System And Method For Making A Structured Material
US-2024424553-A1 · Dec 26, 2024 · US
US9920414B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9920414-B2 |
| Application number | US-201314372391-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jan 14, 2013 |
| Priority date | Jan 16, 2012 |
| Publication date | Mar 20, 2018 |
| Grant date | Mar 20, 2018 |
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A method for producing a ceramic layer on a surface formed from a Ni base alloy, includes the following steps: producing on the surface a ceramic layer containing ZrO 2 as a main constituent; producing a gas phase having a temperature in the range from 400 to 900° C., in which a vapor formed from a salt melt with the components alkali chloride, alkali sulphate and ZnCl 2 is contained in a carrier gas formed from an inert gas with an addition from 0.5 to 10% by weight HCl; and bringing the ceramic layer into contact with the gas phase for a period of time that is sufficient for an intermediate layer having a thickness of at least 0.1 μm to form between the ceramic layer and the surface.
Opening claim text (preview).
The invention claimed is: 1. A method for producing a ceramic layer on a surface formed from a Ni base alloy containing Cr in a quantity from 5 to 25% by weight, comprising: producing on the surface a ceramic layer comprising ZrO 2 ; producing a gas phase having a temperature in the range from 400 to 900° C., and containing gas phase components formed from a salt melt including components of alkali chloride, alkali sulphate and ZnCl 2 , and a carrier gas formed from an inert gas with 0.5 to 10% by weight HCl, the components included in the salt melt being contained essentially in equimolar composition; and bringing the ceramic layer into contact with the gas phase for a period of time that is sufficient for an intermediate layer having a thickness of at least 0.1 μm to form between the ceramic layer and the surface, wherein ZrO 2 is contained in the ceramic layer and the gas components are contained in the gas phase, such that the gas phase components contained in the gas phase form a quaternary eutectic with ZrO 2 in the range from 400 to 900° C., and the HCl contained in the gas phase reacts with Cr contained in the Ni base alloy to form chromium chlorides, thereby forming the intermediate layer between the ceramic layer and the surface in the step of bringing the ceramic layer into contact with the gas phase. 2. The method according to claim 1 , wherein the Ni base alloy contains Cr in a quantity from 15 to 25% by weight. 3. The method according to claim 1 , wherein the ceramic layer is produced by means of physical vapor deposition or by thermal spraying. 4. The method according to claim 1 , wherein the ceramic layer further contains Y 2 O 3 in order to stabilise the ZrO 2 . 5. The method according to claim 1 , wherein the ceramic layer further contains Al 2 O 3 . 6. The method according to claim 5 , wherein the ceramic layer contains 30 to 70 mol % of Al 2 O 3 . 7. The method according to claim 1 , wherein N 2 is used as the inert gas. 8. The method according to claim 1 , wherein the inert gas contains 1.0 to 4.0% by weight HCl. 9. The method according to claim 1 , wherein the components in the salt melt further contain ZnSO 4 . 10. The method according to claim 1 , wherein the components in the salt melt contain following components: KCl—K 2 SO 4 —ZnCl 2 —ZnSO 4 . 11. The method according to claim 1 , wherein the ceramic layer is brought into contact with the gas phase for the period of time that is sufficient for the intermediate layer having a thickness from 0.5 to 5.0 μm to form between the ceramic layer and the surface. 12. The method according to claim 1 , wherein the period of time is from 1 to 100 hours. 13. The method according to claim 12 , wherein the period of time is from 20 to 75 hours.
After-treatment · CPC title
After-treatment · CPC title
Plasma spraying · CPC title
of refractory metals or yttrium · CPC title
by physical vapour deposition · CPC title
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