Surface emitting laser and image forming apparatus

Patent metadata

Field	Value
Publication number	US-9929538-B2
Application number	US-201213608061-A
Country	US
Kind code	B2
Filing date	Sep 10, 2012
Priority date	Sep 28, 2011
Publication date	Mar 27, 2018
Grant date	Mar 27, 2018

Abstract

A first stepped structure configured to apply a reflectance difference and a second stepped structure configured to change a far field light intensity distribution are provided. A region in which a level difference of the first stepped structure is formed has a predetermined relationship with a region in which a level difference of the second stepped structure is formed.

First claim

What is claimed is:

1. A surface emitting laser including a laminated structure including a substrate, and a lower mirror, an active layer, and an upper mirror formed on the substrate configured to oscillate at a wavelength λ, the surface emitting laser comprising:
a first stepped structure provided in a light outgoing region on an upper part of the upper mirror and including a level difference formed between a first region arranged in a center portion of the light outgoing region and a second region provided outside the first region; and
a second stepped structure provided in the light outgoing region on the upper part of the upper mirror and including a level difference formed between a third region provided outside the first region and a fourth region provided outside the third region,
wherein the level difference of the second stepped structure exists in the second region;
reflectance of a structure including the upper mirror, the first stepped structure, and the second stepped structure in the first region is higher than that in the second region with respect to light perpendicularly made incident to the substrate and having a wavelength λ; and
a phase difference between transmitted light of the third region and transmitted light of the fourth region is greater than a phase difference between transmitted light of the first region and transmitted light of the third region and wherein phase difference between transmitted light of the third region and transmitted light of the fourth region is π.

2. The surface emitting laser according to claim 1 , wherein an absolute value of a value obtained by subtracting an actual thickness difference between the third region and the fourth region concerning the second stepped structure from a light path length difference therebetween is greater than an absolute value of a value obtained by subtracting an actual thickness difference between the first region and the third region concerning the first stepped structure from a light path length difference therebetween.

3. The surface emitting laser according to claim 1 , wherein the first stepped structure includes a first material through which at least a part of light having a wavelength λ is transmitted, and
wherein the second stepped structure includes a second material through which at least a part of the light having the wavelength λ is transmitted.

4. The surface emitting laser according to claim 3 , wherein the first material has a refractive index different from that of the second material.

5. The surface emitting laser according to claim 3 , wherein the first material is a semiconductor, and
wherein the second material is a dielectric material.

6. The surface emitting laser according to claim 3 , wherein the first material is a dielectric material, and
wherein the second material is a semiconductor.

7. The surface emitting laser according to claim 5 , wherein the semiconductor includes AlGaAs.

8. The surface emitting laser according to claim 5 , wherein the dielectric material includes silicon oxide or silicon nitride.

9. The surface emitting laser according to claim 1 , wherein a difference between an optical thickness of the first region and an optical thickness of the second region is an odd multiple of λ/4 in the first stepped structure.

10. The surface emitting laser according to claim 9 , wherein the difference between the optical thickness of the first region and the optical thickness of the second region is λ/4 in the first stepped structure.

11. The surface emitting laser according to claim 1 , wherein the phase difference between the transmitted light of the third region and the transmitted light of the fourth region is greater than π/2.

12. The surface emitting laser according to claim 1 , wherein the phase difference between the transmitted light of the third region and the transmitted light of the fourth region is greater than π/2 and less than 3π/2.

13. An image forming apparatus comprising:
a surface emitting laser array in which a plurality of surface emitting lasers according to claim 1 are arranged;
a photosensitive member configured to form an electrostatic latent image by light from the surface emitting laser array;
a charging unit configured to charge the photosensitive member; and
a developing unit configured to develop the electrostatic latent image.

Assignees

• Ikuta Mitsuhiro
• Canon Kk

Inventors

• Ikuta Mitsuhiro

Classifications

• H01S2301/18

  Semiconductor lasers with special structural design for influencing the near- or far-field · CPC title

• H01S5/18344

  characterized by the mesa, e.g. dimensions or shape of the mesa · CPC title

• B41J2/471 Primary

  using dot sequential main scanning by means of a light deflector, e.g. a rotating polygonal mirror · CPC title

• H01S5/18391

  Aperiodic structuring to influence the near- or far-field distribution · CPC title

• H01S5/34326

  with a well layer based on InGa(Al)P, e.g. red laser · CPC title