Method for manufacturing light-emitting device

Patent metadata

Field	Value
Publication number	US-9923174-B2
Application number	US-201615141157-A
Country	US
Kind code	B2
Filing date	Apr 28, 2016
Priority date	May 4, 2012
Publication date	Mar 20, 2018
Grant date	Mar 20, 2018

Abstract

A method for exposing an electrode terminal covered with an organic film in a light-emitting device without damaging the electrode terminal is provided. In a region of the electrode terminal to which electric power from an external power supply or an external signal is input, an island-shaped organic compound-containing layer is formed and the organic film is formed thereover. The organic film is removed by utilizing low adhesion of an interface between the organic compound-containing layer and the electrode terminal, whereby the electrode terminal can be exposed without damage to the electrode terminal.

First claim

What is claimed is:

1. A method for manufacturing a light-emitting device, comprising:
forming an electrode terminal and a first electrode layer;
forming a first layer over the electrode terminal and a second layer over the first electrode layer, the first layer and the second layer each containing a light-emitting substance;
forming a second electrode layer over the second layer, wherein a light-emitting element comprises the first electrode layer, the second layer, and the second electrode layer;
providing a support over the light-emitting element with a resin layer therebetween, the resin layer overlapping with the second electrode layer and the electrode terminal;
making a cut overlapping with the electrode terminal in at least the support; and
partly removing the resin layer and the first layer over the electrode terminal by using the cut, so that an opening overlapping with the electrode terminal is formed.

2. The method according to claim 1 , wherein:
the first layer is in contact with the electrode terminal, and
the second layer is in contact with the first electrode layer.

3. The method according to claim 1 , wherein the resin layer includes at least one of a light curable adhesive, a reactive curable adhesive, a heat curable adhesive, and an anaerobic adhesive.

4. The method according to claim 1 , wherein the support is flexible.

5. The method according to claim 1 , further comprising:
forming a conductive layer in the opening to be in contact with the electrode terminal.

6. The method according to claim 1 , further comprising:
removing the first layer remaining on the electrode terminal after forming the opening.

7. The method according to claim 1 , wherein the first layer and the second layer contain the same light-emitting substance.

8. A method for manufacturing a light-emitting device, comprising:
forming a transistor and an electrode terminal;
forming an insulating layer over the transistor;
forming a first electrode layer over the insulating layer, the first electrode layer electrically connected to the transistor;
forming a first layer over the electrode terminal and a second layer over the first electrode layer, the first layer and the second layer each containing a light-emitting substance;
forming a second electrode layer over the second layer, wherein a light-emitting element comprises the first electrode layer, the second layer, and the second electrode layer;
providing a support over the light-emitting element with a resin layer therebetween, the resin layer overlapping with the second electrode layer and the electrode terminal;
making a cut overlapping with the electrode terminal in at least the support; and
partly removing the resin layer and the first layer over the electrode terminal by using the cut, so that an opening overlapping with the electrode terminal is formed.

9. The method according to claim 8 , wherein the transistor comprises an oxide semiconductor layer.

10. The method according to claim 8 , wherein the insulating layer includes a polyimide resin.

11. The method according to claim 8 , wherein:
the first layer is in contact with the electrode terminal, and
the second layer is in contact with the first electrode layer.

12. The method according to claim 8 , wherein the resin layer includes at least one of a light curable adhesive, a reactive curable adhesive, a heat curable adhesive, and an anaerobic adhesive.

13. The method according to claim 8 , wherein the support is flexible.

14. The method according to claim 8 , further comprising:
forming a conductive layer in the opening to be in contact with the electrode terminal.

15. The method according to claim 8 , further comprising:
removing the first layer remaining on the electrode terminal after forming the opening.

16. The method according to claim 8 , wherein the first layer and the second layer contain the same light-emitting substance.

Assignees

• Semiconductor Energy Lab

Inventors

• Chida Akihiro
• Hatano Kaoru
• Aoyama Tomoya
• Komatsu Ryu
• Kataniwa Masatoshi

Classifications

• H10K71/00

  Manufacture or treatment specially adapted for the organic devices covered by this subclass · CPC title

• H10K50/80

  Constructional details · CPC title

• H01L2227/326

  Electricity · mapped topic

• H01L51/5237

  Electricity · mapped topic

• H01L51/5246

  Electricity · mapped topic