Method for producing β-Ga2O3 substrate and method for producing crystal laminate structure including cutting out β-Ga2O3 based substrate from β-Ga2O3 based crystal

Patent metadata

Field	Value
Publication number	US-9926647-B2
Application number	US-201214351817-A
Country	US
Kind code	B2
Filing date	Oct 12, 2012
Priority date	Oct 14, 2011
Publication date	Mar 27, 2018
Grant date	Mar 27, 2018

Abstract

Provided are: a method for producing a β-Ga 2 O 3 substrate of which changes in donor concentration in a reducing atmosphere or an inert gas atmosphere are suppressed; and a method for producing a crystal laminate structure that can epitaxially grow a high-quality crystal film having low variability of quality in a reducing atmosphere or an inert gas atmosphere. The method for producing a β-Ga 2 O 3 substrate includes a step for cutting out a β-Ga 2 O 3 substrate from a β-Ga 2 O 3 crystal containing a group IV element; annealing processing in an atmosphere containing a reducing atmosphere and/or an inert gas atmosphere is performed on the β-Ga 2 O 3 crystal before cutting out the β-Ga 2 O 3 substrate, or on the cut-out β-Ga 2 O 3 substrate.

First claim

The invention claimed is:

1. A method for producing β-Ga 2 O 3 based substrate, the method comprising cutting out the β-Ga 2 O 3 based substrate from a β-Ga 2 O 3 based crystal containing a group IV element,
wherein an annealing processing in an inert gas atmosphere which does not comprise H 2 is performed on the β-Ga 2 O 3 based crystal before cutting out the β-Ga 2 O 3 based substrate or on the β-Ga 2 O 3 based substrate at a temperature of 1,000° C. to 1,725° C. to increase a donor concentration of the β-Ga 2 O 3 based crystal or the β-Ga 2 O 3 based substrate which is thereby made approximate to a concentration of the group IV element of the β-Ga 2 O 3 based crystal or the β-Ga 2 O 3 based substrate, and
wherein the annealing processing is performed for suppressing a change of the donor concentration of the β-Ga 2 O 3 based substrate to suppress a change of substrate temperature, when the β-Ga 2 O 3 based substrate is placed in a reduction atmosphere or the inert gas atmosphere after the annealing processing.

2. The method for producing a β-Ga 2 O 3 based substrate according to claim 1 , wherein the inert gas atmosphere comprises at least one of a N 2 atmosphere, an Ar atmosphere, a Ne atmosphere, and a He atmosphere.

3. The method for producing a β-Ga 2 O 3 based substrate according to claim 1 , wherein the group IV element comprises Si.

4. A method for producing a crystal laminate structure, the method comprising:
cutting out β-Ga 2 O 3 based substrate from a β-Ga 2 O 3 based crystal containing a group IV element; and
epitaxially growing a crystal film on the β-Ga 2 O 3 based substrate in a first atmosphere comprising at least one of a first reduction atmosphere and a first inert gas atmosphere,
wherein an annealing processing in a second inert gas atmosphere which does not comprise H 2 is performed on the β-Ga 2 O 3 based crystal before cutting out the β-Ga 2 O 3 based substrate at a temperature of 1,000° C. to 1,725° C. to increase a donor concentration of the β-Ga 2 O 3 based crystal or the β-Ga 2 O 3 based substrate which is thereby made approximate to a concentration of the group IV element of the β-Ga 2 O 3 based crystal or the β-Ga 2 O 3 based substrate, or on the β-Ga 2 O 3 based substrate before epitaxially growing the crystal film, and
wherein the annealing processing is performed for suppressing a change of the donor concentration of the β-Ga 2 O 3 based substrate to suppress a change of substrate temperature and a separation of the crystal film from the β-Ga 2 O 3 substrate, when the βGa 2 O 3 based substrate is placed in the first reduction atmosphere or the first inert gas atmosphere after the annealing processing.

5. The method for producing a crystal laminate structure according to claim 4 , wherein the first and second atmospheres comprise at least one of a N 2 atmosphere, an Ar atmosphere, a Ne atmosphere and a He atmosphere.

6. The method for producing a crystal laminate structure according to claim 4 , wherein the group IV element comprises Si.

7. The method for producing β-Ga 2 O 3 based substrate according to claim 1 , wherein the β-Ga 2 O 3 based crystal includes a β-Ga 2 O 3 single crystal.

8. The method for producing a β-Ga 2 O 3 based substrate according to claim 7 , wherein Al or In is added to the β-Ga 2 O 3 single crystal.

9. The method for producing a β-Ga 2 O 3 based substrate according to claim 8 , wherein the β-Ga 2 O 3 based crystal includes Si as a dopant.

10. The method for producing a crystal laminate structure according to claim 4 , wherein the β-Ga 2 O 3 based crystal includes a β-Ga 2 O 3 single crystal.

11. The method for producing a crystal laminate structure according to claim 10 , wherein Al or In is added to the β-Ga 2 O 3 single crystal.

12. The method for producing a crystal laminate structure according to claim 11 , wherein the β-Ga 2 O 3 based crystal includes Si as a dopant.

13. The method for producing a β-Ga 2 O 3 based substrate according to claim 1 , wherein an entirety of the annealing processing is performed in the inert gas atmosphere.

Assignees

• Tamura Seisakusho Kk
• Koha Co Ltd

Inventors

• Masui Takekazu
• Yamaoka Yu

Classifications

• C30B33/02

  Heat treatment (C30B33/04, C30B33/06 take precedence) · CPC title

• C30B29/16

  Oxides · CPC title

• C30B25/186 Primary

  being specially pre-treated by, e.g. chemical or physical means · CPC title

• H10P14/3434

  being oxide semiconductor materials (Group IIB-VIA semiconductor materials H10P14/3424) · CPC title

• H10P14/2918

  being semiconductor metal oxides (Group IIB-VIA materials H10P14/2913) · CPC title