Scanning ion beam deposition and etch
US-12176178-B2 · Dec 24, 2024 · US
US9941096B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9941096-B2 |
| Application number | US-201213609811-A |
| Country | US |
| Kind code | B2 |
| Filing date | Sep 11, 2012 |
| Priority date | Sep 12, 2011 |
| Publication date | Apr 10, 2018 |
| Grant date | Apr 10, 2018 |
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A method and system for forming a planar cross-section view for an electron microscope. The method comprises directing an ion beam from an ion source toward a first surface of a sample to mill at least a portion of the sample; milling the first surface, using the ion beam, to expose a second surface in which the end of the second surface distal to the ion source is milled to a greater depth relative to a reference depth than the end of the first surface proximal to the ion source; directing an electron beam from an electron source to the second surface; and forming an image of the second surface by detecting the interaction of the electron beam with the second surface. Embodiments also include planarzing the first surface of the sample prior to forming a cross-section.
Opening claim text (preview).
We claim as follows: 1. A method of forming a planar cross-section view for an electron microscope, the method comprising: directing an ion beam at a milling angle from an ion source toward a first surface of a sample to mill at least a portion of the sample, in which the milling angle between the ion beam and the first surface is equal to or less than ten degrees; milling the first surface, using the ion beam directed at the milling angle, to expose a second surface in which the end of the second surface distal to the ion source is milled to a greater depth relative to a reference depth than the end of the first surface proximal to the ion source, the second surface including at least one feature of interest; directing an electron beam from an electron source to the second surface; and forming an image of the second surface by detecting the interaction of the electron beam with the second surface, the image including at least a portion of the feature of interest; characterizing the feature of interest in a plurality of locations along the image of the second surface; and determining a depth of each of the plurality of locations based on the distance of the location from the end of the image proximal to the ion source and the milling angle between the ion beam and the first surface. 2. The method of claim 1 further comprising analyzing the image of the second surface to determine whether a feature of the second surface includes a defect. 3. The method of claim 1 in which the milling angle between the ion beam and the first surface is equal to or less than five degrees. 4. The method of claim 1 in which the milling angle between the ion beam and the first surface is equal to or less than one degree. 5. The method of claim 1 in which the ion beam comprises a focused ion beam. 6. The method of claim 1 in which the tilt of a sample stage, upon which the sample is mounted, is changed between the milling step and the image forming step. 7. The method of claim 1 in which a 45 degree stub is disposed between the sample stage and the sample. 8. The method of claim 1 in which milling the first surface using the ion beam to expose the second surface further comprises: milling the first surface at least in the local area of a feature of interest using the ion beam to make the first surface at least in the local area of the feature of interest substantially planar; subsequent to milling the first surface, milling the sample using the ion beam directed at the milling angle to expose a second surface, the second surface comprising a cross-section of the feature of interest.
Cutting or cleaving · CPC title
for preparing specimen to be viewed in microscopes or analyzed in microanalysers · CPC title
for evaporating or etching · CPC title
Observing the objects or the point of impact on the object · CPC title
involving mechanical work, e.g. chopping, disintegrating, compacting, homogenising (microtomes G01N1/06; pulverising in general B02C; mixing in general B01F) · CPC title
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