Bias control circuit and power amplification module

Patent metadata

Field	Value
Publication number	US-9912300-B2
Application number	US-201715435442-A
Country	US
Kind code	B2
Filing date	Feb 17, 2017
Priority date	Aug 28, 2014
Publication date	Mar 6, 2018
Grant date	Mar 6, 2018

Abstract

Provided is a bias control circuit that includes: a reference voltage circuit that generates a reference voltage; a resistor; a temperature dependent current generating circuit that generates a temperature dependent current, which changes depending on temperature, on the basis of the reference voltage and that supplies the temperature dependent current to one end of the resistor; a reference voltage buffer circuit that applies the reference voltage to the other end of the resistor; a constant current generating circuit that generates a constant current, which is for driving the reference voltage buffer circuit, on the basis of the reference voltage and that supplies the constant current to the other end of the resistor; and a bias generating circuit that generates a bias voltage or a bias current for a power amplification circuit on the basis of the voltage at the one end of the resistor.

First claim

The invention claimed is:

1. A bias control circuit comprising:
a reference voltage circuit that generates a reference voltage;
a resistor;
a temperature dependent current generating circuit that generates a temperature dependent current and that supplies the temperature dependent current to a first end of the resistor, the temperature dependent current being based on the reference voltage and changing depending on a temperature;
a reference voltage buffer circuit that applies the reference voltage to a second end of the resistor;
a constant current generating circuit that generates a constant current and the supplies the constant current to the second end of the resistor, for the constant current being based on the reference voltage and driving the reference voltage buffer circuit; and
a bias generating circuit that generates a bias voltage or a bias current for a power amplification circuit based on a voltage at the first end of the resistor.

2. The bias control circuit according to claim 1 , wherein:
the reference voltage buffer circuit includes an operational amplifier and a P-channel MOSFET,
the reference voltage is applied to a first input terminal of the operational amplifier,
a second input terminal of the operational amplifier and a source of the P-channel MOSFET are connected to the second end of the resistor, and
an output terminal of the operational amplifier is connected to a gate of the P-channel MOSFET.

3. The bias control circuit according to claim 2 , wherein the first input is a non-inverting input and the second input is an inverting input.

4. The bias control circuit according to claim 1 ,
wherein the bias generating circuit includes an amplification circuit that amplifies the voltage at the first end of the resistor and outputs the bias voltage.

5. The bias control circuit according to claim 2 ,
wherein the bias generating circuit includes an amplification circuit that amplifies the voltage at the first end of the resistor and outputs the bias voltage.

6. The bias control circuit according to claim 1 ,
wherein the bias generating circuit includes a voltage-current converting circuit that converts the voltage at the first end of the resistor into the bias current.

7. The bias control circuit according to claim 2 ,
wherein the bias generating circuit includes a voltage-current converting circuit that converts the voltage at the first end of the resistor into the bias current.

8. The bias control circuit according to claim 1 ,
wherein the temperature dependent current generating circuit includes a second resistor, a third resistor, and a diode, and
the temperature dependent current is based in part on a product of a coefficient and a difference between the reference voltage and a forward voltage of the diode.

9. The bias control circuit according to claim 8 , wherein:
the temperature dependent current generating circuit further includes four P-channel MOSFETs and two N-channel MOSFETs, and
the coefficient corresponds to ratios of sizes of the four P-channel MOSFETs and two N-channel MOSFETs.

10. The bias control circuit according to claim 1 , wherein:
the constant current generating circuit includes a second resistor, and
the constant current is equal to a product of a coefficient and the reference voltage divided by a resistance of the second resistor.

11. The bias control circuit according to claim 10 , wherein:
the constant current generating circuit further includes two P-channel MOSFETs, and
the coefficient corresponds to a ratio of sizes of the two P-channel MOSFETs.

12. A power amplification module comprising:
the bias control circuit according to claim 1 ; and
a power amplification circuit that amplifies an input signal on the basis of the bias voltage or the bias current output from the bias control circuit and outputs the amplified input signal.

Assignees

• Murata Manufacturing Co

Inventors

• Harasawa Yoshiaki
• Morisawa Fuminori

Classifications

• H03F1/301 Primary

  in MOSFET amplifiers (H03F1/303, H03F1/305, H03F1/308 take precedence) · CPC title

• G05F3/20

  using diode- transistor combinations (G05F3/18 takes precedence) · CPC title

• H03F3/245

  with semiconductor devices only · CPC title

• H03F2200/555

  A voltage generating circuit being realised for biasing different circuit elements · CPC title

• H03F2200/451

  the amplifier being a radio frequency amplifier · CPC title