Method for producing group III nitride semiconductor single crystal

Patent metadata

Field	Value
Publication number	US-9932688-B2
Application number	US-201615239584-A
Country	US
Kind code	B2
Filing date	Aug 17, 2016
Priority date	Aug 26, 2015
Publication date	Apr 3, 2018
Grant date	Apr 3, 2018

Abstract

The present techniques provide a method for producing a Group III nitride semiconductor single crystal that is designed to grow a semiconductor single crystal with high reproducibility. The method for producing a Group III nitride semiconductor single crystal comprises adding a seed crystal substrate, Ga, and Na into a crucible, and growing a Group III nitride semiconductor single crystal. In the growth of the Group III nitride semiconductor single crystal, a measuring device is used to detect the reaction of Ga with Na. Ga is reacted with Na with the temperature of the crucible adjusted within a first temperature range of 80° C. to 200° C. After the measuring device detected the reaction of Ga with Na, the temperature of the crucible is elevated up to a growth temperature of the Group III nitride semiconductor single crystal.

First claim

What is claimed is:

1. A method for producing a Group III nitride semiconductor single crystal, the method comprising:
adding a seed-crystal substrate, Ga, and Na into a crucible and growing a Group III nitride semiconductor single crystal,
wherein in the growing of the Group III nitride semiconductor single crystal at a predetermined growth temperature:
Ga is reacted with Na with the temperature of the crucible adjusted within a first temperature range lower than 500° C.; and
the temperature of the crucible is elevated up to the growth temperature of the Group III nitride semiconductor single crystal after the reaction of Ga with Na, and

wherein the reaction of Ga with Na is detected by a measuring device for detecting the reaction of Ga with Na.

2. The method for producing a Group III nitride semiconductor single crystal according to claim 1 , wherein the reaction of Ga with Na is a state of a dispersion of fine particles of Ga—Na alloy.

3. The method for producing a Group III nitride semiconductor single crystal according to claim 1 , wherein the first temperature range is 80° C. to 400° C.

4. The method for producing a Group III nitride semiconductor single crystal according to claim 2 , wherein the first temperature range is 80° C. to 400° C.

5. The method for producing a Group III nitride semiconductor single crystal according to claim 1 , wherein the first temperature range is 80° C. to 200° C.

6. The method for producing a Group III nitride semiconductor single crystal according to claim 2 , wherein the first temperature range is 80° C. to 200° C.

7. The method for producing a Group III nitride semiconductor single crystal according to claim 1 , wherein the measuring device is a X-ray observation device which observes the inside of the crucible by transmitting X-ray to the crucible, and detects the reaction of Ga with Na by receiving the X-ray transmitted through the crucible.

8. The method for producing a Group III nitride semiconductor single crystal according to claim 1 , wherein the measuring device has a temperature measuring unit which measures the inside temperature of the crucible, and detects the reaction of Ga with Na in differential thermal analysis.

9. A method for producing a Group III nitride semiconductor single crystal, the method comprising:
adding a seed-crystal substrate, Ga, and Na into a crucible and growing a Group III nitride semiconductor single crystal,
wherein in the growing of the Group III nitride semiconductor single crystal at a predetermined growth temperature:
Ga is reacted with Na with the temperature of the crucible adjusted within a first temperature range of not lower than 80° C. and lower than 200° C.; and
the temperature of the crucible is elevated up to the growth temperature of the Group III nitride semiconductor single crystal after the reaction of Ga with Na, and

wherein in a process for rising the temperature of the crucible from a room temperature to a growth temperature before a process of the growing of the Group III nitride semiconductor single crystal, a temperature rise profile of the crucible is adjusted so as to fall within the first temperature range for at least 30 minutes.

10. A method for producing a Group III nitride semiconductor single crystal, the method comprising:
adding a seed-crystal substrate, Ga, and Na into a crucible and growing a Group III nitride semiconductor single crystal,
wherein in the growing of the Group III nitride semiconductor single crystal at a predetermined growth temperature:
Ga is reacted with Na with the temperature of the crucible adjusted within a first temperature range lower than 500° C.; and
the temperature of the crucible is elevated up to the growth temperature of the Group III nitride semiconductor single crystal after the reaction of Ga with Na, and

wherein the temperature rise rate at which the temperature of the crucible is elevated from a room temperature to a temperature when the reaction of Ga and Na is completed is lower than the temperature rise rate at which the temperature of the crucible is elevated up to the growth temperature after the reaction.

11. The method for producing a Group III nitride semiconductor single crystal according to claims 10 , wherein the reaction of Ga with Na is a state of a dispersion of fine particles of Ga—Na alloy.

12. The method for producing a Group III nitride semiconductor single crystal according to claims 10 , wherein the first temperature range is 80° C. to 200° C.

13. The method for producing a Group III nitride semiconductor single crystal according to claim 9 , wherein the reaction of Ga with Na is a state of a dispersion of fine particles of Ga—Na alloy.

14. The method for producing a Group III nitride semiconductor single crystal according to claim 7 , wherein the reaction of Ga with Na is a state of a dispersion of fine particles of Ga—Na alloy.

15. The method for producing a Group III nitride semiconductor single crystal according to claim 8 , wherein the reaction of Ga with Na is a state of a dispersion of fine particles of Ga—Na alloy.

16. The method for producing a Group III nitride semiconductor single crystal according to claim 12 , wherein the reaction of Ga with Na is a state of a dispersion of fine particles of Ga—Na alloy.

Assignees

• Toyoda Gosei Kk

Inventors

• Moriyama Miki

Classifications

• H10P14/3416

  Nitrides · CPC title

• H10P14/3216

  Nitrides · CPC title

• H10P14/2921

  being crystalline insulating materials · CPC title

• H10P74/23

  characterised by multiple measurements, corrections, marking or sorting processes · CPC title

• C30B29/406

  Gallium nitride · CPC title