Techniques for processing substrates using directional reactive ion etching

Patent metadata

Field	Value
Publication number	US-9934981-B2
Application number	US-201414230649-A
Country	US
Kind code	B2
Filing date	Mar 31, 2014
Priority date	Sep 26, 2013
Publication date	Apr 3, 2018
Grant date	Apr 3, 2018

Abstract

A method of treating a substrate includes directing ions to the substrate along at least one non-zero angle with respect to a perpendicular to a substrate surface in a presence of a reactive ambient containing a reactive species where the substrate includes a surface feature. At least one surface of the surface feature is etched using the ions in combination with the reactive ambient at a first etch rate that is greater than a second etch rate when the ions are directed to the substrate without the reactive ambient and greater than a third etch rate when the reactive ambient is provided to the substrate without the ions.

First claim

What is claimed is:

1. A method of treating a substrate, comprising:
providing a top feature on a side of the substrate;
providing a first material over the top feature;
providing a reactive gas ambient in contact with the side of the substrate, an outer surface of the side of the substrate comprising the first material defining a first outer surface in first regions, and a second material disposed under the first material in the first regions, the second material defining a second outer surface in second regions of the side of the substrate;
directing a first dose of ions to the substrate in a presence of the reactive gas ambient at an incidence angle the incidence angle forming a non-zero angle with respect to a perpendicular to the side of the substrate, the ions configured to etch an angled feature into the second material along a direction parallel to the incidence angle of the ions, wherein the angled feature contacts a buried feature, and wherein the buried feature is disposed under the top feature.

2. The method of claim 1 , the first material comprising a mask material and the second material comprising an interlevel dielectric.

3. The method of claim 2 wherein the buried feature is disposed at a bottom surface of the interlevel dielectric.

4. The method of claim 2 , wherein the angled feature is a contact via, wherein the contact via is arranged to expose the buried feature.

5. The method of claim 1 , wherein the angled feature is an angled via or an angled trench.

6. The method of claim 1 , wherein the buried feature is a buried conductor.

7. A method of treating a substrate, comprising:
directing ions to the substrate along at least one non-zero angle with respect to a perpendicular to a substrate surface in a presence of a reactive ambient containing a reactive species, the substrate including a surface feature; and
etching, using the ions in combination with the reactive ambient, at least one surface of the surface feature, wherein the surface feature comprises:
three or more layers, wherein a top layer comprises a first material having a top surface, a second layer adjacent the top layer comprises a second material, and a third layer adjacent the second layer comprises a material different than the second material;
a pair of opposed sidewalls oriented along a first direction; and
a pair of covered portions comprising a fourth material disposed on the opposing sidewalls and top surface and defining an exposed portion of the patterned feature therebetween wherein the directing ions comprises directing ions to at least one sidewall of the pair of opposed sidewalls at the non-zero angle, wherein the directing the ions comprises etching the second layer at a first etch rate and etching the top layer and third layer at etch rates that are less than the first etch rate, wherein a tunnel is formed in the second layer.

8. The method of claim 7 wherein the top layer forms a channel of a gate-all-around transistor after the etching.

Assignees

• Varian Semiconductor Equipment Ass Inc

Inventors

• Sherman Steven R
• Ruffell Simon
• Hautala John
• Brand Adam

Classifications

• H10P50/242 Primary

  of Group IV materials · CPC title

• H01L29/66803

  Electricity · mapped topic

• H01L21/3065 Primary

  Electricity · mapped topic

• H01J37/32357

  Generation remote from the workpiece, e.g. down-stream · CPC title

• H01J37/32422

  Arrangement for selecting ions or species in the plasma · CPC title