Optical waveguide structure with waveguide coupler to facilitate off-chip coupling

Patent metadata

Field	Value
Publication number	US-9915784-B2
Application number	US-201514819531-A
Country	US
Kind code	B2
Filing date	Aug 6, 2015
Priority date	Sep 5, 2013
Publication date	Mar 13, 2018
Grant date	Mar 13, 2018

Abstract

Aspects of the invention are directed to a method for forming an optical waveguide structure. Initially, a base film stack is received with an optical waveguide feature covered by a lower dielectric layer. An etch stop feature is then formed on the lower dielectric layer, and an upper dielectric layer is formed over the etch stop feature. Subsequently, a trench is patterned in the upper dielectric layer and the etch stop feature at least in part by utilizing the etch stop feature as an etch stop. Lastly, a waveguide coupler feature is formed in the trench, at least a portion of the waveguide coupler feature having a refractive index higher than the lower dielectric layer and the upper dielectric layer. The waveguide coupler feature is positioned over at least a portion of the optical waveguide feature but is separated from the optical waveguide feature by a portion of the lower dielectric layer.

First claim

What is claimed is:

1. A film stack comprising:
an optical waveguide feature;
a lower dielectric layer covering the optical waveguide feature;
a waveguide coupler feature disposed over at least a portion of the optical waveguide feature with the waveguide coupler feature entirely separated from the optical waveguide feature by a portion of the lower dielectric layer so that no part of the waveguide coupler feature directly contacts the optical waveguide feature; and
an upper dielectric layer flanking at least a portion of the waveguide coupler feature and in direct contact with the waveguide coupler feature;
wherein the waveguide coupler feature is characterized by a refractive index higher than the lower dielectric layer and the upper dielectric layer.

2. The film stack of claim 1 , wherein the optical waveguide feature consists essentially of silicon or silicon nitride.

3. The film stack of claim 1 , wherein the lower dielectric layer and the upper dielectric layer consist essentially of silicon oxide.

4. The film stack of claim 1 , wherein the waveguide coupler feature consists essentially of silicon oxynitride.

5. The film stack of claim 1 , wherein at least a portion of the waveguide coupler feature has a refractive index greater than about 1.45.

6. The film stack of claim 1 , further comprising an etch stop feature flanking at least a portion of the waveguide coupler feature.

7. The film stack of claim 6 , wherein the etch stop feature consists essentially of silicon nitride.

8. The film stack of claim 1 , wherein the waveguide coupler feature is characterized by a height greater than that of the optical waveguide feature.

9. The film stack of claim 1 , wherein the waveguide coupler feature is able to receive light signals from the optical waveguide feature.

10. The film stack of claim 1 , wherein the waveguide coupler feature is able to transmit light signals to the optical waveguide feature.

11. The film stack of claim 1 , further comprising:
a substrate; and
a base dielectric layer separating the optical waveguide feature from the substrate.

12. An integrated circuit comprising:
an optical waveguide feature;
a lower dielectric layer covering the optical waveguide feature;
a waveguide coupler feature disposed over at least a portion of the optical waveguide feature with the waveguide coupler feature entirely separated from the optical waveguide feature by a portion of the lower dielectric layer so that no part of the waveguide coupler feature directly contacts the optical waveguide feature; and
an upper dielectric layer flanking at least a portion of the waveguide coupler feature and in direct contact with the waveguide coupler feature;
wherein the waveguide coupler feature is characterized by a refractive index higher than the lower dielectric layer and the upper dielectric layer.

13. The integrated circuit of claim 12 , wherein the waveguide coupler feature terminates in an edge of the integrated circuit.

14. The integrated circuit of claim 12 , wherein the waveguide coupler feature consists essentially of silicon oxynitride.

15. A system including an integrated circuit, the integrated circuit comprising:
an optical waveguide feature;
a lower dielectric layer covering the optical waveguide feature;
a waveguide coupler feature disposed over at least a portion of the optical waveguide feature with the waveguide coupler feature entirely separated from the optical waveguide feature by a portion of the lower dielectric layer so that no part of the waveguide coupler feature directly contacts the optical waveguide feature; and
an upper dielectric layer flanking at least a portion of the waveguide coupler feature and in direct contact with the waveguide coupler feature;
wherein the waveguide coupler feature is characterized by a refractive index higher than the lower dielectric layer and the upper dielectric layer.

16. The system of claim 15 , wherein the waveguide coupler feature terminates in an edge of the integrated circuit.

17. The system of claim 15 , further comprising an off-chip device distinct from the integrated circuit and aligned with the waveguide coupler feature so as to be operative to receive light signals from the waveguide coupler feature.

18. The system of claim 17 , wherein the off-chip device comprises at least one of an optical fiber, a laser, a light emitting diode, a photodetector, and an optical amplifier.

19. The system of claim 15 , further comprising an off-chip device distinct from the integrated circuit and aligned with the waveguide coupler feature so as to be operative to transmit light signals to the waveguide coupler feature.

20. The system of claim 19 , wherein the off-chip device comprises at least one of an optical fiber, a laser, a light emitting diode, a photodetector, and an optical amplifier.

Assignees

• IBM

Inventors

• Budd Russell A
• Doany Fuad E
• Jahnes Christopher V
• Lee Benjamin G
• Schares Laurent

Classifications

• G02B6/12002

  Three-dimensional structures · CPC title

• G02B6/136 Primary

  by etching · CPC title

• G02B6/12

  of the integrated circuit kind (electric integrated circuits H10B, H10D84/00 - H10D89/00, H10F19/00, H10F39/00, H10H29/00, H10K19/00, H10K39/00, H10K59/00, H10N19/00, H10N39/00, H10N59/00, H10N69/00, H10N79/00, H10N89/00) · CPC title

• G02B6/132

  by deposition of thin films · CPC title

• G02B6/305

  and having an integrated mode-size expanding section, e.g. tapered waveguide · CPC title