Semiconductor device
US-2015349060-A1 · Dec 3, 2015 · US
Phosphorus doped diamond electrode with tunable low work function for emitter and collector applications
US9922791B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9922791-B2 |
| Application number | US-201715588362-A |
| Country | US |
| Kind code | B2 |
| Filing date | May 5, 2017 |
| Priority date | May 5, 2016 |
| Publication date | Mar 20, 2018 |
| Grant date | Mar 20, 2018 |
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- Title
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- Abstract
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Abstract
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An apparatus includes an emitter electrode including a phosphorus doped diamond layer with low work function. The apparatus further includes a collector electrode and a vacuum gap disposed between the emitter and the collector. The collector has a work function of 0.84 eV or less.
First claim
Opening claim text (preview).
What is claimed is: 1. An apparatus comprising: a thermionic electron emitter; a collector electrode comprising a phosphorus doped diamond layer; and a vacuum gap disposed between the emitter and the collector, wherein the collector has a work function of 0.84 eV or less. 2. The apparatus of claim 1 , wherein the phosphorus doped diamond layer has a thickness between 5 nm and 100 nm. 3. The apparatus of claim 1 , wherein the collector work function is no greater than 0.67 eV. 4. The apparatus of claim 1 , wherein the phosphorus doped diamond layer comprise a diamond upper surface disposed under at least one electrical contact. 5. The apparatus of claim 1 , wherein the collector further comprise a diamond substrate disposed under the phosphorus doped diamond layer. 6. The apparatus of claim 5 , wherein the collector further comprises a controlled interface disposed directly between the phosphorus doped diamond layer and the diamond substrate. 7. The apparatus of claim 5 , wherein the diamond substrate comprises a nitrogen doped single crystal diamond substrate. 8. The apparatus of claim 5 , wherein the diamond substrate comprises a nitrogen doped, single crystal, high-pressure, high-temperature or chemical vapor deposition (CVD) substrate with (100) surface orientation. 9. The apparatus of claim 8 , further comprising electrical contact in direct contact with the diamond substrate, wherein the thermionic electron emitter comprises a phosphorus doped diamond layer.
Assignees
Inventors
Classifications
Controlling or regulating (controlling or regulating in general G05) · CPC title
- H01J19/30Primary
characterised by the material · CPC title
Diamond · CPC title
Discharge tubes functioning as thermionic generators {(structural combination of fuel element with thermoelectric element G21C3/40; nuclear power plants using thermionic converters G21D7/04; structural combination of a radioactive source with a thermionic converter, e.g. radioisotope batteries G21H1/10; generators in which thermal or kinetic energy is converted into electrical energy by ionisation of a fluid and removal of the charge therefrom H02N3/00)} · CPC title
being specially pre-treated by, e.g. chemical or physical means · CPC title
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- What does patent US9922791B2 cover?
- An apparatus includes an emitter electrode including a phosphorus doped diamond layer with low work function. The apparatus further includes a collector electrode and a vacuum gap disposed between the emitter and the collector. The collector has a work function of 0.84 eV or less.
- Who is the assignee on this patent?
- Univ Arizona State
- What technology area does this patent fall under?
- Primary CPC classification H01J19/30. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Mar 20 2018 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 4 related publications on this page (citations in our corpus or others sharing the same primary CPC).