Wafer processing bonding arrangement, wafer laminate, and thin wafer manufacturing method

Patent metadata

Field	Value
Publication number	US-9934996-B2
Application number	US-201615232175-A
Country	US
Kind code	B2
Filing date	Aug 9, 2016
Priority date	Aug 18, 2015
Publication date	Apr 3, 2018
Grant date	Apr 3, 2018

Abstract

A bonding arrangement comprising a silicone-base adhesive composition is suited for temporarily bonding a wafer to a support for wafer processing. The bonding arrangement includes a first temporary bond layer of non-silicone thermoplastic resin, and a second temporary bond layer of thermosetting silicone polymer and/or a third temporary bond layer of thermosetting siloxane-modified polymer. The second and/or third bond layer contains an antistatic agent.

First claim

The invention claimed is:

1. A wafer processing bonding arrangement for temporarily bonding a wafer to a support, comprising a silicone-base adhesive composition and an antistatic agent,
wherein the silicone-base adhesive composition comprises a first temporary bond layer (A) of non-silicone thermoplastic resin, and a second temporary bond layer (B) of thermosetting silicone polymer and/or a third temporary bond layer (C) of thermosetting siloxane-modified polymer, which is laid on the first temporary bond layer (A),
wherein the second temporary bond layer (B) and/or third temporary bond layer (C) contains the antistatic agent.

2. The bonding arrangement of claim 1 wherein the content of the antistatic agent is 0.01 to 10% by weight of the temporary bond layer which contains the antistatic agent.

3. A method for manufacturing a thin wafer, comprising the steps of:
temporarily bonding a wafer to a support using the bonding arrangement of claim 1 ,
processing the water to a reduced thickness, and
releasing the processed wafer from the support.

4. The bonding arrangement of claim 1 , comprising a first temporary bond layer (A) of non-silicone thermoplastic resin, and a second temporary bond layer (B) of thermosetting silicone polymer.

5. The bonding arrangement of claim 1 , comprising a first temporary bond layer (A) of non-silicone thermoplastic resin, and a third temporary bond layer (C) of thermosetting siloxane-modified polymer.

6. The bonding arrangement of claim 1 , comprising a first temporary bond layer (A) of non-silicone thermoplastic resin, a second temporary bond layer (B) of thermosetting silicone polymer, and a third temporary bond layer (C) of thermosetting siloxane-modified polymer.

7. The bonding arrangement of claim 1 wherein the antistatic agent is an anionic surfactant, cationic surfactant, nonionic surfactant, ampholytic surfactant, or electroconductive polymer.

8. A wafer laminate comprising a wafer and a support wherein the wafer is bonded to the support through a bonding arrangement comprising a silicone-base adhesive layer, the bonding arrangement containing an antistatic agent,
wherein the wafer has a circuit-forming front surface,
wherein the bonding arrangement comprises a first temporary bond layer (A) of non-silicone thermoplastic resin releasably bonded to the front surface of the wafer, and a second temporary bond layer (B) of thermosetting silicone polymer and/or a third temporary bond layer (C) of thermosetting siloxane-modified polymer, which is laid on the first temporary bond layer (A), and
the support is releasably laid on the second temporary bond layer (B) or third temporary bond layer (C), and
wherein the second temporary bond layer (B) and/or third temporary bond layer (C) contains the antistatic agent.

9. The wafer laminate of claim 8 wherein the bonding arrangement comprises a first temporary bond layer (A) of non-silicone thermoplastic resin, and a second temporary bond layer (B) of thermosetting silicone polymer.

10. The wafer laminate of claim 8 wherein the bonding arrangement comprises a first temporary bond layer (A) of non-silicone thermoplastic resin, and a third temporary bond layer (C) of thermosetting siloxane-modified polymer.

11. The wafer laminate of claim 8 wherein the bonding arrangement comprises a first temporary bond layer (A) of non-silicone thermoplastic resin, a second temporary bond layer (B) of thermosetting silicone polymer, and a third temporary bond layer (C) of thermosetting siloxane-modified polymer.

12. The wafer laminate of claim 8 wherein the antistatic agent is an anionic surfactant, cationic surfactant, nonionic surfactant, ampholytic surfactant, or electroconductive polymer.

Assignees

• Shinetsu Chemical Co

Inventors

• Sugo Michihiro
• Yasuda Hiroyuki
• Tagami Shohei
• Tanabe Masahito

Classifications

• H10P72/7442

  Separation by peeling · CPC title

• H10P72/7422

  used to protect an active side of a device or wafer · CPC title

• H10P72/7416

  used during dicing or grinding · CPC title

• H10P72/7412

  the auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support · CPC title

• H10P72/744

  Details of chemical or physical process used for separating the auxiliary support from a device or a wafer · CPC title