BSI image sensor and method of forming same

Patent metadata

Field	Value
Publication number	US-9917121-B2
Application number	US-201615079886-A
Country	US
Kind code	B2
Filing date	Mar 24, 2016
Priority date	Mar 24, 2016
Publication date	Mar 13, 2018
Grant date	Mar 13, 2018

Abstract

A backside illumination (BSI) image sensor and a method of forming the same are provided. A method includes forming a plurality of photosensitive pixels in a substrate, the substrate having a first surface and a second surface, the second surface being opposite the first surface, the substrate having one or more active devices on the first surface. A first portion of the second surface is protected. A second portion of the second surface is patterned to form recesses in the substrate. An anti-reflective layer is formed on sidewalls of the recesses. A metal grid is formed over the second portion of the second surface, the anti-reflective layer being interposed between the substrate and the metal grid.

First claim

What is claimed is:

1. A method comprising:
forming a plurality of photosensitive regions in a substrate, the substrate having a first surface and a second surface, the second surface being opposite the first surface, the substrate having at least one active device on the first surface;
forming a metal grid over a first portion of the second surface, the metal grid exposing portions of the substrate;
recessing exposed portions of the substrate to form recesses in the substrate;
forming an anti-reflective layer on sidewalls of the recesses and sidewalls of the metal grid; and
filling the recesses with a first dielectric layer, the first dielectric layer extending above a topmost surface of the metal grid.

2. The method of claim 1 , further comprising forming a metal shield on a second portion of the second surface, the first dielectric layer extending above a topmost surface of the metal shield.

3. The method of claim 2 , further comprising forming the anti-reflective layer on a sidewall of the metal shield.

4. The method of claim 1 , wherein forming the metal grid comprises:
depositing a second dielectric layer over the first portion of the second surface;
depositing a metal layer over the second dielectric layer;
depositing a third dielectric layer over the metal layer; and
patterning the second dielectric layer, the third dielectric layer, and the metal layer.

5. The method of claim 1 , wherein recessing the exposed portions of the substrate comprises performing an anisotropic wet etching of the substrate.

6. The method of claim 1 , wherein portions of the substrate interposed between neighboring recesses are arranged in a rectangular array.

7. The method of claim 1 , further comprising, before recessing the exposed portions of the substrate, forming a second dielectric layer over the metal grid, the second dielectric layer extending along sidewalls of the metal grid.

8. A method comprising:
forming a plurality of photosensitive pixels in a substrate, the substrate having a first surface and a second surface, the second surface being opposite the first surface, the substrate having one or more active devices on the first surface;
depositing a metal layer over the second surface of the substrate;
patterning the metal layer to form a metal grid over a pixel array region of the substrate and a metal shield over a black level correction (BLC) region of the substrate; and
patterning the substrate in the pixel array region to form a plurality of recesses in the substrate, wherein the metal grid is used as a mask, and wherein one or more of the plurality of recesses are disposed over each of the plurality of photosensitive pixels.

9. The method of claim 8 , further comprising
forming an anti-reflective layer on sidewalls of the plurality of recesses and sidewalls of the metal grid; and
filling the plurality of recesses with a first dielectric layer, the first dielectric layer extending above a topmost surface of the metal grid.

10. The method of claim 8 , further comprising:
depositing a first dielectric layer over the second surface of the substrate; and
depositing a second dielectric layer over the first dielectric layer, wherein the metal layer is disposed between the first dielectric layer and the second dielectric layer.

11. The method of claim 10 , wherein patterning the metal layer further comprises:
patterning the first dielectric layer and the second dielectric layer.

12. The method of claim 8 , wherein portions of the substrate interposed between adjacent ones of the plurality of recesses have a uniform width and a uniform pitch.

13. The method of claim 8 , wherein the recesses are arranged in a rectangular array.

14. The method of claim 8 , wherein sidewalls of the plurality of recesses are slanted.

15. A method comprising:
forming a plurality of photosensitive devices in a substrate, the substrate having a pixel array region and a black level correction (BLC) region adjacent the pixel array region;
forming an interconnect structure on a first surface of the substrate;
depositing a first dielectric layer over a second surface of the substrate, the second surface of the substrate being opposite the first surface of the substrate, the substrate being disposed between the interconnect structure and the first dielectric layer;
depositing a metal layer over the first dielectric layer;
depositing a second dielectric layer over the metal layer;
etching the second dielectric layer, the metal layer and the first dielectric layer to form a metal grid over the pixel array region of the substrate and a metal shield over the BLC region of the substrate; and
patterning the substrate in the pixel array region to form recesses in the substrate, wherein the metal grid is used as a mask;
conformally depositing an anti-reflective layer over the recesses, the metal grid, and the metal shield; and
filling the recesses with a third dielectric layer, the third dielectric layer extending above a topmost surface of the metal shield.

16. The method of claim 15 , wherein the third dielectric layer extends above a topmost surface of the metal grid.

17. The method of claim 15 , further comprising:
forming a plurality of microlenses over the third dielectric layer, wherein each of the plurality of microlenses is aligned with respect to a corresponding one of the plurality of photosensitive devices.

18. The method of claim 15 , further comprising:
before patterning the substrate, forming a patterned mask over the metal shield, the patterned mask exposing the metal grid.

19. The method of claim 15 , further comprising:
before depositing the metal layer, patterning the first dielectric layer to form one or more openings in the first dielectric layer, the one or more openings exposing the second surface of the substrate; and
depositing a barrier layer over the first dielectric layer and in the one or more openings.

20. The method of claim 19 , wherein etching the second dielectric layer, the metal layer and the first dielectric layer further comprises etching the barrier layer.

Assignees

• Taiwan Semiconductor Mfg Co Ltd

Inventors

• Hsu Hung-Wen
• Lu Jiech-Fun
• Tu Yeur-Luen
• Chen U-Ting
• Tsai Shu-Ting
• Cheng Hsiu-Yu

Classifications

• H01L27/14623

  Electricity · mapped topic

• H01L27/1462 Primary

  Electricity · mapped topic

• H01L27/1464

  Electricity · mapped topic

• H01L27/14685

  Electricity · mapped topic

• H10F39/014

  of CMOS image sensors · CPC title