Systems and methods for improving imaging by sub-pixel calibration

US9927539B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9927539-B2
Application numberUS-201715613998-A
CountryUS
Kind codeB2
Filing dateJun 5, 2017
Priority dateFeb 20, 2015
Publication dateMar 27, 2018
Grant dateMar 27, 2018

How to read this patent

A practical reading order for non-experts. Skip the full description unless you need deep technical detail.

  1. Title

    What the patent document calls the invention.

  2. Abstract

    A short plain-language summary of the technical disclosure.

  3. Assignees and inventors

    Who owns or filed the patent and who is credited as inventor.

  4. Key dates

    Filing, priority, publication, and grant dates set the timeline.

  5. First independent claim

    The legal scope of protection — read this for what is actually claimed.

  6. CPC / IPC classifications

    Technology tags used to group this patent with similar filings.

  7. Citations and related patents

    Prior art links and similar publications in this corpus.

Abstract

Official abstract text for this publication.

A radiation detector assembly is provided that includes a semiconductor detector having a surface, plural pixelated anodes, and at least one processor. The pixelated anodes are disposed on the surface. Each pixelated anode is configured to generate a primary signal responsive to reception of a photon by the pixelated anode and to generate at least one secondary signal responsive to an induced charge caused by reception of a photon by at least one adjacent anode. The at least one processor is operably coupled to the pixelated anodes. The at least one processor configured to define sub-pixels for each pixelated anode; acquire signals corresponding to acquisition events from the pixelated anodes; determine sub-pixel locations for the acquisition events using the signals; and apply at least one calibration parameter on a per sub-pixel basis for the acquisition events based on the determined sub-pixel locations.

First claim

Opening claim text (preview).

