Systems, methods, and apparatus for integrated tuning capacitors in charging coil structure

Patent metadata

Field	Value
Publication number	US-9941708-B2
Application number	US-201514802012-A
Country	US
Kind code	B2
Filing date	Jul 17, 2015
Priority date	Nov 5, 2014
Publication date	Apr 10, 2018
Grant date	Apr 10, 2018

Abstract

Systems, methods, and apparatus are disclosed for power transfer including a plurality of coil structures located over a ferrite element, the plurality of coil structures configured to generate a high flux region and a low flux region, the low flux region being located between the plurality of coil structures, and a tuning capacitance located directly over the ferrite element in the low flux region.

First claim

What is claimed is:

1. A device for power transfer, comprising:
a plurality of coil structures located over a ferrite element, the plurality of coil structures configured to generate a high flux region and a low flux region, the low flux region being located between the plurality of coil structures; and
a tuning capacitance located directly over the ferrite element in the low flux region.

2. The device of claim 1 , wherein the plurality of coil structures are “D” shaped.

3. The device of claim 1 , wherein the plurality of coil structures comprise multiple vertically stacked coils.

4. The device of claim 1 , wherein the low flux region is dependent on an amount of current present in the plurality of coil structures.

5. The device of claim 1 , wherein the tuning capacitance comprises a plurality of surface mount capacitors located on a printed circuit board located between the plurality of coil structures directly over the ferrite element in the low flux region.

6. The device of claim 1 , wherein an electrical characteristic of the high flux region defines an electrical characteristic of the low flux region.

7. The device of claim 1 , wherein the high flux region is formed by a plurality of high flux regions in an absence of a charging-receiving structure.

8. The device of claim 1 , wherein the high flux region is formed by a plurality of high flux regions in a presence of a charging-receiving structure.

9. A method for power transfer, comprising:
locating a plurality of coil structures over a ferrite element;
generating a high flux region and a low flux region, the low flux region being located between the plurality of coil structures; and
locating a tuning capacitance directly over the ferrite element in the low flux region.

10. The method of claim 9 , further comprising forming the plurality of coil structures as “D” shaped.

11. The method of claim 9 , further comprising forming the plurality of coil structures as multiple vertically stacked coils.

12. The method of claim 9 , wherein the low flux region is dependent on an amount of current present in the plurality of coil structures.

13. The method of claim 9 , further comprising forming the tuning capacitance as a plurality of surface mount capacitors located on a printed circuit board located between the plurality of coil structures directly over the ferrite element in the low flux region.

14. The method of claim 9 , further comprising using an electrical characteristic of the high flux region to define an electrical characteristic of the low flux region.

15. The method of claim 9 , further comprising forming the high flux region using a plurality of high flux regions in an absence of a charging-receiving structure.

16. The method of claim 9 , further comprising forming the high flux region using a plurality of high flux regions in a presence of a charging-receiving structure.

17. A device for power transfer, comprising:
means for generating a high flux region and a low flux region, the low flux region being located between a plurality of coil structures; and
means for locating a tuning capacitance directly over a ferrite element in the low flux region.

18. The device of claim 17 , further comprising means for forming the plurality of coil structures as “D” shaped.

19. The device of claim 17 , further comprising means for forming the high flux region using a plurality of high flux regions in an absence of a charging-receiving structure.

20. The device of claim 17 , further comprising means for forming the high flux region using a plurality of high flux regions in a presence of a charging-receiving structure.

Assignees

• Qualcomm Inc

Inventors

• Keeling Nicholas Athol
• Kissin Michael Le Gallais
• Budhia Mickel Bipin
• Huang Chang-Yu
• Beaver Jonathan
• Hao Hao
• Camasca Ramirez Claudio Armando

Classifications

• H02J50/70 Primary

  involving the reduction of electric, magnetic or electromagnetic leakage fields · CPC title

• B60L53/124

  Detection or removal of foreign bodies · CPC title

• B60L53/126

  Methods for pairing a vehicle and a charging station, e.g. establishing a one-to-one relation between a wireless power transmitter and a wireless power receiver · CPC title

• B60L53/122

  Circuits or methods for driving the primary coil, e.g. supplying electric power to the coil · CPC title

• H02J2105/37

  exchanging power with electric vehicles [EV] or with hybrid electric vehicles [HEV] · CPC title