Power storage device

US9911973B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9911973-B2
Application numberUS-201414472962-A
CountryUS
Kind codeB2
Filing dateAug 29, 2014
Priority dateSep 16, 2011
Publication dateMar 6, 2018
Grant dateMar 6, 2018

How to read this patent

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  1. Title

    What the patent document calls the invention.

  2. Abstract

    A short plain-language summary of the technical disclosure.

  3. Assignees and inventors

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  4. Key dates

    Filing, priority, publication, and grant dates set the timeline.

  5. First independent claim

    The legal scope of protection — read this for what is actually claimed.

  6. CPC / IPC classifications

    Technology tags used to group this patent with similar filings.

  7. Citations and related patents

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Abstract

Official abstract text for this publication.

A power storage device which has high charge/discharge capacity and less deterioration in battery characteristics due to charge/discharge and can perform charge/discharge at high speed is provided. A power storage device includes a negative electrode. The negative electrode includes a current collector and an active material layer provided over the current collector. The active material layer includes a plurality of protrusions protruding from the current collector and a graphene provided over the plurality of protrusions. Axes of the plurality of protrusions are oriented in the same direction. A common portion may be provided between the current collector and the plurality of protrusions.

First claim

Opening claim text (preview).

What is claimed is: 1. A power storage device comprising: a negative electrode comprising: an active material layer comprising: a common portion; a first protrusion protruding from the common portion; a second protrusion protruding from the common portion; and a spacer layer over the first protrusion and the second protrusion; a positive electrode over the spacer layer; and a first electrolyte, wherein the spacer layer comprises any one of an acrylic resin, an epoxy resin, silicon resin, polyimide, polyamide and a low-melting-point glass material, wherein the first protrusion includes a bottom portion in contact with the common portion and a top portion, and wherein the spacer layer has a planar shape which comprises an opening. 2. The power storage device according to claim 1 , wherein each of the first protrusion and the second protrusion comprises an active material. 3. The power storage device according to claim 2 , wherein the active material is silicon. 4. The power storage device according to claim 1 , wherein the spacer layer comprises a second electrolyte. 5. The power storage device according to claim 4 , wherein the second electrolyte is a solute of the first electrolyte. 6. The power storage device according to claim 1 , wherein first axis of the first protrusion and second axis of the second protrusion are oriented in a same direction. 7. The power storage device according to claim 1 , wherein a side surface of the spacer layer is curved. 8. The power storage device according to claim 2 , wherein the common portion comprises the active material. 9. The power storage device according to claim 1 , wherein each of the first protrusion and the second protrusion comprises phosphorus or boron as an impurity. 10. The power storage device according to claim 1 , wherein the first protrusion has translation symmetry. 11. The power storage device according to claim 1 , wherein in a longitudinal cross-sectional shape, a width of the bottom portion of the first protrusion which is in contact with the common portion is 0.1 to 1 μm. 12. A power storage device comprising: A negative electrode comprising: an active material layer comprising: a common portion; a first protrusion protruding from the common portion; a second protrusion protruding from the common portion; a spacer layer over the first protrusion and the second protrusion; a positive electrode in contact the spacer layer; and a first electrolyte, wherein the spacer layer comprises any one of an acrylic resin, an epoxy resin, silicon resin, polyimide, polyamide and a low-melting-point glass material, wherein the first protrusion includes a bottom portion in contact with the common portion and a top portion, and wherein the spacer layer has a planar shape which comprises an opening. 13. The power storage device according to claim 12 , wherein the spacer layer comprises the first electrolyte. 14. The power storage device according to claim 12 , wherein the power storage device further comprises a second electrolyte. 15. The power storage device according to claim 12 , wherein first axis of the first protrusion and second axis of the second protrusion are oriented in a same direction. 16. The power storage device according to claim 12 , wherein a side surface of the spacer is curved. 17. The power storage device according to claim 1 , further comprising a graphene over the common portion and the first protrusion, wherein the graphene is in contact with a side surface of the first protrusion. 18. The power storage device according to claim 12 , further comprising a graphene over the common portion and the first protrusion, wherein the graphene is in contact with a side surface of the first protrusion. 19. The power storage device according to claim 1 , wherein the opening has a closed circular or polygonal loop shape. 20. The power storage device according to claim 12 , wherein the opening has a closed circular or polygonal loop shape.

Assignees

Inventors

Classifications

  • Energy storage using batteries · CPC title

  • H01M4/134Primary

    Electrodes based on metals, Si or alloys · CPC title

  • of electrodes based on metals, Si or alloys · CPC title

  • as layered products · CPC title

  • Silicon or alloys based on silicon · CPC title

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Frequently asked questions

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What does patent US9911973B2 cover?
A power storage device which has high charge/discharge capacity and less deterioration in battery characteristics due to charge/discharge and can perform charge/discharge at high speed is provided. A power storage device includes a negative electrode. The negative electrode includes a current collector and an active material layer provided over the current collector. The active material layer i…
Who is the assignee on this patent?
Semiconductor Energy Lab
What technology area does this patent fall under?
Primary CPC classification H01M4/134. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Mar 06 2018 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 2 related publications on this page (citations in our corpus or others sharing the same primary CPC).