Sputtering target and production method of the same

Patent metadata

Field	Value
Publication number	US-9934949-B2
Application number	US-201414784375-A
Country	US
Kind code	B2
Filing date	Apr 10, 2014
Priority date	Apr 15, 2013
Publication date	Apr 3, 2018
Grant date	Apr 3, 2018

Abstract

A sputtering target consists of a sintered body having a component composition consisting of: Ga of 10 to 40 at. % and Na of 0.1 to 15 at. % as metal elements; and the balance being Cu and inevitable impurities. The sintered body contains the Na in a form of Na compounds consisting of at least one compound selected from the group consisting of sodium sulfate, sodium sulfite, sodium selenate, and sodium selenite, the sintered body has a composition in which a Na compound phase is dispersed, and an average grain size of the Na compound phase is 10 μm or less.

First claim

What is claimed is:

1. A sputtering target having a sintered body having a component composition consisting of:
Ga, Na compounds, Cu, and inevitable impurities,
wherein the Ga is in the range of 10 to 40 at. %,
Na of the Na compounds is in the range of 0.1 to 15 at. %, and
the balance is Cu and inevitable impurities,
wherein the Na compounds include at least one compound selected from the group consisting of sodium sulfate, sodium sulfite, sodium selenate, and sodium selenite, and
wherein the sintered body has a composition in which a Na compound phase is dispersed,
wherein an average grain size of the Na compound phase is 10.0 μm or less, and
wherein, in the sintered body, the average number of aggregates of the Na compounds having the size of 0.05 mm 2 or more within an area of 1 cm 2 of a surface of the sputtering target is one or less.

2. The sputtering target according to claim 1 , wherein
the sintered body has a theoretical density ratio of 90% or more,
a deflective strength of 100 N/mm 2 or more, and
a bulk resistivity of 1 mΩ·cm or less.

3. The sputtering target according to claim 1 , wherein
a metallic phase in the sintered body has an average crystal grain size of 20 μm or less.

4. A production method of the sputtering target according to claim 1 comprising the steps of:
preparing a mixed powder in which a Na compound powder and a Cu—Ga powder are mixed, the Na compound powder consisting of at least one compound selected from the group consisting of sodium sulfate, sodium sulfite, sodium selenate, and sodium selenite; and
producing a sintered body by sintering the mixed powder,
wherein the Cu—Ga powder consists of a Cu—Ga alloy powder or consists of a Cu—Ga alloy powder and a Cu powder,
the average particle size thereof is 1 to 45 μm, and
the particle having the particle size of 30 μm or less is account for 50 wt. % or more compared to the total powder weight of the Cu—Ga powder.

5. The production method according to claim 4 further comprising the step of:
drying the Na compound powder at a temperature of 70° C. or more before the step of preparing the mixed powder.

6. The production method according to claim 4 further comprising the step of:
drying the mixed powder at a temperature of 70° C. or more after the step of preparing the mixed powder.

7. The production method according to claim 4 , wherein the step of sintering the mixed powder performs sintering of the mixed powder in a non-oxidizing atmosphere or vacuum.

Assignees

• Mitsubishi Materials Corp

Inventors

• Zhang Shoubin
• Umemoto Keita
• Shoji Masahiro

Classifications

• H01J2237/3321

  CVD [Chemical Vapor Deposition] · CPC title

• C23C14/0623

  Sulfides, selenides or tellurides · CPC title

• C23C14/3414

  Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy · CPC title

• B22F3/10

  Sintering only · CPC title

• C22C28/00

  Alloys based on a metal not provided for in groups C22C5/00 - C22C27/00 · CPC title