Magnetic memory device and nonvolatile memory apparatus

Patent metadata

Field	Value
Publication number	US-9935260-B2
Application number	US-201615265080-A
Country	US
Kind code	B2
Filing date	Sep 14, 2016
Priority date	Mar 22, 2016
Publication date	Apr 3, 2018
Grant date	Apr 3, 2018

Abstract

According to one embodiment, a magnetic memory device includes a first magnetic layer, a second magnetic layer, a third magnetic layer, and a first non-magnetic layer. The third magnetic layer is provided between a first part of the first magnetic layer and the second magnetic layer. The first non-magnetic layer is provided between the second magnetic layer and the third magnetic layer. The first magnetic layer further includes a second part. At least a portion of the second part overlaps at least a portion of the third magnetic layer in a second direction orthogonal to a first direction from the first part toward the second magnetic layer.

First claim

What is claimed is:

1. A magnetic memory device, comprising:
a first magnetic layer including a first part and a second part;
a second magnetic layer;
a third magnetic layer provided between the first part and the second magnetic layer;
a first non-magnetic layer provided between the second magnetic layer and the third magnetic layer; and
a fourth magnetic layer,
at least a portion of the second part overlapping at least a portion of the third magnetic layer in a second direction orthogonal to a first direction from the first part toward the second magnetic layer,
wherein the second part of the first magnetic layer includes a first region and a second region,
at least a portion of the third magnetic layer is provided between the first region and the second region in the second direction,
a length of the first magnetic layer in a third direction is longer than a length of the first magnetic layer in the second direction, the third direction crosses a plane including the first direction and the second direction,
the first region and the second region extend in the third direction,
the fourth magnetic layer is separated from the second magnetic layer in the third direction,
the fourth magnetic layer is separated from the third magnetic layer in the first direction, and
magnetization of the second magnetic layer and magnetization of the fourth magnetic layer are variable.

2. The device according to claim 1 ,
wherein magnetization of the first magnetic layer and magnetization of the third magnetic layer are substantially fixed.

3. The device according to claim 1 ,
wherein a magnetization component of the first magnetic layer along the first direction is larger than a magnetization component of the first magnetic layer in the second direction, and
a magnetization component of the third magnetic layer along the first direction is larger than a magnetization component of the third magnetic layer in the second direction.

4. The device according to claim 1 ,
wherein the second part of the first magnetic layer does not overlap the second magnetic layer in the second direction.

5. The device according to claim 1 ,
wherein the second part is in contact with the third magnetic layer.

6. A magnetic memory device, comprising:
a first magnetic layer including a first part and a second part;
a second magnetic layer;
a third magnetic layer provided between the first part and the second magnetic layer;
a first non-magnetic layer provided between the second magnetic layer and the third magnetic layer; and
a fourth magnetic layer,
wherein the second part of the first magnetic layer includes a first region and a second region, and
at least a portion of the third magnetic layer is provided between the first region and the second region in a second direction orthogonal to a first direction from the first part toward the second magnetic layer,
a length of the first magnetic layer in a third direction is longer than a length of the first magnetic layer in the second direction, the third direction crosses a plane including the first direction and the second direction,
the first region and the second region extend in the third direction,
the fourth magnetic layer is separated from the second magnetic layer in the third direction,
the fourth magnetic layer is separated from the third magnetic layer in the first direction, and
magnetization of the second magnetic layer and magnetization of the fourth magnetic layer are variable.

7. A nonvolatile memory apparatus, comprising:
a magnetic memory device including
a first magnetic layer including a first part and a second part;
a second magnetic layer;
a third magnetic layer provided between the first part and the second magnetic layer;
a first non-magnetic layer provided between the second magnetic layer and the third magnetic layer; and
a fourth magnetic layer;

and
a control unit electrically connected with the magnetic memory device,
wherein the second part of the first magnetic layer includes a first region and a second region,
at least a portion of the third magnetic layer is provided between the first region and the second region in a second direction orthogonal to a first direction from the first part toward the second magnetic layer,
a length of the first magnetic layer in a third direction is longer than a length of the first magnetic layer in the second direction, the third direction crosses a plane including the first direction and the second direction,
the first region and the second region extend in the third direction,
the fourth magnetic layer is separated from the second magnetic layer in the third direction,
the fourth magnetic layer is separated from the third magnetic layer in the first direction, and
magnetization of the second magnetic layer and magnetization of the fourth magnetic layer are variable.

8. The apparatus according to claim 7 ,
wherein magnetization of the first magnetic layer and magnetization of the third magnetic layer are substantially fixed.

9. The apparatus according to claim 7 ,
wherein a magnetization component of the first magnetic layer along the first direction is larger than a magnetization component of the first magnetic layer in the second direction, and
a magnetization component of the third magnetic layer along the first direction is larger than a magnetization component of the third magnetic layer in the second direction.

10. The apparatus according to claim 7 ,
wherein the second part of the first magnetic layer does not overlap the second magnetic layer in the second direction.

11. The apparatus according to claim 7 ,
wherein the second part is in contact with the third magnetic layer.

Assignees

• Toshiba Kk

Inventors

• Saida Daisuke
• ITAI Shogo
• Kamata Chikayoshi

Classifications

• H01L43/10

  Electricity · mapped topic

• G11C11/1675

  Writing or programming circuits or methods · CPC title

• H01L43/02

  Electricity · mapped topic

• G11C11/1673

  Reading or sensing circuits or methods · CPC title

• H01L27/228

  Electricity · mapped topic