Push-pull rf power amplifier circuit and push-pull rf power amplifier
US-2024429886-A1 · Dec 26, 2024 · US
US9935593B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9935593-B2 |
| Application number | US-201514867178-A |
| Country | US |
| Kind code | B2 |
| Filing date | Sep 28, 2015 |
| Priority date | Sep 29, 2014 |
| Publication date | Apr 3, 2018 |
| Grant date | Apr 3, 2018 |
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Power amplifier bias circuit. A power amplifier bias circuit can include an emitter follower device and an emitter follower mirror device coupled to form a mirror configuration. The emitter follower device can be configured to provide a bias signal for a power amplifier at an output port. The power amplifier bias circuit can include a reference device configured to mirror an amplifying device of the power amplifier. The emitter follower mirror device can be configured to provide a mirror bias signal to the reference device.
Opening claim text (preview).
What is claimed is: 1. A power amplifier bias circuit comprising: an emitter follower device and an emitter follower mirror device coupled to form a mirror configuration, the emitter follower device being configured to provide a bias signal for a power amplifier at an output port; a reference device configured to mirror an amplifying device of the power amplifier, the emitter follower mirror device being configured to provide a mirror bias signal to the reference device; an enable circuit coupled between an input port of the power amplifier bias circuit and the reference device; an output resistor coupled between the emitter follower device and the output port; and a reference-base resistor coupled between the emitter follower mirror device and the reference device. 2. The power amplifier bias circuit of claim 1 wherein the emitter follower device includes an emitter follower transistor, the emitter follower mirror device includes an emitter follower mirror transistor, and the emitter follower transistor and emitter follower mirror transistor are coupled by their respective bases to form the mirror configuration. 3. The power amplifier bias circuit of claim 1 wherein a current through the amplifying device is proportional to a current through the reference device. 4. The power amplifier bias circuit of claim 1 wherein the reference device includes a reference transistor configured to mirror an amplifying transistor of the amplifying device. 5. The power amplifier bias circuit of claim 4 wherein the emitter follower device is configured to provide the bias signal to a base of the amplifying transistor and the emitter follower mirror device is configured to provide the mirror bias signal to a base of the reference transistor. 6. The power amplifier bias circuit of claim 4 wherein a node between the emitter follower device and the emitter follower mirror device has a voltage of approximately twice a base-emitter voltage (2Vbe) of the amplifying transistor. 7. The power amplifier bias circuit of claim 6 further comprising a source follower device having an output coupled to the node. 8. The power amplifier bias circuit of claim 7 wherein the source follower device is configured as a zero shift buffer. 9. The power amplifier bias circuit of claim 7 wherein the source follower device includes a source follower field-effect transistor (FET). 10. The power amplifier bias circuit of claim 9 further comprising a second FET having a drain coupled to a source of the source follower FET. 11. The power amplifier bias circuit of claim 6 further comprising a capacitor coupled between the node and a ground potential. 12. The power amplifier bias circuit of claim 1 wherein the input port is configured to receive at least one of a reference voltage or a reference current.
Amplifiers in which input is applied to, or output is derived from, an impedance common to input and output circuits of the amplifying element, e.g. cathode follower · CPC title
the gated amplifier being switched on or off by putting into parallel or not, by choosing between amplifiers by (a ) switch(es) · CPC title
the amplifier being a radio frequency amplifier · CPC title
using a combination of several amplifiers (H03F3/60 takes precedence) · CPC title
Tuned amplifiers (H03F3/193, H03F3/195 take precedence) · CPC title
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