Sensor device, image sensor array and manufacturing method of sensor device

Patent metadata

Field	Value
Publication number	US-9923013-B1
Application number	US-201615356287-A
Country	US
Kind code	B1
Filing date	Nov 18, 2016
Priority date	Nov 18, 2016
Publication date	Mar 20, 2018
Grant date	Mar 20, 2018

Abstract

A sensor device is disclosed. The sensor device include: a detector having a contact formation region; an insulating layer disposed over the detector; a conductive pad disposed over the insulating layer opposite to a side of the detector; a contact plug formed in the insulating layer for electrically coupling the contact implant region and the conductive pad; and a read-out integrated circuit bonded to the insulating layer through the conductive pad. An image sensor array and a manufacturing method of a sensor device are also disclosed.

First claim

What is claimed is:

1. A sensor device, comprising:
a detector, comprising:
a layer of first type conductivity;
an intrinsic layer for absorption of light;
a layer of second type conductivity opposite to the first type conductivity for carrier collection; and
a contact formation region in the layer of the second type conductivity;

an insulating layer disposed over the detector;
a conductive pad disposed over the insulating layer opposite to a side of the detector;
a contact plug formed in the insulating layer for electrically coupling the contact formation region and the conductive pad; and
a read-out integrated circuit bonded to the insulating layer through the conductive pad;
wherein a top surface of the contact formation region is coplanar with a top surface of the layer of the second type conductivity; and
a width of the top surface of the contact formation region is less than a width of the top surface of the layer of the second type conductivity.

2. The sensor device of claim 1 , wherein the read-out integrated circuit is hybrid bonded to the insulating layer through the conductive pad.

3. The sensor device of claim 1 , wherein the detector includes p/intrinsic/n (p-i-n) type conductivity.

4. The sensor device of claim 1 , wherein the layer of the first type conductivity and the layer of the second type conductivity include InP or Ge.

5. The sensor device of claim 1 , wherein the intrinsic layer includes InGaAs.

6. The sensor device of claim 1 , wherein the contact formation region is doped by the second type conductivity.

7. An image sensor array, comprising:
a semiconductor substrate;
a detector layer over the semiconductor substrate, wherein the detector layer includes a plurality of sensor pixels and a plurality of contact formation regions built in the top of the sensor pixels;
an insulating layer disposed over the detector layer;
a plurality of conductive pads corresponding to the plurality of contact formation regions, wherein the conductive pads are disposed over the insulating layer opposite to a side of the detector layer; and
a plurality of contact plugs formed in the insulating layer for electrically coupling the contact formation regions and the corresponding conductive pads;
wherein
each of sensor pixels includes a layer of first type conductivity, an intrinsic layer for absorption of light, and a layer of second type conductivity opposite to the first type conductivity for carrier collection;
each of the contact formation regions is formed in the layer of the second type conductivity of the corresponding sensor pixel;
a top surface of each of the contact formation regions is coplanar with a top surface of the layer of the second type conductivity of the corresponding sensor pixel; and
a width of the top surface of each of the contact formation regions is less than a width of the top surface of the layer of the second type conductivity of the corresponding sensor pixel.

8. The image sensor array of claim 7 , wherein the sensor pixels include p/intrinsic/n (p-i-n) type conductivity.

9. The image sensor array of claim 7 , further comprising a semiconductor layer of the first type conductivity at least formed on an interface between sidewalls of the layer of the second type conductivity and the insulating layer.

10. The image sensor array of claim 7 , further comprising a plurality of gate electrodes formed between the sensor pixels.

11. The image sensor array of claim 10 , further comprising a oxide layer formed between the gate electrodes and the sensor pixels.

12. The image sensor array of claim 7 , wherein the layer of the first type conductivity and the layer of the second type conductivity include InP.

13. The image sensor array of claim 7 , wherein the intrinsic layer includes InGaAs.

14. The image sensor array of claim 7 , wherein the contact formation region is doped by the second type conductivity.

15. The image sensor array of claim 7 , further comprising a conductor layer patterned on the semiconductor substrate opposite to a side of the detector layer, wherein the conductor layer includes a plurality of contacts distanced according to a pixel pitch of the sensor pixels in the detector layer.

16. The image sensor array of claim 7 , further comprising a buffer layer between the semiconductor substrate and the detector layer.

17. A manufacturing method of a sensor device, comprising:
providing a semiconductor substrate;
forming a layer of first type conductivity over the semiconductor substrate;
forming an intrinsic layer for absorption of light over the layer of the first type conductivity;
forming a layer of second type conductivity for carrier collection over the intrinsic layer;
removing a portion of the intrinsic layer and the layer of the second type conductivity to form a plurality of isolated p-i-n detectors;
forming a plurality of contact formation regions at top of the p-i-n detectors;
wherein
a top surface of each of the contact formation regions is coplanar with a top surface of the layer of the second type conductivity of the corresponding p-i-n detector; and
a width of the top surface of each of the contact formation regions is less than a width of the top surface of the layer of the second type conductivity of the corresponding p-i-n detector;

forming an insulating layer over the p-i-n detectors;
forming a plurality of contact plugs in the insulating layer; and
forming a plurality of conductive pads over the insulating layer, wherein the conductive pads are coupled to the contact formation regions through the contact plugs.

Assignees

• Taiwan Semiconductor Mfg Co Ltd

Inventors

• Yamashita Yuichiro
• Huang Kuo-Chin
• Wang Tzu-Jui
• Kalnitsky Alexander

Classifications

• H01L27/14643 Primary

  Electricity · mapped topic

• H01L27/14636

  Electricity · mapped topic

• H01L31/03046

  Electricity · mapped topic

• H01L31/105

  Electricity · mapped topic

• H01L27/14634

  Electricity · mapped topic