Method for manufacturing graphine film electronic device

Patent metadata

Field	Value
Publication number	US-9929237-B2
Application number	US-201514924084-A
Country	US
Kind code	B2
Filing date	Oct 27, 2015
Priority date	May 1, 2013
Publication date	Mar 27, 2018
Grant date	Mar 27, 2018

Abstract

A GNR is a ribbon-shaped graphene film which includes: five or more (for example, five, seven, or nine) six-membered rings of carbon atoms which are bonded and arranged in line in a short side direction; and a complete armchair type edge structure along a long side direction. By such a constitution, without using a transfer method, there are materialized a highly reliable graphene film which has an armchair type edge structure with a uniform width at a desired value and which enables an electric current on-off ratio of 10 5 or more that is practically sufficient for exhibiting a desired band gap.

First claim

What is claimed is:

1. A method for manufacturing an electronic device, the method comprising:
forming a thin metal wire on an insulating material;
by a thermal conversion type precursor method with using a pentacene dimer precursor in which a Br group is introduced to each one side of a benzene rings in a center of two pentacene skeletal structures, or by a thermal conversion type precursor method and a photo conversion type precursor method with using a pentacene dimer precursor in which Br groups respectively introduced to both sides of a benzene ring in a center of one pentacene skeletal structure or a nonacene precursor, forming a ribbon-shaped graphene film that has five or more six-membered rings of carbon atoms which are bonded and arranged in line in a short side direction and an armchair type edge structure along a long side direction, on the thin metal wire; and
removing the thin metal wire.

2. The method for manufacturing the electronic device according to claim 1 ,
wherein in the graphene film a width of a portion where the five or more six-membered rings of carbon atoms are bonded and arranged in line in the short side direction is 1.2 nm or more.

3. The method for manufacturing the electronic device according to claim 1 ,
wherein the insulating material is a substrate of an insulating crystal.

4. The method for manufacturing the electronic device according to claim 1 ,
wherein the thin metal wire is formed of at least one kind selected from Au, Ag, Cu, Co, Ni, Pd, Ir, and Pt.

Assignees

• Fujitsu Ltd

Inventors

• Yamaguchi Junichi
• Sato Shintaro
• Yamada Hiroko
• Tanaka Kazuki

Classifications

• H10P14/3462

  Nanowires · CPC title

• H10P14/3406

  Carbon, e.g. diamond-like carbon · CPC title

• H10P14/3258

  Crystal orientation · CPC title

• H10P14/3256

  Microstructure · CPC title

• H10P14/3241

  being conductive materials · CPC title