Production method for composite substrate

Patent metadata

Field	Value
Publication number	US-9935257-B2
Application number	US-201715449053-A
Country	US
Kind code	B2
Filing date	Mar 3, 2017
Priority date	Sep 15, 2015
Publication date	Apr 3, 2018
Grant date	Apr 3, 2018

Abstract

A production method for a composite substrate according to the present invention comprises
(a) a step of mirror-polishing a piezoelectric-substrate side of a laminated substrate formed by bonding a piezoelectric substrate and a support substrate; (b) a step of performing machining using an ion beam or a neutral atom beam so that a thickness of an outer peripheral portion of the piezoelectric substrate is larger than a thickness of an inner peripheral portion and a difference between a largest thickness and a smallest thickness of the inner peripheral portion of the piezoelectric substrate is 100 nm or less over an entire surface; and (c) a step of flattening the entire surface of the piezoelectric substrate to remove at least a part of an altered layer formed by the machining using the ion beam or the neutral atom beam in the step (b).

First claim

What is claimed is:

1. A production method for a composite substrate, comprising:
(a) a step of mirror-polishing a piezoelectric-substrate side of a laminated substrate, formed by bonding a piezoelectric substrate and a support substrate, and having a diameter of 2 inches or more, until a thickness of the piezoelectric substrate reaches 20 μm or less;
(b) a step of performing machining using an ion beam or a neutral atom beam so that a thickness of an outer peripheral portion of the piezoelectric substrate is larger than a thickness of an inner peripheral portion, and a difference between a largest thickness and a smallest thickness of the inner peripheral portion of the piezoelectric substrate is 100 nm or less; and
(c) a step of flattening the entire surface of the piezoelectric substrate to remove at least a part of an altered layer formed by the machining using the ion beam or the neutral atom beam in the step (b) by performing CMP using a polishing pad having a diameter of 5 mm or more and 30 mm or less and rotating and moving the polishing pad relative to the piezoelectric substrate while maintaining a constant pressing force of the polishing pad.

2. The production method for the composite substrate according to claim 1 , wherein, in the step (c), the polishing pad is moved relative to the piezoelectric substrate such that a retention time thereof in the outer peripheral portion is shorter than in the inner peripheral portion.

3. The production method for the composite substrate according to claim 1 , wherein, in the step (c), the polishing pad is moved relative to the piezoelectric substrate such that a retention time thereof decreases as the thickness of the piezoelectric substrate decreases.

4. The production method for the composite substrate according to claim 1 , wherein, in the step (c), the polishing pad is moved relative to the piezoelectric substrate such that a retention time thereof in the outer peripheral portion is shorter than in the inner peripheral portion and such that the retention time decreases as the thickness of the piezoelectric substrate decreases in the inner peripheral portion.

5. The production method for the composite substrate according to claim 1 , wherein, in the step (b), the machining using the ion beam or the neutral atom beam is performed so that an average value of the thickness of the outer peripheral portion of the piezoelectric substrate is larger by 10 to 50 nm than an average value of the thickness of the inner peripheral portion.

6. The production method for the composite substrate according to claim 1 , wherein, in the step (b), the machining using the ion beam or the neutral atom beam is performed so that the thickness of the piezoelectric substrate on an outermost periphery is larger by 20 nm or more than a thickness of a thinnest portion.

7. The production method for the composite substrate according to claim 1 , wherein, in the step (b), the machining using the ion beam or the neutral atom beam is performed so that the thickness of the piezoelectric substrate increases toward an outermost periphery within a range corresponding to 90% to 100% of an outer diameter of the piezoelectric substrate or in a range within 5 mm from the outermost periphery.

8. The production method for the composite substrate according to claim 7 , wherein, in the step (b), the machining using the ion beam or the neutral atom beam is performed so that an increase rate of the thickness in the range is 0.5 nm/mm or more and 10 nm/mm or less.

Assignees

• Ngk Insulators Ltd

Inventors

• Kitamura Kazumasa
• Nagae Tomoki

Classifications

• H10P52/402

  of semiconductor materials · CPC title

• H10W20/062

  by smoothing of conductive parts, e.g. by planarisation · CPC title

• H01L21/30625

  Electricity · mapped topic

• H01L21/7684

  Electricity · mapped topic

• B24B37/10 Primary

  for single side lapping · CPC title