What is claimed is: 1. A radiation detector assembly comprising: a semiconductor detector having a surface; plural pixelated anodes disposed on the surface, the pixelated anodes configured to generate primary signals responsive to reception of photons by the pixelated anodes and to generate secondary signals responsive to induced charges caused by reception of photons by at least one adjacent anode; and at least one processor operably coupled to the pixelated anodes, the at least one processor configured to: define sub-pixels for each pixelated anode, the sub-pixels defined using a predetermined grid defined across the surface, the predetermined grid defined independently of a depth of interaction of acquired events; acquire signals comprising the primary signals and the secondary signals corresponding to acquisition events from the pixelated anodes; determine sub-pixel locations for the acquisition events using the signals; and apply at least one calibration parameter on a per sub-pixel basis for the acquisition events based on the determined sub-pixel locations. 2. The radiation detector assembly of claim 1 , wherein the at least one calibration parameter comprises a sub-pixel adjustment parameter for each sub-pixel that is independently determined for each sub-pixel. 3. The radiation detector assembly of claim 1 , wherein the at least one processor is configured to apply the sub-pixel adjustment parameter to each sub-pixel before combining sub-pixel signals for corresponding pixels. 4. The radiation detector assembly of claim 1 , wherein the at least one calibration parameter comprises a sensitivity calibration parameter. 5. The radiation detector assembly of claim 1 , wherein the at least one calibration parameter comprises a sub-pixel count parameter for each sub-pixel, wherein the at least one processor is configured to adjust a total number of counts for acquisition events for each sub-pixel using the corresponding sub-pixel count parameter. 6. The radiation detector assembly of claim 1 , wherein the at least one processor is configured to apply a uniformity map calibration to the signals. 7. The radiation detector assembly of claim 1 , wherein the at least one calibration parameter comprises at least one energy calibration parameter, and wherein at least one processor is configured to: generate a sub-pixel energy spectrum for each sub-pixel, using the primary signals, to produce sub-pixel energy spectra; apply at least one energy calibration parameter to adjust the sub-pixel energy spectra for each pixelated anode to produce calibrated sub-pixel energy spectra; and for each pixelated anode, combine the calibrated sub-pixel energy spectra to provide a pixelated anode spectrum. 8. The detector assembly of claim 7 , wherein the at least one processor is configured to align respective peaks of the sub-pixel energy spectra for each pixelated anode using the at least one energy calibration parameter. 9. The detector assembly of claim 7 , wherein the at least one energy calibration parameter is selected from a group of parameters comprising a gain and an offset, wherein applying the gain adjusts a position and a breadth of a peak of an energy spectrum being adjusted and applying the offset shifts a peak location of the spectrum being adjusted. 10. A method of imaging using a semiconductor detector having a surface with plural pixelated anodes disposed thereon, the pixelated anodes configured to generate primary signals responsive to reception of photons by the pixelated anodes and to generate secondary signals responsive to an induced charges caused by reception of photons by at least one adjacent anodes the method comprising: defining, with at least one processor operably coupled to the pixelated anodes, sub-pixels for each pixelated anode, the sub-pixels defined using a predetermined grid defined across the surface, the predetermined grid defined independently of a depth of interaction of acquired events; acquiring, with the at least one processor, signals comprising the primary and secondary signals corresponding to acquisition events from the pixelated anodes; determining, with the at least one processor, sub-pixel locations for the acquisition events using the signals; and applying, with the at least one processor, at least one calibration parameter on a per-sub-pixel bases for the acquisition events based on the determined sub-pixel locations. 11. The method of claim 10 , wherein the at least one calibration parameter comprises a sub-pixel adjustment parameter for each sub-pixel that is independently determined for each sub-pixel. 12. The method of claim 10 , further comprising applying the sub-pixel adjustment parameter to each sub-pixel before combining sub-pixel signals for corresponding pixels. 13. The method of claim 10 , wherein the at least one calibration parameter comprises a sensitivity calibration parameter. 14. The method of claim 10 , wherein the at least one calibration parameter comprises a sub-pixel count parameter for each sub-pixel, wherein the method further comprises adjusting a total number of counts for acquisition events for each sub-pixel using the corresponding sub-pixel count parameter. 15. The method of claim 10 , further comprising applying a uniformity map calibration to the signals. 16. The method of claim 10 , wherein the at least one calibration parameter comprises at least one energy calibration parameter, the method further comprising: generating a sub-pixel energy spectrum for each sub-pixel, using the primary signals, to produce sub-pixel energy spectra; applying at least one energy calibration parameter to adjust the sub-pixel energy spectra for each pixelated anode to produce calibrated sub-pixel energy spectra; and for each pixelated anode, combining the calibrated sub-pixel energy spectra to provide a pixelated anode spectrum. 17. A method of providing a radiation detector assembly comprising: providing a semiconductor detector having a surface with plural pixelated anodes disposed thereon, the pixelated anodes configured to generate primary signals responsive to reception of photons by the pixelated anodes and to generate secondary signals responsive to induced charges caused by reception of photons by at least one adjacent anode; operably coupling the pixelated anodes to at least one processor; defining, with the at least one processor, sub-pixels for each pixelated anode, the sub-pixels defined using a predetermined grid defined across the surface, the predetermined grid defined independently of a depth of interaction of acquired events; providing a calibrated radiation supply to the semiconductor detector, wherein the pixelated anodes generate calibrated signals comprising calibrated primary signals and calibrated secondary signals responsive to the calibrated radiation supply; acquiring, with the at least one processor, the calibrated signals from the pixelated anodes; determining sub-pixel locations for calibration acquisition events using the calibrated signals generated responsive to the calibrated radiation supply; determining a non-calibrated value for each sub-pixel; determining at least one calibration parameter to adjust the non-calibrated value for each sub-pixel to a desired value; and applying the at least one determined calibration parameter to the non-calibrated value for each sub-pixel to generate a calibrated value for each sub-pixel. 18. The method of claim 17 , wherein the at least one calibration parameter comprises a sensitivity calibration parameter.

Assignees

Inventors

Classifications

  • G01T7/005Primary

    calibration techniques (stabilization of spectrometer G01T1/40) · CPC title

  • using solid state detectors · CPC title

  • specially adapted for use in SPECT or PET (SPECT imaging G01T1/1642; PET imaging G01T1/2985; detecting prohibited goods, e.g. weapons, explosives, hazardous substances, contraband or smuggled objects G01V5/20) · CPC title

Patent family

Related publications grouped by family.

External sources

Frequently asked questions

Answers are generated from the same data shown on this page.

What does patent US9927539B2 cover?
A radiation detector assembly is provided that includes a semiconductor detector having a surface, plural pixelated anodes, and at least one processor. The pixelated anodes are disposed on the surface. Each pixelated anode is configured to generate a primary signal responsive to reception of a photon by the pixelated anode and to generate at least one secondary signal responsive to an induced c…
Who is the assignee on this patent?
Gen Electric
What technology area does this patent fall under?
Primary CPC classification G01T7/005. Mapped technology areas include Physics.
When was this patent published?
Publication date Tue Mar 27 2018 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).