Semiconductor device and method of manufacturing the same

Patent metadata

Field	Value
Publication number	US-9917091-B2
Application number	US-201515312759-A
Country	US
Kind code	B2
Filing date	May 28, 2015
Priority date	Jun 11, 2014
Publication date	Mar 13, 2018
Grant date	Mar 13, 2018

Abstract

A method of manufacturing a semiconductor device, includes: forming an insulating film on a first surface of a semiconductor substrate; and forming a hydrogen supply film on a second surface facing the first surface of the semiconductor substrate, the hydrogen supply film containing one or more of silicon oxide, TEOS, BPSG, BSG, PSG, FSG, carbon-containing silicon oxide, silicon nitride, carbon-containing silicon nitride, and oxygen-containing silicon carbide.

First claim

The invention claimed is:

1. A method of manufacturing a semiconductor device, comprising:
forming an insulating film on a first surface of a semiconductor substrate;
forming a hydrogen supply film on a second surface, facing the first surface, of the semiconductor substrate,
wherein the hydrogen supply film comprises at least one of silicon oxide, tetraethoxysilane (TEOS), boron phosphorus silicate glass (BPSG), borosilicate glass (BSG), phosphosilicate glass (PSG), fluorosilicate glass (FSG), carbon-containing silicon oxide, silicon nitride, carbon containing silicon nitride, or oxygen-containing silicon carbide; and

forming a diffusion prevention film on the hydrogen supply film.

2. The method of manufacturing the semiconductor device according to claim 1 , further comprising performing heat treatment after forming the hydrogen supply film.

3. The method of manufacturing the semiconductor device according to claim 1 , wherein the hydrogen supply film is formed in contact with the second surface of the semiconductor substrate.

4. The method of manufacturing the semiconductor device according to claim 1 , further comprising bonding a supporting substrate onto the semiconductor substrate with the insulating film in between.

5. The method of manufacturing the semiconductor device according to claim 4 , wherein a logic circuit is in the supporting substrate.

6. The method of manufacturing the semiconductor device according to claim 4 , wherein after bonding the supporting substrate, a thickness of the semiconductor substrate is reduced to form the second surface.

7. The method of manufacturing the semiconductor device according to claim 1 , wherein the diffusion prevention film comprises at least one of silicon nitride, silicon oxynitride, low-dielectric constant carbon-containing silicon oxide, or silicon carbide.

8. The method of manufacturing the semiconductor device according to claim 1 , wherein a transistor having a source region and a drain region in the semiconductor substrate is formed, and a capacitor layer including the insulating film and a capacitor is formed, and the drain region of the transistor is electrically coupled to the capacitor.

9. The method of manufacturing the semiconductor device according to claim 8 , further comprising forming a wiring layer on the capacitor layer.

10. The method of manufacturing the semiconductor device according to claim 9 , wherein a connection hole is formed, wherein the connection hole penetrates the hydrogen supply film, the semiconductor substrate, and the insulating film, and wherein one end of the connection hole connects to the wiring layer.

11. A semiconductor device, comprising:
a semiconductor substrate having a first surface and a second surface, wherein the first surface faces the second surface;
an insulating film on the first surface of the semiconductor substrate;
a hydrogen supply film on the second surface of the semiconductor substrate,
wherein the hydrogen supply film comprises at least one of silicon oxide, tetraethoxysilane (TEOS), boron phosphorus silicate glass (BPSG), borosilicate glass (BSG), phosphosilicate glass (PSG), fluorosilicate glass (FSG), carbon-containing silicon oxide, silicon nitride, carbon-containing silicon nitride, or oxygen-containing silicon carbide; and

a diffusion prevention film on the hydrogen supply film.

Assignees

• Sony Corp

Inventors

• Kugimiya Katsuhisa
• Murata Kenichi
• Okano Hitoshi
• Mori Shigetaka
• Kawashima Hiroyuki
• Matsuno Takuma

Classifications

• H10P95/94 Primary

  Hydrogenation or deuterisation, e.g. using atomic hydrogen from a plasma · CPC title

• H01L27/10847 Primary

  Electricity · mapped topic

• H01L27/14634

  Electricity · mapped topic

• H01L27/108

  Electricity · mapped topic

• H01L27/1462

  Electricity · mapped topic