Scanning ion beam deposition and etch
US-12176178-B2 · Dec 24, 2024 · US
US9926627B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9926627-B2 |
| Application number | US-201114364687-A |
| Country | US |
| Kind code | B2 |
| Filing date | Dec 21, 2011 |
| Priority date | Dec 21, 2011 |
| Publication date | Mar 27, 2018 |
| Grant date | Mar 27, 2018 |
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According to the present disclosure, a substrate processing apparatus for processing a flexible substrate including a vacuum chamber configured for being evacuated and being configured for having a process gas provided therein, a processing module adapted to process the flexible substrate, wherein the processing module is provided within the vacuum chamber, and a discharging assembly configured to generate a flow of charged particles to discharge the flexible substrate is provided. The discharging assembly is configured to generate an electric field for ionizing a processing gas.
Opening claim text (preview).
What is claimed is: 1. A substrate processing apparatus for processing a flexible substrate, comprising: a vacuum chamber configured for being evacuated and being configured for having a process gas provided therein; a processing module adapted to process the flexible substrate, wherein the processing module is provided within the vacuum chamber; a discharging assembly for connection to a power supply and configured to generate a flow of charged particles to discharge the flexible substrate within the vacuum chamber, wherein the discharging assembly is configured to generate an electrical field for ionizing the processing gas; a charge detection means for detecting a charge on the flexible substrate within the vacuum chamber before discharging; and a controller for connection to the power supply, wherein the controller is connected to the charge detection means and is adapted to control a polarity value and a voltage value of the power supply based on a charge detected by the charge detection means. 2. The substrate processing apparatus according to claim 1 , wherein the discharging assembly includes one or more spikes configured for being provided with a high voltage. 3. The substrate processing apparatus according to claim 2 , wherein the spikes are provided on one or more lances. 4. The substrate processing apparatus according to claim 2 , wherein the power supply is connectable to the one or more spikes. 5. The substrate processing apparatus according to claim 2 , wherein the one or more spikes are made of tungsten. 6. The substrate processing apparatus according to claim 3 , wherein at least one lance is positioned to face a first surface of the substrate. 7. The substrate processing apparatus according to claim 6 , wherein at least one other lance is positioned to face a second surface of the substrate that is opposite to the first surface of the substrate. 8. The substrate processing apparatus according to claim 1 , wherein the controller or the power supply are positioned outside of the vacuum chamber. 9. The substrate processing apparatus according to claim 1 , wherein the controller and the power supply are positioned outside of the vacuum chamber.
for coating elongated substrates · CPC title
Controlling or regulating the coating process · CPC title
Means for minimising impurities in the coating chamber such as dust, moisture, residual gases · CPC title
using DC or AC discharges · CPC title
Controlling or regulating the coating process {(C23C16/45557, C23C16/279 take precedence)} · CPC title
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