Optical device having mesas for light extraction enhancement

Patent metadata

Field	Value
Publication number	US-9941328-B2
Application number	US-201615248601-A
Country	US
Kind code	B2
Filing date	Aug 26, 2016
Priority date	Sep 3, 2012
Publication date	Apr 10, 2018
Grant date	Apr 10, 2018

Abstract

An optical device and method for fabricating an optical device. The optical device comprising: a semiconductor material comprising an active layer configured to emit light when an electrical current is applied to the device and/or to generate an electrical current when light is incident on the active layer, wherein the semiconductor material comprises a first surface and an opposed second surface, from which light is emitted from and/or received by the device, and wherein the first surface defines a first structure comprising the active layer and configured to reflect light emitted from the active layer toward the second surface and/or to reflect light received by the device toward the active layer, and the second surface defines a second structure configured to permit light incident on the second surface at an angle outside a critical angle range to the planar normal to pass therethrough.

First claim

What is claimed is:

1. An optical device comprising:
a semiconductor material comprising an active layer configured to emit light when an electrical current is applied to the device or to generate an electrical current when light is incident on the active layer,
wherein the semiconductor material comprises a first surface and an opposed second surface, at which light is emitted from or received by the device,
and wherein the first surface defines a first structure comprising the active layer and configured to reflect light emitted from the active layer toward the second surface or to reflect light received by the device toward the active layer, the second surface defines a second structure configured to permit light incident on the second surface at an angle outside a critical angle range to a planar normal to pass therethrough, the second structure includes a mesa with a truncated top, and the planar normal is defined in a direction normal to a surface defined by the truncated top of the second structure.

2. The optical device according to claim 1 , wherein the semiconductor material is an epitaxial layer of the device.

3. The optical device according to claim 1 , wherein the first structure comprises a mesa with a truncated top.

4. The optical device according to claim 3 , wherein the truncated tops of the mesas are substantially circular.

5. The optical device according to claim 3 , wherein the mesas have a circular footprint and the footprint of the mesa of the second structure has a larger diameter than the footprint of the mesa of the first structure.

6. The optical device according to claim 3 , wherein the truncated tops of the mesa of the second structure has a larger diameter than the truncated top of the mesa of the first structure.

7. The optical device according to claim 1 , wherein the first structure or the second structures is generally parabolic in cross section.

8. The optical device according to claim 1 , wherein the first and second structures are co-aligned.

9. The optical device according to claim 1 , wherein the second structure covers at least the lateral area covered by the first structure.

10. The optical device according to claim 1 , wherein the second surface defines a Fresnel lens.

11. The optical device according to claim 1 , further comprising a reflective layer deposited on the first surface to internally reflect light within the device.

12. The optical device according to claim 11 , wherein the reflective layer is electrically conducting and forms an electrical contact for the device.

13. The optical device according to claim 1 , wherein the optical device comprises one of a micro-LED and a photodiode.

14. An array of optical devices comprising a plurality of optical devices, each optical device comprising:
a semiconductor material comprising an active layer configured to emit light when an electrical current is applied to the device or to generate an electrical current when light is incident on the active layer;
wherein the semiconductor material comprises a first surface and an opposed second surface, at which light is emitted from or received by the device,
and wherein the first surface defines a first structure comprising the active layer and configured to reflect light emitted from the active layer toward the second surface or to reflect light received by the device toward the active layer, and the second surface defines a second structure configured to permit light incident on the second surface at an angle outside a critical angle range to a planar normal to pass therethrough, the second structure includes a mesa with a truncated top, and the planar normal is defined in a direction normal to a surface defined by the truncated top of the second structure.

15. The array of optical devices according to claim 14 , wherein the optical devices are formed from a single piece of semiconductor material positioned on a substrate.

16. The array of optical devices according to claim 14 , wherein a pitch between the optical devices in the array is at least the diameter of the truncated top of the mesa of the second structure.

17. A method of making an optical device, the method comprising:
providing a semiconductor material comprising an active layer configured to emit light when an electrical current is applied to the device or to generate an electrical current when light is incident on the active layer, wherein the semiconductor material comprises a first surface and an opposed second surface, from which light is emitted from or received by the device;
shaping the first surface to define a first structure comprising the active layer and configured to reflect light emitted from the active layer toward the second surface or to reflect light received by the device toward the active layer; and
shaping the second surface to define a second structure configured to permit light incident on the second surface at an angle outside a critical angle range to a planar normal to pass therethrough, the second structure including a mesa with a truncated top, and the planar normal being defined in a direction normal to a surface defined by the truncated top of the second structure.

18. The method according to claim 17 , wherein the semiconductor material is an epitaxial layer positioned on a substrate, and wherein the method further comprises a wafer lift-off procedure comprising removing the epitaxial layer from the substrate, such that the second surface is accessible.

19. The method according to claim 18 , wherein the wafer lift off procedure further comprises planarizing the first surface and forming a second substrate on the planarized first surface.

Assignees

• Oculus Vr Llc

Inventors

• Shepherd Nick

Classifications

• Y02E10/52

  PV systems with concentrators · CPC title

• H01L27/156 Primary

  Electricity · mapped topic

• H01L31/0547

  Electricity · mapped topic

• H01L33/24

  Electricity · mapped topic

• H01L33/60

  Electricity · mapped topic