Atomic layer chemical patterns for block copolymer assembly

Patent metadata

Field	Value
Publication number	US-9927706-B2
Application number	US-201615215016-A
Country	US
Kind code	B2
Filing date	Jul 20, 2016
Priority date	Jul 20, 2015
Publication date	Mar 27, 2018
Grant date	Mar 27, 2018

Abstract

Provided herein are methods of directed self-assembly (DSA) on atomic layer chemical patterns and related compositions. The atomic layer chemical patterns may be formed from two-dimensional materials such as graphene. The atomic layer chemical patterns provide high resolution, low defect directed self-assembly. For example, DSA on a graphene pattern can be used achieve ten times the resolution of DSA that is achievable on a three-dimensional pattern such as a polymer brush. Assembly of block copolymers on the atomic layer chemical patterns may also facilitate subsequent etch, as the atomic layer chemical patterns are easier to etch than conventional pattern materials.

First claim

What is claimed is:

1. A composition comprising:
a chemical pattern comprising a patterned two-dimensional material; and a microphase-separated block copolymer material overlying the chemical pattern, wherein domains of the microphase-separated block copolymer material are assembled in accordance with the chemical pattern.

2. The composition of claim 1 , wherein the two-dimensional material is selected from graphene, graphyne, borophene, silicene, stanene, boron nitride, rhodium, palladium, nickel HITP, tungsten diselenide, and molybdenum disulfide.

3. The composition of claim 1 , wherein the two-dimensional material is a transition metal dichalcogenide.

4. The composition of claim 1 , wherein patterned features of the chemical pattern have a first density and the domains of the microphase-separated block copolymer material have a second density and wherein the second density is greater than the first density.

5. The composition of claim 4 , wherein the second density is at least five times greater than the first density.

6. The composition of claim 5 , wherein the second density is at least ten times greater than the first density.

7. The composition of claim 1 , wherein the chemical pattern includes a feature that differs from the bulk morphology of the block copolymer.

8. The composition of claim 1 , wherein the two-dimensional material is an inorganic material.

9. The composition of claim 1 , wherein the chemical pattern does not include a polymer brush, a polymer mat, or a self-assembled monolayer.

10. The composition of claim 1 , wherein the two-dimensional material has closed bonds in two-dimensions.

11. The composition of claim 1 , wherein the two-dimensional material is selected from carbon nitride and silicon carbide.

12. The composition of claim 1 , wherein the microphase-separated block copolymer is microphase-separated into periodic domains.

13. The composition of claim 1 , wherein the chemical pattern comprises periodic pattern features.

14. A method comprising:
providing a composition comprising: a) a chemical pattern, the chemical pattern comprising a patterned two-dimensional material and b) a microphase-separated block copolymer material overlying the chemical pattern, wherein domains of the microphase-separated block copolymer material are assembled in accordance with the chemical pattern and wherein the domains of the microphase-separate block copolymer material form a second pattern; and
transferring the second pattern to a substrate.

15. The method of claim 14 , wherein providing the composition comprises patterning a substrate with the two-dimensional material and depositing the block copolymer material on the two-dimensional material.

16. The method of claim 14 , further comprising inducing the block copolymer material to self-assemble in accordance with the chemical pattern.

17. An integrated circuit or patterned media formed by a method of claim 14 .

Assignees

• Univ Chicago
• Wisconsin Alumni Res Found

Inventors

• Nealey Paul Franklin
• Chang Tzu-Hsuan
• Xiong Shisheng
• Ma Zhenqiang
• Arnold Michael Scott
• Jacobberger Robert

Classifications

• H10P76/20

  of masks comprising organic materials · CPC title

• H10P50/695

  characterised by the process involved to create the mask, e.g. lift-off masks or sidewalls or to modify the mask · CPC title

• H10P50/692 Primary

  characterised by their composition, e.g. multilayer masks or materials · CPC title

• H10P14/3436

  being chalcogenide semiconductor materials not being oxides, e.g. ternary compounds · CPC title

• H10P14/3406

  Carbon, e.g. diamond-like carbon · CPC title