Magnetic tunnel junction element and manufacturing method therefor

Patent metadata

Field	Value
Publication number	US-9935262-B2
Application number	US-201515313998-A
Country	US
Kind code	B2
Filing date	Apr 29, 2015
Priority date	May 27, 2014
Publication date	Apr 3, 2018
Grant date	Apr 3, 2018

Abstract

A magnetic tunnel junction device and a manufacturing method therefor are provided. The magnetic tunnel junction device comprises: a seed layer having an FCC (001) crystal structure; a first ferromagnetic layer located on the seed layer and having perpendicular magnetic anisotropy; a tunneling barrier layer located on the first ferromagnetic layer; and a second ferromagnetic layer located on the tunneling barrier layer and having perpendicular magnetic anisotropy, wherein the first ferromagnetic layer has a BCC (001) crystal structure and does not have boron. Therefore, the magnetic tunnel junction device, which is structurally and thermally more stable, can be provided by using the seed layer configured to assist the crystal growth of a boron-free magnetic layer in a BCC (001) direction and provide perpendicular magnetic anisotropy thereto, that is, W 2 N or TaN which is a nitrogen-doped metal material having a cubic crystal structure and having a similar lattice constant to that of a magnetic layer material.

First claim

The invention claimed is:

1. A magnetic tunnel junction device, comprising:
a seed layer having an FCC (001) crystal structure;
a first ferromagnetic layer located on the seed layer and having perpendicular magnetic anisotropy;
a tunneling barrier layer located on the first ferromagnetic layer; and
a second ferromagnetic layer located on the tunneling barrier layer and having perpendicular magnetic anisotropy, wherein
the seed layer is W 2 N, and
the first ferromagnetic layer has CoFe having a BCC (001) crystal structure and does not have boron.

2. The magnetic tunnel junction device of claim 1 , further comprising a capping layer located on the second ferromagnetic layer.

3. The magnetic tunnel junction device of claim 2 , wherein the capping layer comprises a nitrogen doped metal.

4. A method of manufacturing a magnetic tunnel junction device, comprising:
forming a seed layer of W2N having an FCC (001) crystal structure on a substrate;
forming a first ferromagnetic layer of CoFe having perpendicular magnetic anisotropy on the seed layer;
forming a tunneling barrier layer on the first ferromagnetic layer; and
forming a second ferromagnetic layer having perpendicular magnetic anisotropy on the tunneling barrier layer, wherein
the first ferromagnetic layer is grown in a BCC (001) crystal structure.

5. The method of manufacturing a magnetic tunnel junction device of claim 4 , wherein the forming of the first ferromagnetic layer uses a sputtering method.

Assignees

• Univ Hanyang Ind Univ Coop Found

Inventors

• Hong Jinpyo
• Lee Jabin
• An Gwangguk

Classifications

• H01L43/12

  Electricity · mapped topic

• H01L43/10 Primary

  Electricity · mapped topic

• G11C11/161 Primary

  details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell · CPC title

• H01L43/08

  Electricity · mapped topic

• H10N50/85 Primary

  Materials of the active region · CPC title