Substrate planarizing method and dropping amount calculating method

Patent metadata

Field	Value
Publication number	US-9941137-B2
Application number	US-201514979399-A
Country	US
Kind code	B2
Filing date	Dec 27, 2015
Priority date	May 25, 2015
Publication date	Apr 10, 2018
Grant date	Apr 10, 2018

Abstract

According to one embodiment, a substrate planarizing method includes dropping from above a substrate with topography, resist whose amount is determined in accordance with the volume of a concave portion according to the topography. The distance between a blank template with a flat pressing plane and the substrate is set to a predetermined distance and then the resist is cured. After that, the blank template is released from the resist and the substrate is entirely etched. The amount of resist to be dropped on the substrate is adjusted for units of shot of the substrate.

First claim

What is claimed is:

1. A substrate planarizing method comprising:
dropping, from above a substrate with topography, resist whose amount is determined in accordance with a volume of a concave portion according to the topography of the substrate;
moving a blank template with a flat pressing plane or the substrate so that a distance between the blank template and the substrate becomes a predetermined distance, the pressing plane of the blank template having a size more than or equal to a region including a plurality of shots of the substrate;
pressing the pressing plane of the blank template against the resist, the pressing plane being pressed against the plurality of shots in one pressing process;
curing the resist;
releasing the blank template from the resist; and
etching the substrate entirely from above the resist, etching selectivity between the resist and a film to be etched on the substrate in the entire etching being 1.5 or less, wherein
an amount of resist to be dropped on the substrate is adjusted for each of the shots of the substrate, the amount of resist being calculated on the basis of the volume of the concave portion and a volume of upper side resist to be disposed above a convex and concave portion according to the topography, the volume of the upper side resist being calculated on the basis of an area of the pressing plane and a thickness of the upper side resist, and,
a position where the resist is dropped is set in accordance with a position of the convex and concave portion according to the topography, and
at least two kinds of resist dropping densities per unit area are set on the shot.

2. The substrate planarizing method according to claim 1 , wherein,
in the entire etching of the substrate,
the resist is etched back until a part of a surface of the substrate is exposed so that the resist is embedded in only the concave portion of the substrate, and
the resist is etched back further so that the resist is entirely removed.

3. A substrate planarizing method comprising:
dropping, from above a substrate with topography, resist whose amount is determined in accordance with volume of a concave portion according to the topography of the substrate,
moving a blank template with a flat pressing plane or the substrate so that a distance between the blank template and the substrate becomes a predetermined distance;
pressing the pressing plane of the blank template against the resist;
curing the resist;
releasing the blank template from the resist; and
etching the substrate entirely from above the resist, etching selectivity between the resist and a film to be etched on the substrate in the entire etching being 1.5 or less, wherein
the pressing plane of the blank template has a size more than or equal to a region including a plurality of shots of the substrate,
the pressing plane is pressed against the plurality of shots in one pressing process,
an amount of resist to be dropped on the substrate is calculated on the basis of the volume of the concave portion and a volume of upper side resist to be disposed above a convex and concave portion according to the topography, the volume of the upper side resist being calculated on the basis of an area of the pressing plane and a thickness of the upper side resist, and,
a position where the resist is dropped is set in accordance with a position of the convex and concave portion according to the topography, and
at least two kinds of resist dropping densities per unit area are set on the shot.

4. The substrate planarizing method according to claim 3 , wherein,
in the entire etching of the substrate,
the resist is etched back until a part of a surface of the substrate is exposed so that the resist is embedded in only the concave portion of the substrate, and
the resist is etched back further so that the resist is entirely removed.

Assignees

• Toshiba Memory Corp

Inventors

• Takahata Kazuhiro
• Soda Eiichi

Classifications

• H10P95/08

  Planarisation of organic insulating materials · CPC title

• H10P76/2041

  Photolithographic processes · CPC title

• H10P50/00

  Etching of wafers, substrates or parts of devices · CPC title

• H10P50/695 Primary

  characterised by the process involved to create the mask, e.g. lift-off masks or sidewalls or to modify the mask · CPC title

• G03F7/0002

  Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping · CPC title