Liquid crystal display device and method for manufacturing the same

Patent metadata

Field	Value
Publication number	US-9917112-B2
Application number	US-201615088200-A
Country	US
Kind code	B2
Filing date	Apr 1, 2016
Priority date	Sep 13, 2010
Publication date	Mar 13, 2018
Grant date	Mar 13, 2018

Abstract

Provided is a method to manufacture a liquid crystal display device in which a contact hole for the electrical connection of the pixel electrode and one of the source and drain electrode of a transistor and a contact hole for the processing of a semiconductor layer are formed simultaneously. The method contributes to the reduction of a photography step. The transistor includes an oxide semiconductor layer where a channel formation region is formed.

First claim

What is claimed is:

1. A display device comprising:
a transistor comprising:
a gate electrode;
an gate insulating layer over the gate electrode;
a first oxide semiconductor layer over the gate insulating layer;
a first metal oxide layer over and in contact with the first oxide semiconductor layer; and
a first conductive layer over and in contact with the first metal oxide layer, the first conductive layer electrically connected to the first oxide semiconductor layer; and

a connecting portion comprising:
a second conductive layer;
the gate insulating layer over the second conductive layer;
an second oxide semiconductor layer over the gate insulating layer;
a second metal oxide layer over and in contact with the second oxide semiconductor layer;
a contact hole provided in the gate insulating layer, the second oxide semiconductor layer, and the second metal oxide layer; and
a third conductive layer electrically connected to the second conductive layer through the contact hole,

wherein the third conductive layer is in contact with a side surface of each of the gate insulating layer, the second oxide semiconductor layer, and the second metal oxide layer.

2. The display device according to claim 1 , wherein the gate electrode and the second conductive layer are provided on a same surface.

3. The display device according to claim 1 ,
wherein the gate electrode and the second conductive layer comprise a first layer and a second layer on the first layer, and
wherein the first layer comprises titanium and the second layer comprises copper.

4. The display device according to claim 1 , wherein the first oxide semiconductor layer and the second oxide semiconductor layer are provided on a same surface of the gate insulating layer.

5. The display device according to claim 1 , wherein the first oxide semiconductor layer and the second conductive layer comprise indium and zinc, and further comprising one of gallium, tin, hafnium, and aluminum.

6. The display device according to claim 1 ,
wherein the first metal oxide layer and the second metal oxide layer are continuous, and
wherein the first metal oxide layer and the second metal oxide layer comprise one of silicon oxide, silicon oxynitride, hafnium oxide, aluminum oxide, and gallium oxide.

7. The display device according to claim 1 , wherein the first conductive layer and the third conductive layer comprise a same material.

8. The display device according to claim 1 , wherein the first conductive layer and the third conductive layer comprise a light-transmitting conductive material.

9. The display device according to claim 1 , further comprising a source electrode and a drain electrode electrically connected to the first oxide semiconductor layer,
wherein an edge portion of each of the source electrode and the drain electrode is provided inside of an edge of the first oxide semiconductor layer.

10. A display device comprising:
a transistor comprising:
a gate electrode;
an gate insulating layer over the gate electrode;
a first oxide semiconductor layer over the gate insulating layer;
a first metal oxide layer over and in contact with the first oxide semiconductor layer; and
a first conductive layer over and in contact with the first metal oxide layer, the first conductive layer electrically connected to the first oxide semiconductor layer; and

a connecting portion comprising:
a second conductive layer;
the gate insulating layer over the second conductive layer;
an second oxide semiconductor layer over the gate insulating layer;
a second metal oxide layer over and in contact with the second oxide semiconductor layer;
a contact hole provided in the gate insulating layer, the second oxide semiconductor layer, and the second metal oxide layer; and
a third conductive layer electrically connected to the second conductive layer through the contact hole,

wherein the third conductive layer is in contact with a side surface of each of the gate insulating layer, the second oxide semiconductor layer, and the second metal oxide layer, and
wherein a portion of the side surface of the second oxide semiconductor layer is projected from a portion of the side surface of the second metal oxide layer.

11. The display device according to claim 10 , wherein the gate electrode and the second conductive layer are provided on a same surface.

12. The display device according to claim 10 ,
wherein the gate electrode and the second conductive layer comprise a first layer and a second layer on the first layer, and
wherein the first layer comprises titanium and the second layer comprises copper.

13. The display device according to claim 10 , wherein the first oxide semiconductor layer and the second oxide semiconductor layer are provided on a same surface of the gate insulating layer.

14. The display device according to claim 10 , wherein the first oxide semiconductor layer and the second conductive layer comprise indium and zinc, and further comprising one of gallium, tin, hafnium, and aluminum.

15. The display device according to claim 10 ,
wherein the first metal oxide layer and the second metal oxide layer are continuous, and
wherein the first metal oxide layer and the second metal oxide layer comprise one of silicon oxide, silicon oxynitride, hafnium oxide, aluminum oxide, and gallium oxide.

16. The display device according to claim 10 , wherein the first conductive layer and the third conductive layer comprise a same material.

17. The display device according to claim 10 , wherein the first conductive layer and the third conductive layer comprise a light-transmitting conductive material.

18. The display device according to claim 10 , further comprising a source electrode and a drain electrode electrically connected to the first oxide semiconductor layer,
wherein an edge portion of each of the source electrode and the drain electrode is provided inside of an edge of the first oxide semiconductor layer.

19. The display device according to claim 1 , wherein the first metal oxide layer and the second metal oxide layer comprise indium and zinc.

20. The display device according to claim 10 , wherein the first metal oxide layer and the second metal oxide layer comprise indium and zinc.

21. The display device according to claim 1 , wherein the first conductive layer and the third conductive layer are formed by etching a same conductive layer.

22. The display device according to claim 10 , wherein the first conductive layer and the third conductive layer are formed by etching a same conductive layer.

23. The display device according to claim 1 , further comprising:
a fourth conductive layer over the transistor,
wherein:
the fourth conductive layer contains indium zinc oxide, and
the fourth conductive layer overlaps with a channel formation region of the first oxide semiconductor layer.

24. The display device according to claim 10 , further comprising:
a fourth conductive layer over the transistor,
wherein:
the fourth conductive layer contains indium zinc oxide, and
the fourth conductive layer overlaps with a channel formation region of the first oxide semiconductor layer.

25. An electronic device comprising the display device according to claim 1 , wherein the electronic device is one selected from a liquid crystal display device, a sheet-type computer, a television device, a cellular phone, and an electronic book.

Assignees

• Semiconductor Energy Lab

Inventors

• Yamazaki Shunpei
• Hatano Kaoru

Classifications

• G02F1/136227

  Through-hole connection of the pixel electrode to the active element through an insulation layer · CPC title

• G02F1/1362

  Active matrix addressed cells {(G02F1/134336, G02F1/134363 take precedence)} · CPC title

• G02F1/1343

  Electrodes {(reflective electrodes G02F1/133553)} · CPC title

• G02F1/1333 Primary

  Constructional arrangements; {Manufacturing methods}(G02F1/135, G02F1/136 take precedence) · CPC title

• G02F1/136213

  Storage capacitors associated with the pixel electrode · CPC title