Additive for resist underlayer film-forming composition and resist underlayer film-forming composition containing the same

Patent metadata

Field	Value
Publication number	US-9927705-B2
Application number	US-201414904316-A
Country	US
Kind code	B2
Filing date	Jul 16, 2014
Priority date	Jul 23, 2013
Publication date	Mar 27, 2018
Grant date	Mar 27, 2018

Abstract

An additive for a resist underlayer film-forming composition that modifies a surface state of a resist underlayer film into a hydrophobic state to enhance adhesion between the resist underlayer film and a resist pattern formed on the resist underlayer film, and a resist underlayer film-forming composition containing the additive. An additive for a resist underlayer film-forming composition including a polymer having a structural unit of Formula (1):

(wherein R1 is a hydrogen atom or methyl group, L is a single bond or a divalent linking group, and X is an aliphatic hydrocarbon group, an alicyclic hydrocarbon group, or a heterocyclic group having an oxygen atom as a heteroatom that does not have a hydroxy group). A resist underlayer film-forming composition for lithography including a resin binder, an organic solvent, and the additive.

First claim

The invention claimed is:

1. A resist underlayer film-forming composition for lithography comprising:
a resin binder,
an organic solvent,
a cross-linking agent, and
an additive comprising a terpolymer comprising a structural unit of Formula (1), a structural unit of Formula (2a), and a structural unit of Formula (2b):

where:
R 1 and R 2 are each independently a hydrogen atom or methyl group,
L is a single bond or a divalent linking group,
M is a single bond or a linking group containing at least one selected from the group consisting of a —C(═O)— group, a —CH 2 — group, and a —O— group,
X is an aliphatic hydrocarbon group, an alicyclic hydrocarbon group, or a heterocyclic group having an oxygen atom as a heteroatom that does not have a hydroxy group,
Y 1 is a C 2-6 alkyl group in which at least one hydrogen atom is substituted by a fluorine atom, and
Y 2 is a C 1-6 alkyl group having at least one hydroxy group, alkoxy group, or carboxyl group,

wherein:
the terpolymer in the additive is contained in an amount in a range of from 5% by mass to 15% by mass relative to a solid content of the resist underlayer film-forming composition obtained by removing the organic solvent, and
a ratio of the resin binder to a solid content of the resist underlayer film-forming composition obtained by removing the organic solvent is in a range of from 60% by mass to 90% by mass.

2. The resist underlayer film-forming composition according to claim 1 , wherein the divalent linking group contains at least one selected from the group consisting of a —C(═O)— group, a —CH 2 — group, a —O— group, and a phenylene group.

3. The resist underlayer film-forming composition according to claim 1 , further comprising a cross-linking catalyst.

4. A method for producing a semiconductor element, comprising:
applying the resist underlayer film-forming composition according to claim 1 onto a substrate having a film to be processed to form a transferred pattern,
baking the resist underlayer film-forming composition to form a resist underlayer film,
coating the resist underlayer film with a resist,
irradiating the substrate coated with the resist with a radiation selected from the group consisting of a KrF excimer laser, an ArF excimer laser, an extreme ultraviolet light, and an electron beam,
developing the resist to form a resist pattern, and
dry-etching the resist using the resist pattern as a mask to transfer the pattern onto the substrate.

Assignees

• Nissan Chemical Ind Ltd

Inventors

• Fujitani Noriaki
• Endo Takafumi
• Ohnishi Ryuji
• Sakamoto Rikimaru

Classifications

• H10P76/2043

  using an anti-reflective coating · CPC title

• H10P76/405

  characterised by their composition, e.g. multilayer masks · CPC title

• H10P50/696

  Process specially adapted to improve the resolution of the mask · CPC title

• H10P50/695

  characterised by the process involved to create the mask, e.g. lift-off masks or sidewalls or to modify the mask · CPC title

• H10P50/694

  characterised by their behaviour during the process, e.g. soluble masks or redeposited masks · CPC title