Photoelectric conversion device, manufacturing method thereof, and photoelectric conversion module

Patent metadata

Field	Value
Publication number	US-9929294-B2
Application number	US-201314373759-A
Country	US
Kind code	B2
Filing date	Jan 31, 2013
Priority date	May 14, 2012
Publication date	Mar 27, 2018
Grant date	Mar 27, 2018

Abstract

A photoelectric conversion device includes an n-type semiconductor layer and a p-type semiconductor layer, a collecting electrode formed on the n-type semiconductor layer, and a collecting electrode formed on the p-type semiconductor layer, on a back surface opposite to a light receiving surface of an n-type crystalline silicon substrate, and an n-type semiconductor region on a surface on a light receiving surface side of the n-type crystalline silicon substrate, wherein in the n-type semiconductor region, an n-type semiconductor region that is opposed to the n-type semiconductor layer with the n-type crystalline silicon substrate therebetween and an n-type semiconductor region that is opposed to the p-type semiconductor layer with the n-type crystalline silicon substrate therebetween have different average impurity concentrations.

First claim

The invention claimed is:

1. A photoelectric conversion device comprising:
a first-conductivity-type semiconductor substrate;
a first-conductivity-type first semiconductor layer, a second-conductivity-type second semiconductor layer, a first electrode formed on the first-conductivity-type first semiconductor layer,
and a second electrode formed on the second-conductivity-type second semiconductor layer, wherein the first-conductivity-type first semiconductor layer, the second-conductivity-type second semiconductor layer, the first electrode, and the second electrode all formed on a back surface opposite to a light receiving surface of the first-conductivity-type semiconductor substrate; and
a first-conductivity-type semiconductor region on a surface on a light receiving surface side of the first-conductivity-type semiconductor substrate, wherein
the first-conductivity-type semiconductor region includes a first region that is directly opposed to the first-conductivity-type first semiconductor layer in a thickness direction of the photoelectric conversion device with the first-conductivity-type semiconductor substrate therebetween and a second region that is directly opposed to the second-conductivity-type second semiconductor layer in the thickness direction with the first-conductivity-type semiconductor substrate therebetween,
the first region and the second region have different average impurity concentrations, and
an average impurity concentration of the first region is lower than an average impurity concentration of the second region.

2. The photoelectric conversion device according to claim 1 , wherein the first region and the second region have approximately same thickness.

3. The photoelectric conversion device according to claim 2 , wherein
the second region is formed by laminating a first layer and a second layer,
the first layer has an average impurity concentration equivalent to that of the first region,
the first layer is arranged on a back surface side of the first-conductivity-type semiconductor region in a thickness direction of the first-conductivity-type semiconductor region,
the second layer has an average impurity concentration higher than that of the first layer, and
the second layer is arranged on a light receiving surface side of the first-conductivity-type semiconductor region in the thickness direction of the first-conductivity-type semiconductor region.

4. The photoelectric conversion device according to claim 1 , wherein an impurity penetration depth of the first region is shallower than an impurity penetration depth of the second region.

5. The photoelectric conversion device according to claim 1 , further comprising a third semiconductor layer having an impurity concentration lower than that of the first-conductivity-type first semiconductor layer and the second-conductivity-type second semiconductor layer,
wherein the third semiconductor layer is formed between the first-conductivity-type first semiconductor layer and the first-conductivity-type semiconductor substrate, and between the second-conductivity-type second semiconductor layer and the first-conductivity-type semiconductor substrate.

6. The photoelectric conversion device according to claim 1 , wherein a first-conductivity-type fourth semiconductor layer is formed on the surface on the light receiving surface side of the first-conductivity-type semiconductor substrate.

7. The photoelectric conversion device according to claim 1 , wherein a dielectric layer is formed on the surface on the light receiving surface side of the first-conductivity-type semiconductor substrate.

8. The photoelectric conversion device according to claim 7 , wherein the dielectric layer is formed of silicon oxide or silicon nitride.

9. The photoelectric conversion device according to claim 1 , wherein the first-conductivity-type first semiconductor layer and the second-conductivity-type second semiconductor layer are alternately arranged on the back surface of the first-conductivity-type semiconductor substrate.

10. The photoelectric conversion device according to claim 1 , further comprising a transparent electrode between the first-conductivity-type first semiconductor layer and the first electrode and between the second-conductivity-type second semiconductor layer and the second electrode.

11. A photoelectric conversion module, wherein at least two or more of the photoelectric conversion devices according to claim 1 are electrically connected in series or parallel.

12. The photoelectric conversion device according to claim 1 , further comprising a first passivation film formed between the first-conductivity-type first semiconductor layer and the first-conductivity-type semiconductor substrate and between the second-conductivity-type second semiconductor layer and the first-conductivity-type semiconductor substrate.

13. The photoelectric conversion device according to claim 12 , further comprising a second passivation film formed between the second-conductivity-type second semiconductor layer and the first-conductivity-type semiconductor substrate.

Assignees

• Tokioka Hidetada
• Sato Takehiko
• Mitsubishi Electric Corp

Inventors

• Tokioka Hidetada
• Sato Takehiko

Classifications

• H01L31/02167

  Electricity · mapped topic

• H01L31/1824

  Electricity · mapped topic

• H01L31/1804

  Electricity · mapped topic

• H01L31/0682

  Electricity · mapped topic

• Y02E10/547

  Monocrystalline silicon PV cells · CPC title