Film-like wafer mold material, molded wafer, and semiconductor device

Patent metadata

Field	Value
Publication number	US-9929068-B2
Application number	US-201213410887-A
Country	US
Kind code	B2
Filing date	Mar 2, 2012
Priority date	Mar 16, 2011
Publication date	Mar 27, 2018
Grant date	Mar 27, 2018

Abstract

A film-like wafer mold material for molding a wafer in a lump, the material including a multilayer structure constituted of at least a first film layer and a second film layer provided on the first film layer, wherein the first film layer contains a silicone-backbone-containing polymer, a cross-linking agent, and a filler, and the second film layer, contains a silicone-backbone-containing polymer and a cross-linking agent, and further contains a filler in such a manner that a content rate of the filler becomes 0 or above and less than 100 when a content rate of the filler contained in the first film layer is assumed to be 100. The film-like wafer mold material has excellent transference performance with respect to a thin-film wafer with a large diameter, also has low-warp properties and excellent wafer protection performance after form shaping (after molding), and is preferably used for a wafer level package.

First claim

What is claimed is:

1. A wafer mold material film for wafer molding, comprising:
a multilayer structure constituted of at least a first film layer and a second film layer provided on the first film layer,
wherein the first film layer contains a silicone-backbone-containing polymer, a cross-linking agent, and a filler,
the second film layer contains a silicone-backbone-containing polymer and a cross-linking agent, and further contains a filler in that a content rate of the filler is above 0 and less than 100 based on a content rate of the filler contained in the first film layer of 100, and
the silicone-backbone-containing polymer contained in the first film layer and the second film layer have a repeating unit a, a repeating unit b, a repeating unit c, and a repeating unit d in the following general formula (1) and has a weight average molecular weight of 3,000 to 500,000,

wherein R 1 to R 4 may be the same or different and represent univalent hydrocarbon groups having carbon numbers from 1 to 8; m represents an integer number from 1 to 100; each of a, b, c, and d represents a positive number, and satisfies a+b+c+d=1, provided that 0.3≤a≤0.7, 0.2≤b≤0.5, 0<c≤0.2, and 0<d≤0.2; further, X and Y are different, and each of X and Y represents a bivalent organic group represented by the following general formula (2) or the following general formula (3), and groups represented by both formula (2) and formula (3) are present,

wherein Z represents a bivalent organic group selected from the following chemical structures;

and n represents 0 or 1; each of R 5 or R 6 represents an alkyl group or an alkoxy group having a carbon number from 1 to 4, and may be the same or different; k represents any one of 0, 1, and 2,

wherein V represents a bivalent organic group selected from the following chemical structures;

and p represents 0 or 1; each of R 7 and R 8 represents an alkyl group or an alkoxy group having a carbon number from 1 to 4, and may be the same or different; h represents any one of 0, 1, and 2.

2. The wafer mold material film according to claim 1 , wherein the cross-linking agents contained in the first film layer and the second film layer are epoxy compounds.

3. The wafer mold material film according to claim 1 , wherein a thickness of the first film layer is 20 μm to 400 μm and a thickness of the second film layer is 20 μm to 650 μm.

4. The wafer mold material film according to claim 1 , wherein the silicone-backbone-containing polymer contained in the first film layer and the second film layer have a weight average molecular weight of 5,000 to 300,000.

5. The wafer mold material film according to claim 1 , wherein the content rate of the filler in the first film layer is 60 to 98 mass % of the total mass of the first film layer.

6. The wafer mold material film according to claim 1 , wherein the content of the filler in the first film layer is 75 to 93 mass % of the total mass of the first film layer.

7. The wafer mold material film according to claim 1 , wherein the content rate of the filler is from 5 to 50 mass % in the second film layer based on the content rate of filler in the first film layer.

8. The wafer mold material film according to claim 1 , wherein a thickness of the wafer mold material film is 700 μm or below.

9. The wafer mold material film according to claim 8 , wherein the cross-linking agents contained in the first film layer and the second film layer are epoxy compounds.

Assignees

• Sugo Michihiro
• Kondo Kazunori
• Shinetsu Chemical Co

Inventors

• Sugo Michihiro
• Kondo Kazunori

Classifications

• H10W74/476

  Organic materials comprising silicon · CPC title

• H10W74/473 Primary

  containing a filler · CPC title

• H10W74/40 Primary

  characterised by their materials · CPC title

• H01L2924/0002

  Electricity · mapped topic

• C08L63/00

  Compositions of epoxy resins; Compositions of derivatives of epoxy resins · CPC title