Terahertz modulator based on low-dimension electron plasma wave and manufacturing method thereof

Patent metadata

Field	Value
Publication number	US-9927675-B2
Application number	US-201515317669-A
Country	US
Kind code	B2
Filing date	Jun 9, 2015
Priority date	Jun 10, 2014
Publication date	Mar 27, 2018
Grant date	Mar 27, 2018

Abstract

A terahertz modulator based on low-dimension electron plasma wave, a manufacturing method thereof, and a high speed modulation method are provided. The terahertz modulator includes a plasmon and a cavity. The present disclosure discloses the resonance absorption mechanism caused by collective oscillation of electrons (plasma wave, namely, the plasmon). In order to enhance the coupling strength between the terahertz wave and the plasmon, a GaN/AlGaN high electron mobility transistor structure having a grating gate is integrated in a terahertz Fabry-Pérot cavity, and a plasmon polariton is formed arising from strong coupling of the plasmon and a cavity mode.

First claim

What is claimed:

1. A terahertz modulator based on low-dimension electron plasma wave, comprising a plasmon and a cavity; wherein
the plasmon comprises:
a GaN/AlGaN high electron mobility transistor, comprising: a source electrode, a drain electrode and a single grating gate;
a quasi-two-dimensional electron layer formed on the side of a narrow bandgap semiconductor at a semiconductor heterojunction of the transistor, for exciting plasma wave, and
the cavity comprises a dielectric cavity formed from a surface where a grating contacts with a device, which represents the modulator, to a lower surface of a thinned sapphire substrate.

2. The terahertz modulator of claim 1 , wherein the single grating gate is a one-dimensional grating or an interdigital grating.

3. The terahertz modulator of claim 1 , wherein the cavity is a Fabry-Pérot cavity formed by interfaces of a thinned the device itself.

4. The terahertz modulator of claim 1 , wherein the single grating gate is any one of a planar two-dimensional grid grating, a concentric circular grating, and a terahertz metamaterial grating.

5. The terahertz modulator of claim 1 , wherein the cavity is a cavity coplanar with the two-dimensional electron gas.

6. The terahertz modulator of claim 1 , wherein the quasi-two-dimensional electron layer refers to electrons in a semiconductor two-dimensional electron channel, and the resonance absorption of the terahertz wave is achieved by exciting the collective oscillation of the electrons, and the absorption is further enhanced through a strong coupling with the cavity mode.

7. The terahertz modulator of claim 1 , wherein the terahertz modulator further comprises a symmetrical cavity structure constituted by identical dielectric layers.

8. A method of manufacturing the terahertz modulator, including
step I. forming a two-dimensional electron-gas mesa of an active region of a device on a GaN/AlGaN two-dimensional electron-gas die;
step II. forming source and drain ohmic contacts;
step III. forming a grating gate;
step IV. forming lead electrodes of the grating gate and the ohmic contact and a pattern transfer for wafer bonding; and
step V. thinning and polishing the back side of a sapphire substrate to form a cavity structure.

9. The method of manufacturing the terahertz modulator of claim 8 , wherein in step I, the GaN/AlGaN two-dimensional electron-gas die refers to a square die of 1.5 cm by 1.5 cm obtained by dividing a 2 inch GaN/AlGaN two-dimensional electron-gas wafer by using a laser scribing machine; and the pattern transfer of the two-dimensional electron-gas mesa is achieved by using a UV lithography process, thereafter, the two-dimensional electron-gas material is etched by using an inductively coupled plasma in order to form an active region mesa of the device.

10. The method of manufacturing the terahertz modulator of claim 8 , wherein step II further includes lithography, which is followed by adopting the electron beam evaporation process to evaporate the multilayer metal structure of the ohmic contact on the two-dimensional electron-gas mesa, forming an ohmic contact metal pattern after lift-off process, and placing the formed pattern in a rapid annealing furnace for annealing to form source and drain ohmic contacts.

11. The method of manufacturing the terahertz modulator of claim 8 , wherein the forming the grating gate in step III includes lithography, which is followed by evaporating and depositing Ti/Au or Ni/Au by using electron beams, and forming a metal grating gate structure after lift-off process; wherein in step IV, the lithography is performed first, then the Ti/Au or Ni/Au is evaporated and deposited by using electron beams, and the corresponding electrode structure is formed after lift-off process.

12. The method of manufacturing the terahertz modulator of claim 8 , wherein the sample substrate is thinned by using a thinning machine and polished by using a chemical machine to form the cavity structure.

13. The method of manufacturing the terahertz modulator of claim 8 , wherein a step of laser scribing and manual dissociation is performed after step V to form a single grating coupled two-dimensional electron-gas chip through splitting.

14. A method of manufacturing a terahertz modulator with a symmetrical dielectric cavity, including steps of manufacturing a dielectric cavity and bonding the dielectric cavity and a two-dimensional electron-gas chip together, wherein
the manufacturing the dielectric cavity includes:
thinning and polishing a cavity flat plate material;
performing pattern transfer of a wafer bonding region on the cavity flat plate material; and
achieving transfer of a flip-chip bonding pattern in the bonding metal region.

15. The method of manufacturing the terahertz modulator with the symmetrical dielectric cavity of claim 14 , wherein the performing pattern transfer of the wafer bonding region on the cavity flat plate material is achieved by evaporating and depositing the Ti/Au or Ni/Au by using electron beams and forming the chip bonding metal region through lift-off process.

16. The method of manufacturing the terahertz modulator with the symmetrical dielectric cavity of claim 14 , wherein the transfer of the flip-chip bonding pattern in the bonding metal region is achieved by thermal evaporating and depositing the indium and obtaining a required flip-chip bonding indium cylinder through lift-off process.

17. The method of manufacturing the terahertz modulator with the symmetrical dielectric cavity of claim 14 , wherein the bonding of the dielectric cavity and the two-dimensional electron-gas chip together includes: aligning the dielectric cavity and the two-dimensional electron-gas chip, applying pressure after heating, bonding together through gold-indium solid solution, and eventually being refluxed in a reflow oven.

18. The method of manufacturing the terahertz modulator of claim 9 , wherein the sample substrate is thinned by using a thinning machine and polished by using a chemical machine to form the cavity structure.

19. The method of manufacturing the terahertz modulator of claim 9 , wherein a step of laser scribing and manual dissociation is performed after step V to form a single grating coupled two-dimensional electron-gas chip through splitting.

Assignees

• Suzhou Inst Nano Tech & Nano Bionics Sinano Cas
• Suzhou Inst Nano Tech & Nano Bionics Sinano Cas

Inventors

• Huang Yongdan
• Qin Hua
• Zhang Zhipeng
• Yu Yao

Classifications

• H10P54/00

  Cutting or separating of wafers, substrates or parts of devices · CPC title

• H10P50/242

  of Group IV materials · CPC title

• H10P14/3416

  Nitrides · CPC title

• H10D64/0116

  to Group III-V semiconductors · CPC title

• H10D62/8503

  Nitride Group III-V materials, e.g. AlN or GaN · CPC title