Source mask optimization to reduce stochastic effects

Patent metadata

Field	Value
Publication number	US-9934346-B2
Application number	US-201514968561-A
Country	US
Kind code	B2
Filing date	Dec 14, 2015
Priority date	Jan 10, 2012
Publication date	Apr 3, 2018
Grant date	Apr 3, 2018

Abstract

Disclosed herein is a computer-implemented method for improving a lithographic process for imaging a portion of a design layout onto a substrate using a lithographic projection apparatus, the method comprising defining a multi-variable cost function, the multi-variable cost function being a function of a stochastic effect of the lithographic process.

First claim

What is claimed is:

1. A method of improving a lithographic process for imaging a portion of a design layout onto a substrate using a lithographic projection apparatus, the method comprising:
defining a multi-variable cost function, the multi-variable cost function being a function of a stochastic effect of the lithographic process, the stochastic effect being a function of a plurality of design variables that are characteristics of the lithographic process; and
reconfiguring, by a hardware computer, one or more of the characteristics of the lithographic process by adjusting one or more of the design variables and evaluating the cost function with the adjusted one or more design variables until a certain termination condition of the cost function is satisfied, wherein the adjusted one or more variables are used to design, control and/or modify an aspect of the lithographic process and/or the lithographic projection apparatus.

2. The method of claim 1 , wherein the stochastic effect comprises line width roughness (LWR), a throughput of the lithographic projection apparatus and/or local CD variation.

3. The method of claim 1 , wherein the stochastic effect is simulated using a model of the stochastic effect.

4. The method of claim 3 , wherein the model of the stochastic effect combines line width roughness (LWR) with critical dimension uniformity (CDU).

5. The method of claim 1 , wherein the stochastic effect is caused by photon shot noise, photon-generated secondary electrons, photon-generated acid in a resist of the substrate, distribution of photon-activatable or electron-activatable particles in a resist of the substrate, density of photon-activatable or electron-activatable particles in a resist of the substrate, or a combination thereof.

6. The method of claim 1 , wherein the cost function is evaluated using the portion of the design layout and the portion of the design layout comprises one or more selected from the following: an entire design layout, a clip, a section of a design layout that is known to have one or more critical features, a section of the design layout where a hot spot or a warm spot has been identified, and/or a section of the design layout where one or more critical features have been identified.

7. The method of claim 1 , wherein the termination condition includes one or more selected from the following: minimization of the cost function; maximization of the cost function; reaching a certain number of iterations; reaching a value of the cost function equal to or beyond a certain threshold value; reaching a certain computation time; reaching a value of the cost function within an acceptable error limit; and/or minimizing an exposure time in the lithographic process.

8. The method of claim 1 , wherein one or more of the design variables comprise a characteristic of an illumination source for the lithographic projection apparatus, and/or one or more of the design variables comprise a characteristic of the design layout, and/or one or more of the design variables comprise a characteristic of projection optics of the lithographic projection apparatus, and/or one or more of the design variables comprise a characteristic of a resist of the substrate.

9. The method of claim 1 , wherein the reconfiguration comprises constraints dictating a range of at least some of the design variables.

10. The method of claim 9 , wherein at least some of the design variables are under constraints representing physical restrictions in a hardware implementation of the lithographic projection apparatus.

11. The method of claim 10 , wherein the constraints include one or more selected from: a tuning range, a rule governing patterning device manufacturability, and/or interdependence between the design variables.

12. The method of claim 9 , wherein the constraints include, or are determined by, a desired substrate throughput of the lithographic projection apparatus.

13. The method of claim 1 , wherein the cost function is a function of one or more of the following: edge placement error, critical dimension, resist contour distance, worst defect size, and/or best focus shift.

14. The method of claim 1 , wherein the cost function comprises characteristics of a resist image or an aerial image.

15. The method of claim 1 , wherein the cost function is minimized by solving a quadratic programming problem.

16. The method of claim 1 , wherein the cost function is a function of only the design variables that are characteristics of a projection optics of the lithographic projection apparatus, while other design variables are assigned values.

17. The method of claim 1 , wherein the cost function represents a probability of finding a hot spot in the portion of the design layout.

18. The method of claim 1 , wherein the multi-variable cost function is a function of an edge placement error, a throughput of the lithographic projection apparatus, and a stochastic effect of the lithographic process.

19. The method of claim 1 , wherein at least one of the design variables represents an adjustment to a wavefront manipulator of the lithographic projection apparatus.

20. The method of claim 1 , wherein the plurality of design variables includes at least a parameter of the design layout.

21. The method of claim 1 , further comprising generating an output file to be stored in the computer, the output file comprising adjusted values of the one or more design variables at the termination condition.

22. The method of claim 1 , wherein the values of the adjusted one or more design variables result in an expanded lithography process window.

23. The method of claim 1 , wherein the lithographic process uses extreme ultra-violet (EUV) wavelength.

24. The method of claim 1 , comprising determining a stochastic effect function of the lithographic process that produces as an output a value of a stochastic effect as a function of the plurality of design variables that are inputs to the function and which cause quantifiable changes in the stochastic effect value, wherein the plurality of design variables include at least an adjustable parameter of projection optics of the lithographic projection apparatus.

25. A method of increasing a substrate throughput of a lithographic process for imaging a portion of a design layout onto a substrate using a lithographic projection apparatus, the method comprising:
defining a multi-variable cost function, the multi-variable cost function being a function of a stochastic effect of the lithographic process, and being a function of an exposure time of the substrate in the lithographic projection apparatus, the stochastic effect being a function of a plurality of design variables that are characteristics of the lithographic process; and
reconfiguring, by a hardware computer, one or more of the characteristics of the lithographic process by adjusting one or more of the design variables and evaluating the cost function with the adjusted one or more design variables until a certain termination condition of the cost function is satisfied, wherein the adjusted one or more variables are used to design, control and/or modify an aspect of the lithographic process and/or the lithographic projection apparatus.

26. The method of claim 25 , wherein the termination condition is that the exposure time is minimized.

27. The method of claim 25 , further comprising generating an output file to be stored in the comput

Assignees

• Asml Netherlands Bv

Inventors

• Hansen Steven George

Classifications

• G03F1/70 Primary

  Adapting basic layout or design of masks to lithographic process requirements, e.g., second iteration correction of mask patterns for imaging · CPC title

• G06F30/00

  Computer-aided design [CAD] · CPC title

• G03F7/70433

  Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors · CPC title

• G03F7/70441

  Optical proximity correction [OPC] · CPC title

• G03F7/70125 Primary

  Use of illumination settings tailored to particular mask patterns (details of setting means G03F7/70091) · CPC title