Isolator and method of forming an isolator

Patent metadata

Field	Value
Publication number	US-9941565-B2
Application number	US-201514922037-A
Country	US
Kind code	B2
Filing date	Oct 23, 2015
Priority date	Oct 23, 2015
Publication date	Apr 10, 2018
Grant date	Apr 10, 2018

Abstract

An isolator device and a corresponding method of forming the isolator device to include first and second electrodes, a layer of first dielectric material between the first and second electrodes, and at least one region of second dielectric material between the layer of first dielectric material and at least one of the first and second electrodes. The second dielectric material has a higher relative permittivity than the first dielectric material.

First claim

The invention claimed is:

1. An isolator device comprising:
first and second electrodes;
a layer of a first dielectric material between the first and second electrodes;
a first layer of a second dielectric material between the layer of first dielectric material and the first electrode; and
a second layer of the second dielectric material between the layer of first dielectric material and the second electrode,
wherein the second dielectric material has a higher relative permittivity than the first dielectric material.

2. The device of claim 1 , wherein the first layer of the second dielectric material is located proximate edges of the first electrode and the second layer of the second dielectric material is located proximate edges of the second electrode.

3. The device of claim 1 , wherein each of the first and second electrodes comprises a plate or coil.

4. The device of claim 1 , wherein a thickness of the layer of first dielectric material is between around 10 μm and around 80 μm.

5. The device of claim 1 , wherein a thickness of the first and second layers of the second dielectric material is around 1 μm.

6. The device of claim 1 , wherein one of the first and second electrodes is formed on a substrate.

7. The device of claim 1 , wherein the first dielectric material is polyimide, and/or the second dielectric material is one of silicon nitride, sapphire, tantalum pentoxide, strontium titanate, bismuth ferrite and barium strontium titanate.

8. The device of claim 1 , wherein the first and second layers of the second dielectric material substantially surround the layer of first dielectric material.

9. The device of claim 1 ,
further comprising a region of a third dielectric material between the layer of first dielectric material and at least one of the first or second electrodes.

10. The device of claim 9 , wherein the second dielectric material is different from the third dielectric material.

11. The device of claim 9 , wherein the second dielectric material is the same as the third dielectric material.

12. The device of claim 9 , wherein the third dielectric material has a higher relative permittivity than the first dielectric material.

13. The device of claim 1 , wherein the first layer of the second dielectric material does not contact the first electrode and/or the second layer of the second dielectric material does not contact the second electrode.

14. The device of claim 13 , wherein the first layer of the second dielectric material is separated from the first electrode by between around 0.1 μm and around 5 μm and the second layer of the second dielectric material is separated from the second electrode by between around 0.1 μm and around 5 μm.

15. The device of claim 13 , further comprising:
a further layer between the first layer of the second dielectric material and the first electrode or between the second layer of the second dielectric material and the second electrode.

16. The device of claim 15 , wherein the further layer is a passivation layer.

17. An isolator device comprising:
first and second electrodes;
at least one region of a first dielectric material between the first and second electrodes;
a first layer of a second dielectric material between the region of first dielectric material and the first electrode; and
a second layer of the second dielectric material between the region of first dielectric material and the second electrode,
wherein the second dielectric material has a higher relative permittivity than the first dielectric material.

18. The device of claim 17 , wherein the at least one region of first dielectric material comprises at least one layer of first dielectric material between the first layer of second dielectric material and the second layer of second dielectric material.

19. The isolator device of claim 17 , wherein the first layer of the second dielectric material is located proximate edges of the first electrode and the second layer of the second dielectric material is located proximate edges of the second electrode.

20. An electronic device including an isolator device, wherein the isolator device comprises:
first and second electrodes;
a layer of a first dielectric material between the first and second electrodes;
a first layer of a second dielectric material between the layer of first dielectric material and the first electrode; and
a second layer of the second dielectric material between the layer of first dielectric material and the second electrode,
wherein the second dielectric material has a higher relative permittivity than the first dielectric material.

Assignees

• Analog Devices Global

Inventors

• Mcloughlin Conor John
• Flynn Michael John
• O'Sullivan Laurence B
• Geary Shane
• O'Brien Stephen
• Stenson Bernard P
• Chen Baoxing
• Carroll Sarah
• Morrissey Michael
• Mcguinness Patrick M

Classifications

• H10W90/753

  between laterally-adjacent chips · CPC title

• H01P1/36 Primary

  Isolators · CPC title

• H01P5/187

  Broadside coupled lines · CPC title