Method for obtaining patterns in a layer

Patent metadata

Field	Value
Publication number	US-9934973-B2
Application number	US-201515538564-A
Country	US
Kind code	B2
Filing date	Dec 22, 2015
Priority date	Dec 22, 2014
Publication date	Apr 3, 2018
Grant date	Apr 3, 2018

Abstract

The invention relates in particular to a method for producing subsequent patterns in an underlying layer ( 120 ), the method comprising at least one step of producing prior patterns in a carbon imprintable layer ( 110 ) on top of the underlying layer ( 120 ), the production of the prior patterns involving nanoimprinting of the imprintable layer ( 110 ) and leave in place a continuous layer formed by the imprintable layer ( 110 ) and covering the underlying layer ( 120 ), characterized in that it comprises the following step:
at least one step of modifying the underlying layer ( 120 ) via ion implantation ( 421 ) in the underlying layer ( 120 ), the implantation ( 421 ) being carried out through the imprintable layer ( 110 ) comprising the subsequent patterns, the parameters of the implantation ( 421 ) being chosen in such a way as to form, in the underlying layer ( 120 ), implanted zones ( 122 ) and non-implanted zones, the non-Implanted zones defining the subsequent patterns and having a geometry that is dependent on the prior patterns.

First claim

The invention claimed is:

1. A method for producing subsequent patterns in an underlying layer, the method comprising producing prior patterns in a carbon imprintable layer on top of the underlying layer, wherein the production of the prior patterns comprises nanoimprinting of the imprintable layer and leaves in place, at the bottom of the patterns, residual thicknesses of an imprintable layer, the imprintable layer thus forming a continuous layer covering the underlying layer, comprising:
modifying the underlying layer via ion implantation in the underlying layer, the implantation being carried out through the imprintable layer comprising the prior patterns and said residual thicknesses, the parameters of the implantation comprise an implantation direction and wherein the implantation direction is perpendicular to a main plane in which the underlying layer extends, the parameters of the implantation being chosen in such a way as to form, in the underlying layer, zones modified by the implantation and non-implanted zones, the non-implanted zones defining the subsequent patterns and having a geometry that is dependent on the prior patterns,
wherein the residual thickness at the bottom of the patterns is sufficient for forming a barrier that prevents, during said implantation, carbon coming from the carbon imprintable layer from penetrating into the underlying layer;
and comprising, after the modification, removing the modified zones carried out selectively with respect to the non-modified zones, in such a way as to leave in place the non-modified zones.

2. The method of claim 1 , wherein the residual thickness at the bottom of the patterns is greater than or equal to 20 nanometers.

3. The method of claim 1 , wherein the residual thickness at the bottom of the patterns is greater than or equal to 30 nanometers.

4. The method of claim 1 , wherein the materials of the imprintable layer and of the underlying layer, as well as the parameters of the implantation, including the nature of the ions, are chosen in such ways that the materials of the imprintable layer and of the underlying layer have identical capacities of penetration of the ions.

5. The method of claim 4 , wherein the parameters of the implantation are chosen in such a way that the subsequent patterns have a geometry identical to that of the prior patterns.

6. The method of claim 1 , wherein the removal comprises etching the modified zones selectively with respect to the non-modified zones, the etching being etching via a wet process or a dry process.

7. The method of claim 1 , wherein the producing prior patterns is carried out in such a way that for each of the patterns, the residual thickness of the imprintable layer is greater than the minimum depth of implantation of the ions, the minimum depth being taken in the direction of implantation and starting from the surface of the imprintable layer.

8. The method of claim 1 , wherein the producing prior patterns is carried out in such a way that for each of the patterns, the residual thickness of the imprintable layer is less than the minimum depth of implantation of the ions, the minimum depth being taken in the direction of implantation and starting from the surface of the imprintable layer.

9. The method of claim 1 , comprising, between the producing the prior patterns and the implantation depositing a protective layer covering the prior patterns.

10. The method of claim 9 , wherein the protective layer is a layer of carbon deposited via a plasma.

11. The method of claim 1 , wherein the ions are selected from the group consisting of: hydrogen (H2), helium (He), argon (Ar) and nitrogen (N2).

12. The method of claim 1 , wherein the underlying layer is a layer or a substrate, comprising a material selected from the group consisting of: silicon, silicon germanium, germanium, and quartz.

13. The method of claim 1 , wherein the underlying layer is a layer or a substrate, comprising SiOCH.

14. The method of claim 13 , wherein during the implantation, there is a buffer layer on top of the underlying layer made of SiOCH, located between the imprintable layer and the underlying layer.

15. The method of claim 14 , wherein the buffer layer comprises SixNy or SixOy.

16. The method of claim 14 , wherein during the implantation, the buffer layer has a thickness greater than or equal to 10 nm.

17. The method of claim 1 , wherein the underlying layer forms the active layer of a photovoltaic cell.

18. The method of claim 1 , wherein the underlying layer is a substrate comprising sapphire and forms, together with the subsequent patterns, a patterned sapphire substrate.

19. A method for manufacturing a light-emitting diode comprising a patterned sapphire substrate, wherein the patterned sapphire substrate is obtained by the method of claim 18 .

Assignees

• Commissariat Energie Atomique

Inventors

• Landis Stefan
• Posseme Nicolas
• Barnola Sebastien
• David Thibaut
• Nouri Lamia

Classifications

• H10P50/695

  characterised by the process involved to create the mask, e.g. lift-off masks or sidewalls or to modify the mask · CPC title

• H10P50/644

  Anisotropic liquid etching (H10P50/61 takes precedence) · CPC title

• H10P50/642

  Chemical etching · CPC title

• H10P50/283

  by chemical means · CPC title

• H10P50/242

  of Group IV materials · CPC title