Method and system for a low-voltage integrated silicon high-speed modulator
US-9541775-B2 · Jan 10, 2017 · US
US9927677B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9927677-B2 |
| Application number | US-201615179031-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jun 10, 2016 |
| Priority date | Jun 10, 2016 |
| Publication date | Mar 27, 2018 |
| Grant date | Mar 27, 2018 |
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An optical interferometer device is provided including a waveguide interferometer. The waveguide interferometer includes first and second waveguide arms in a waveguide plane, each waveguide arm including a n-type region and a p-type region forming a junction. The n-type region and the p-type region of the second waveguide arm are translationally symmetric with respect to the n-type region and the p-type region, respectively, of the first waveguide arm in the waveguide plane.
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What is claimed is: 1. An optical device, comprising: a waveguide interferometer including first and second waveguide arms in a waveguide plane, each waveguide arm comprising a n-type region and a p-type region forming a lateral p-n junction; wherein the n-type region and the p-type region of the second waveguide arm are translationally symmetric in the waveguide plane with respect to the n-type region and the p-type region, respectively, of the first waveguide arm, wherein the n-type regions of the junctions of the first and second waveguide arms are electrically coupled to each other, and wherein the p-type regions of the junctions of the first and second waveguide arms are electrically coupled to each other. 2. The optical device according to claim 1 , wherein the junctions of the first and second waveguide arms extend along the respective waveguide arms, such that a distance between n-type regions of the junctions is substantially equal to a distance between the p-type regions of the junctions. 3. The optical device according to claim 1 , wherein the junctions of the first and second waveguide arms comprise parallel sections. 4. The optical device according to claim 1 , wherein the optical device is a photonic switch, an optical modulator, or a tunable optical filter. 5. The optical device according to claim 1 , wherein the junction of each waveguide arm is formed by carrier injection. 6. The optical device according to claim 1 , wherein the junction of each waveguide arm is formed by carrier depletion. 7. The optical device according to claim 1 , wherein the junction of each waveguide arm is formed by Franz-Keldysh effect. 8. The optical device according to claim 1 , wherein the junction of each waveguide arm is formed by quantum confined Stark effect (QCSE). 9. The optical device according to claim 1 , wherein the waveguide interferometer is a Mach-Zehnder interferometer. 10. The optical device according to claim 1 , wherein the waveguide interferometer is a Michelson interferometer. 11. The optical device according to claim 1 , wherein the waveguide interferometer is a ring-assisted Mach-Zehnder interferometer. 12. The optical device according to claim 1 , wherein each waveguide arm includes at least one bend. 13. The optical device according to claim 12 , wherein each junction is L-shaped. 14. The optical device according to claim 1 , wherein each waveguide arm has a zig-zag shape. 15. The optical device according to claim 1 , wherein the n-type region includes a plurality of n-type segments and the p-type region includes a plurality of p-type segments, and wherein the n-type segments and the p-type segments of the second waveguide arm are translationally symmetric with respect to the n-type segments and the p-type segments of the first waveguide arm in the waveguide plane. 16. The optical device according to claim 1 , further comprising a plurality of waveguide interferometers including the waveguide interferometer, wherein each waveguide interferometer includes first and second waveguide arms on a waveguide plane, each waveguide arm including a n-type region and a p-type region forming a junction; and wherein the n-type region and the p-type region of the second waveguide arm of each waveguide interferometer are translationally symmetric with respect to the n-type region and the p-type region of the corresponding first waveguide arm in the waveguide plane. 17. An optical device, comprising: a waveguide interferometer including first and second waveguide arms in a waveguide plane, each waveguide arm comprising a n-type region and a p-type region forming a lateral p-n junction; wherein the n-type region and the p-type region of the second waveguide arm are translationally symmetric in the waveguide plane with respect to the n-type region and the p-type region, respectively, of the first waveguide arm, wherein the n-type region of the junction of the first waveguide is electrically coupled to the p-type region of the junction of the second waveguide. 18. A method of manufacturing an optical interferometer device, comprising: forming optical waveguides of a waveguide interferometer, the waveguide interferometer including first and second waveguide arms in a waveguide plane; forming n-type regions for the first and second waveguide arms; and forming p-type regions for the first and second waveguide arms; wherein the n-type region and the p-type region of each waveguide arm form a lateral p-n junction between the n-type region and the p-type region, and the n-type region and the p-type region of the second waveguide arm are translationally symmetric in the waveguide plane with respect to the n-type region and the p-type region, respectively, of the first waveguide arm, wherein the n-type regions of the junctions of the first and second waveguide arms are electrically coupled to each other, and wherein the p-type regions of the junctions of the first and second waveguide arms are electrically coupled to each other.
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