on fluorides · CPC title