Semiconductor light-emitting device

Patent metadata

Field	Value
Publication number	US-9911902-B2
Application number	US-201615375333-A
Country	US
Kind code	B2
Filing date	Dec 12, 2016
Priority date	Dec 16, 2015
Publication date	Mar 6, 2018
Grant date	Mar 6, 2018

Abstract

A semiconductor light-emitting device includes a first conductivity-type semiconductor including a first electrode on a first main surface, a second conductivity-type semiconductor, and an active layer between a second main surface of the first conductivity-type semiconductor and a first main surface of the second conductivity-type semiconductor. Protrusions are disposed in at least part of a region of a second main surface of the second conductivity-type semiconductor facing the first electrode. A second electrode is disposed in at least part of a region of the second main surface of the second conductivity-type semiconductor except the region having the protrusions. The protrusions containing a dielectric material protrude from the second main surface of the second conductivity-type semiconductor in a direction away from the active layer and are separated by intervals longer than the wavelength of light emitted from the active layer in the medium of the protrusions.

First claim

What is claimed is:

1. A semiconductor light-emitting device containing Al x Ga y N (where, 0<x≦1, 0≦y<1), comprising:
a first conductivity type semiconductor;
a second conductivity type semiconductor;
an active layer between the first conductivity type semiconductor and the second conductivity type semiconductor, the active layer being defined by a single continuous layer;
a first electrode disposed on a first main surface of the first conductivity type semiconductor;
a second electrode disposed on a second main surface of the second conductivity type semiconductor; and
a plurality of protrusions disposed on the second main surface of the second conductivity type semiconductor and facing the first electrode with the active layer interposed therebetween, wherein
the first main surface of the first conductivity type semiconductor faces the second main surface of the second conductivity type semiconductor with the first conductivity type semiconductor, the active layer, and the second conductivity type semiconductor interposed therebetween,
the protrusions are disposed in at least a portion of a region of the second main surface of the second conductivity type semiconductor facing the first electrode,
the second electrode is disposed in at least a portion of a region of the second main surface of the second conductivity type semiconductor other than the portion of the region in which the protrusions are disposed,
the protrusions protrude from the second main surface of the second conductivity type semiconductor in a direction away from the active layer,
the protrusions contain a dielectric material, and
the protrusions are separated by an interval longer than a wavelength of light emitted from the active layer in a medium of the protrusions.

2. The semiconductor light-emitting device according to claim 1 , further comprising a metal layer covering the protrusions.

3. The semiconductor light-emitting device according to claim 1 , further comprising:
an electrically conductive substrate; and
an electrically conductive bonding layer to bond the electrically conductive substrate and a metal layer together.

4. The semiconductor light-emitting device according to claim 1 , wherein
the second conductivity type semiconductor has a thickness smaller than a thickness of the first conductivity type semiconductor and the wavelength of light emitted from the active layer in the medium of the protrusions, and
the protrusions have a greater thickness than the second conductivity type semiconductor.

5. The semiconductor light-emitting device according to claim 1 , wherein a region of the first main surface of the first conductivity type semiconductor in which the first electrode is not disposed has a larger total area than a region in which the first electrode is disposed.

6. The semiconductor light-emitting device according to claim 1 , further comprising a projection in at least a portion of the second conductivity type semiconductor, the projection extending in a direction away from the active layer.

7. The semiconductor light-emitting device according to claim 6 , wherein the second electrode is disposed on the projection of the second conductivity type semiconductor.

8. The semiconductor light-emitting device according to claim 6 , wherein the projection of the second conductivity type semiconductor includes magnesium.

9. The semiconductor light-emitting device according to claim 6 , wherein the protrusions are disposed in the region other than the projection of the second conductivity type semiconductor.

10. The semiconductor light-emitting device according to claim 1 , wherein
the second electrode includes first line electrodes extending in a first direction and a second line electrode extending in a second direction, and
the first line electrodes cross the second line electrode.

11. The semiconductor light-emitting device according to claim 1 , further comprising a plurality of the second electrodes separated from each other.

12. The semiconductor light-emitting device according to claim 1 , wherein the first electrode and the second electrode are comb-shaped and interdigitated.

13. The semiconductor light-emitting device according to claim 1 , wherein the protrusions are quadrangular pyramids.

14. The semiconductor light-emitting device according to claim 1 , wherein the protrusions have a shape of stripes of triangular prisms extending along a periphery of the semiconductor light-emitting device.

15. The semiconductor light-emitting device according to claim 1 , wherein the protrusions have a triangular cross section and, in a triangular cross section of one of the protrusions closest to a periphery of the semiconductor light-emitting device, a side of the closest protrusion adjacent to the periphery of the semiconductor light-emitting device is longer than a side of the closest protrusion away from the periphery of the semiconductor light-emitting device.

16. The semiconductor light-emitting device according to claim 1 , wherein one of the protrusions which is closest to a periphery of the semiconductor light-emitting device has a right-angled triangular cross section in which a side of the one of the protrusions adjacent to the periphery of the semiconductor light-emitting device is longer than an inner side of the one of the protrusions.

17. The semiconductor light-emitting device according to claim 1 , wherein the semiconductor light-emitting device has an emission wavelength in the range of 220 nm to 350 nm.

18. The semiconductor light-emitting device according to claim 1 , wherein intervals between the protrusions are 660 nm or more.

Assignees

• Sharp Kk

Inventors

• Sawamura Makoto
• Yamamoto Shuhichiroh
• Ito Shigetoshi

Classifications

• H01L33/20

  Electricity · mapped topic

• H01L33/38

  Electricity · mapped topic

• H01L33/32 Primary

  Electricity · mapped topic

• H01L33/0008

  Electricity · mapped topic

• H01L33/62

  Electricity · mapped topic