Halogen free synthesis of aminosilanes by catalytic dehydrogenative coupling

US9920078B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9920078-B2
Application numberUS-201615245559-A
CountryUS
Kind codeB2
Filing dateAug 24, 2016
Priority dateSep 27, 2013
Publication dateMar 20, 2018
Grant dateMar 20, 2018

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  1. Title

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  2. Abstract

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  5. First independent claim

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Abstract

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Compounds and method of preparation of Si—X and Ge—X compounds (X═N, P, As and Sb) via dehydrogenative coupling between the corresponding unsubstituted silanes and amines (including ammonia) or phosphines catalyzed by metallic catalysts is described. This new approach is based on the catalytic dehydrogenative coupling of a Si—H and a X—H moiety to form a Si—X containing compound and hydrogen gas (X═N, P, As and Sb). The process can be catalyzed by transition metal heterogenous catalysts such as Ru(0) on carbon, Pd(0) on MgO) as well as transition metal organometallic complexes that act as homogeneous catalysts. The —Si—X products produced by dehydrogenative coupling are inherently halogen free. Said compounds can be useful for the deposition of thin films by chemical vapor deposition or atomic layer deposition of Si-containing films.

First claim

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We claim: 1. A halogen free precursor compound having the formula: where E=Si; n 1 =1; n 2 =1; k=1; R 1 and R 2 =silyl; R 3 and R 4 are independently selected from H, linear or branched C 1 to C 6 alkyl, linear or branched C 1 to C 8 alkenyl, linear or branched C 1 to C 8 alkynyl, C 6 to C 10 aryl, linear or branched C 1 to C 6 alkyl ether; and the detectable amount of halogen is less than 5 ppm. 2. The halogen free precursor compound of claim 1 , wherein R 3 and R 4 ═C 1 to C 6 alkyl. 3. The halogen free precursor compound of claim 2 , wherein R 3 and R 4 =Et. 4. The halogen free precursor compound of claim 2 , wherein R 3 and R 4 =iPr. 5. A method of preparing a precursor compound having the formula: where E=Si, n 1 =1; n 2 =1; k=1; R 1 and R 2 =silyl; R 3 and R 4 are independently selected from H, linear or branched C 1 to C 6 alkyl, linear or branched C 1 to C 8 alkenyl, linear or branched C 1 to C 8 alkynyl, C 6 to C 10 aryl, linear or branched C 1 to C 6 alkyl ether; the amino groups may be bound to any E atom, comprising: a) contacting the reactants R 1 R 2 NH and R 3 R 4 NH and E k H 2(k+1) in the presence of a transition metal catalyst forming a reaction mixture; b) optionally adding a solvent to the reaction mixture; c) maintaining the reaction mixture at a temperature between about 0° C. to about 300° C.; d) allowing the reaction to proceed to form the (R 1 R 2 N) n1 (R 3 R 4 N) n2 E k H (2(k+1)−n1−n2) precursor compound; e) separating the (R 1 R 2 N) n1 (R 3 R 4 N) n2 E k H (2(k+1)−n1−n2) precursor compound from the reaction mixture; wherein the reaction mixture temperature may vary during the synthesis and is maintained such that the temperature of the reaction mixture is not allowed to drop below about 0° C. and not exceed about 300° C. 6. The method of claim 5 , wherein the catalyst is selected from the group consisting of Ru, Pd, Rh, Ir, Fe, Ni, Pt, Cr, Cu and Au. 7. The method of claim 5 , wherein R 3 and R 4 ═C 1 to C 6 alkyl. 8. The method of claim 7 , wherein R 3 and R 4 =Et. 9. The method of claim 7 , wherein R 3 and R 4 =iPr.

Assignees

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Classifications

  • the compound comprising silicon and nitrogen · CPC title

  • of semiconductor materials · CPC title

  • Chromium · CPC title

  • C07F7/025Primary

    without C-silicon linkages · CPC title

  • using fluidised bed process · CPC title

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What does patent US9920078B2 cover?
Compounds and method of preparation of Si—X and Ge—X compounds (X═N, P, As and Sb) via dehydrogenative coupling between the corresponding unsubstituted silanes and amines (including ammonia) or phosphines catalyzed by metallic catalysts is described. This new approach is based on the catalytic dehydrogenative coupling of a Si—H and a X—H moiety to form a Si—X containing compound and hydrogen ga…
Who is the assignee on this patent?
Air Liquide
What technology area does this patent fall under?
Primary CPC classification C07F7/025. Mapped technology areas include Chemistry & Metallurgy.
When was this patent published?
Publication date Tue Mar 20 2018 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 1 related publication on this page (citations in our corpus or others sharing the same primary CPC).