Semiconductor wafers recrystallized in a partially surrounding thin film capsule

Patent metadata

Field	Value
Publication number	US-9932689-B2
Application number	US-201414155546-A
Country	US
Kind code	B2
Filing date	Jan 15, 2014
Priority date	Jun 26, 2007
Publication date	Apr 3, 2018
Grant date	Apr 3, 2018

Abstract

An original wafer, typically silicon, has the form of a desired end PV wafer. The original may be made by rapid solidification or CVD. It has small grains. It is encapsulated in a clean thin film, which contains and protects the silicon when recrystallized to create a larger grain structure. The capsule can be made by heating a wafer in the presence of oxygen, or steam, resulting in silicon dioxide on the outer surface, typically 1-2 microns. At least one support element supports the wafer at the time the capsule is provided and blocks only minimal surface area from contact with the film forming atmosphere. There may be a plurality of support elements, or a surface may provide such support. The capsule contains the molten material during recrystallization, and protects against impurities. Recrystallization may be in air. After recrystallization, the capsule is removed.

First claim

What is claimed is:

1. A method for making a semiconductor wafer, comprising the steps of:
a. providing an original free standing semiconductor wafer having a first grain structure, having a thickness of greater than 50 microns and a first average grain size;
b. supporting the wafer with at least one support element;
c. providing a thin film capsule over all of the surface of the wafer except any portion that is blocked by the at least one support element, to form a partially encapsulated wafer; and
d. heating and cooling the partially encapsulated wafer under conditions such that the original wafer becomes molten and then recrystallizes with a second grain structure of second average grain size, which is larger than the first average grain size, and such that the thin film capsule remains substantially intact.

2. The method of claim 1 , further wherein the step of heating and cooling is conducted in air.

3. The method of claim 1 , the at least one support element comprising a plurality of support elements.

4. The method of claim 1 , the at least one support element comprising a surface.

5. The method of claim 1 , the thin film capsule preventing contamination of the recrystallized wafer by elements in the environment in which recrystallization occurs.

6. The method of claim 1 , the step of providing the thin film capsule comprising providing an oxide film.

7. The method of claim 1 , further comprising, the step of heating the original wafer in an environment containing oxygen so that an oxide layer forms, conducted at a time immediately before the step of heating the encapsulated wafer under conditions such that the original wafer recrystallizes, and within the same heating environment.

8. The method of claim 1 , further comprising, the step of heating the original wafer in an environment containing oxygen so that a thin oxide layer forms, conducted at a time significantly before the step of heating the encapsulated wafer and under different conditions from those under which the original wafer recrystallizes.

9. The method of claim 1 , the step of cooling comprising, establishing within the heated wafer, a freeze interface between a zone of liquid and a zone of recrystallized semiconductor, which freeze interface is concave toward the liquid zone, asymmetric with respect to the heated wafer mid-plane and which meets the film at an interface angle of greater than 90 degrees toward the liquid zone at a first location and less than or equal to 90 degrees toward the liquid zone at a second location.

10. The method of claim 1 , the step of heating and cooling comprising providing an asymmetric cooling environment with respect to the mid-plane of the heated wafer.

11. The method of claim 1 , the thin film capsule having a thickness of between about 0.25 microns and 5 microns.

12. The method of claim 1 , the step of providing a thin film capsule comprising providing a plurality of nested films which, together, surround substantially the entire surface of the original wafer.

13. The method of claim 1 , the step of providing a thin film capsule comprising providing a plurality of nested thin films at least one of the plurality of nested thin films surrounding less than the entire surface of the original wafer.

Assignees

• Massachusetts Inst Technology

Inventors

• Sachs Emanuel M
• Serdy James G
• Hantsoo Eerik T

Classifications

• H10P14/3802

  Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth · CPC title

• H10P14/3411

  Silicon, silicon germanium or germanium · CPC title

• H10W74/137

  the encapsulations being directly on the semiconductor body (H10W74/134 takes precedence) · CPC title

• H10P95/90 Primary

  Thermal treatments, e.g. annealing or sintering · CPC title

• H01L2924/00

  Electricity · mapped topic