Solar cell

Patent metadata

Field	Value
Publication number	US-9917219-B2
Application number	US-201414449198-A
Country	US
Kind code	B2
Filing date	Aug 1, 2014
Priority date	Sep 4, 2013
Publication date	Mar 13, 2018
Grant date	Mar 13, 2018

Abstract

A solar cell includes: a crystal silicon substrate of a first conductivity type including a first principal surface and a second principal surface; a first amorphous silicon film of a second conductivity type provided on a side of the first principal surface; and a second amorphous silicon film of the first conductivity type provided on a side of the second principal surface. At least one of the first amorphous silicon film and the second amorphous silicon film has a multi-layer structure comprising layers. An oxygen-rich layer is provided between any adjacent two of the amorphous silicon layers in the multi-layer structure.

First claim

What is claimed is:

1. A solar cell comprising:
a crystal silicon substrate of a first conductivity type including a first principal surface and a second principal surface;
a first amorphous silicon film of a second conductivity type provided on a side of the first principal surface;
a second amorphous silicon film of the first conductivity type provided on a side of the second principal surface; and
an intrinsic amorphous silicon film, wherein
at least one of the first amorphous silicon film and the second amorphous silicon film has a first dopant layer; a second dopant layer; and an oxygen-rich layer provided between the first dopant layer and the second dopant layer, the first dopant layer being closer to the crystal silicon substrate than the second dopant layer, the second dopant layer having a higher dopant concentration than the first dopant layer, wherein the first dopant layer and second dopant layer have the same conductivity type,
the intrinsic amorphous silicon film is provided between the crystal silicon substrate and the first amorphous silicon film or the second amorphous silicon film that includes the oxygen-rich layer, and
the oxygen-rich layer has a higher oxygen concentration than the first and second dopant layers, and the oxygen concentration in the oxygen-rich layer is in a range of 1×10 19 cc −1 to 1×10 22 cc −1 .

2. The solar cell according to claim 1 , wherein the first conductivity type or the second conductivity type is p-type.

3. The solar cell according to claim 1 , wherein the first conductivity type or the second conductivity type is n-type.

4. The solar cell according to claim 1 , wherein
the oxygen-rich layer is provided in each of the first amorphous silicon film and the second amorphous silicon film.

5. The solar cell according to claim 1 , wherein
the oxygen-rich layer is provided between adjacent two of the first and second dopant layers.

6. The solar cell according to claim 1 , wherein
at least one of the first amorphous silicon film and the second amorphous silicon film has a multi-layer structure including amorphous silicon layers, and
an oxygen-rich layer is provided between every adjacent two of the amorphous silicon layers in the multi-layer structure.

7. The solar cell according to claim 1 , wherein a second intrinsic amorphous silicon film is provided between the crystal silicon substrate and the other amorphous silicon film of the first amorphous silicon film or the second amorphous silicon film that includes the oxygen-rich layer.

8. The solar cell according to claim 1 , wherein
the first amorphous silicon film or the second amorphous silicon film that includes the oxygen-rich layer has amorphous silicon layers, and
the oxygen concentration in the oxygen-rich layer is in a range of 1.5 times to 1000 times the oxygen concentration in the amorphous silicon layer adjacent thereto.

9. The solar cell according to claim 1 , wherein
the oxygen concentration in the oxygen-rich layer is in a range of 5×10 19 cc −1 to 5×10 21 cc −1 .

10. The solar cell according to claim 1 , wherein
the thickness of the oxygen-rich layer is in a range of 0.5 nm to 10.0 nm.

11. The solar cell according to claim 10 , wherein
the thickness of the oxygen-rich layer is in a range of 1.0 nm to 5.0 nm.

12. The solar cell according to claim 1 , wherein
at least one of the first amorphous silicon film and the second amorphous silicon film has a multi-layer structure including amorphous silicon layers, and
the dopant concentrations in the amorphous silicon layers are 1×10 20 cc −1 or more.

13. The solar cell according to claim 1 , wherein
at least one of the first amorphous silicon film and the second amorphous silicon film has a multi-layer structure including amorphous silicon layers, and
the total thickness of the amorphous silicon layers is in a range of 1 nm to 20 nm.

14. The solar cell according to claim 1 , further comprising a transparent electrode on an outside surface of the first amorphous silicon film or the second amorphous silicon film that includes the oxygen-rich layer, the transparent electrode being made of a transparent conductive oxide, wherein
the second dopant layer is closer to the transparent electrode than the first dopant layer.

15. A solar cell comprising:
a crystal silicon substrate of a first conductivity type including a first principal surface and a second principal surface;
a first amorphous silicon film of a second conductivity type provided on a side of the first principal surface;
a second amorphous silicon film of the first conductivity type provided on a side of the second principal surface; and
an intrinsic amorphous silicon film, wherein
at least one of the first amorphous silicon film and the second amorphous silicon film has a first dopant layer; a second dopant layer; and an oxygen-rich layer provided between the first dopant layer and the second dopant layer, the first dopant layer being closer to the crystal silicon substrate than the second dopant layer, the second dopant layer having a higher dopant concentration than the first dopant layer, wherein the first dopant layer and second dopant layer have the same conductivity type,
the intrinsic amorphous silicon film is provided between the crystal silicon substrate and the first amorphous silicon film or the second amorphous silicon film that includes the oxygen-rich layer, and
the oxygen-rich layer has a higher oxygen concentration than the first and second dopant layers.

16. The solar cell according to claim 15 , wherein the first conductivity type or the second conductivity type is p-type.

17. The solar cell according to claim 15 , wherein the first conductivity type or the second conductivity type is n-type.

18. The solar cell according to claim 15 , wherein
the oxygen-rich layer is provided in each of the first amorphous silicon film and the second amorphous silicon film.

19. The solar cell according to claim 15 , wherein
the oxygen-rich layer is provided between adjacent two of the first and second dopant layers.

20. The solar cell according to claim 15 , wherein a second intrinsic amorphous silicon film is provided between the crystal silicon substrate and the other amorphous silicon film of the first amorphous silicon film or the second amorphous silicon film that includes the oxygen-rich layer.

Assignees

• Sanyo Electric Co
• Panasonic Ip Man Co Ltd

Inventors

• Yano Ayumu

Classifications

• H01L31/0747

  Electricity · mapped topic

• Y02E10/548

  Amorphous silicon PV cells · CPC title

• H01L31/03762 Primary

  Electricity · mapped topic

• H01L31/028

  Electricity · mapped topic

• Y02E10/547

  Monocrystalline silicon PV cells · CPC title