Switchable filters and design structures
US-9252733-B2 · Feb 2, 2016 · US
US9935600B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9935600-B2 |
| Application number | US-201514940815-A |
| Country | US |
| Kind code | B2 |
| Filing date | Nov 13, 2015 |
| Priority date | Jan 3, 2012 |
| Publication date | Apr 3, 2018 |
| Grant date | Apr 3, 2018 |
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Switchable and/or tunable filters, methods of manufacture and design structures are disclosed herein. The method of forming the filters includes forming at least one piezoelectric filter structure comprising a plurality of electrodes formed on a piezoelectric substrate. The method further includes forming a micro-electro-mechanical structure (MEMS) comprising a MEMS beam formed above the piezoelectric substrate and at a location in which, upon actuation, the MEMS beam shorts the piezoelectric filter structure by contacting at least one of the plurality of electrodes.
Opening claim text (preview).
What is claimed: 1. A method comprising: forming at least one filter comprising a plurality of electrodes on a piezoelectric substrate; and forming a beam structure positioned over the least one filter and structured to short the least one filter structure, upon actuation. 2. The method of claim 1 , wherein the beam structure is a MEMS cantilever beam, positioned perpendicular to the plurality of electrodes and, structure, upon activation, to contact the plurality of electrodes. 3. The method of claim 1 , wherein the beam structure is positioned over a ground electrode and a signal electrode of a Vin IDT. 4. The method of claim 1 , wherein the beam structure is positioned over ground electrodes of a Vin IDT and a Vout IDT of the at least one filter. 5. The method of claim 1 , wherein the beam structure is a MEMS beam formed above the piezoelectric substrate and at a location in which, upon actuation, the MEMS beam shorts the piezoelectric filter by contacting at least one of the plurality of electrodes. 6. The method of claim 1 , wherein the at least one filter is a piezoelectric structure. 7. The method of claim 6 , wherein the piezoelectric structure is a surface acoustic wave (SAW) filter. 8. The method of claim 7 , wherein forming the SAW filter comprises: forming a Vin interdigital transducer (IDT) comprising interleaved signal and ground electrodes on a surface of the piezoelectric substrate; and forming a Vout IDT comprising interleaved signal and ground electrodes on the surface of the piezoelectric substrate. 9. The method of claim 8 , wherein the beam structure is a MEMS beam which is positioned to short the interleaved signal and ground electrodes of the Vin IDT or Vout IDT, upon actuation. 10. The method of claim 1 , wherein the filter structure is a bulk acoustic wave (BAW) filter. 11. The method of claim 1 , wherein the beam structure is a composite MEMS beam structure of metal and insulator material over the plurality of electrodes. 12. The method of claim 1 , wherein beam structure is a cantilever MEMS beam, positioned between actuators and perpendicular to interleaved electrodes of the at least one filter.
the enclosure being defined by a cover cap mounted on an element forming part of the surface acoustic wave [SAW] device on the side of the IDT's · CPC title
for the manufacture of resonators or networks using surface acoustic waves · CPC title
consisting of a vertical arrangement (H03H9/0566 takes precedence) · CPC title
Programmable filters · CPC title
MEMS characterised by an electronic circuit specially adapted for controlling or driving the same (B81B7/0087 takes precedence; arrangements for starting, regulating, braking, or otherwise controlling an actuator H02N; control arrangements or circuits for visual indicators G09G3/00) · CPC title
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