Nitride-based III-V group compound semiconductor

Patent metadata

Field	Value
Publication number	US-9911894-B2
Application number	US-201514689892-A
Country	US
Kind code	B2
Filing date	Apr 17, 2015
Priority date	Sep 22, 2005
Publication date	Mar 6, 2018
Grant date	Mar 6, 2018

Abstract

A method for manufacturing a light-emitting diode, which includes the steps of: providing a substrate having a plurality of protruded portions on one main surface thereof wherein the protruded portion is made of a material different in type from that of the substrate and growing a first nitride-based III-V Group compound semiconductor layer on each recess portion of the substrate through a state of making a triangle in section wherein a bottom surface of the recess portion becomes a base of the triangle; laterally growing a second nitride-based III-V Group compound semiconductor layer on the substrate from the first nitride-based III-V Group compound semiconductor layer; and successively growing, on the second nitride-based III-V Group compound semiconductor layer, a third nitride-based III-V Group compound semiconductor layer of a first conduction type, an active layer, and a fourth nitride-based III-V compound semiconductor layer of a second conduction type.

First claim

What is claimed is:

1. A light-emitting diode comprising:
a first nitride-based III-V compound semiconductor layer with oppositely facing first and second planar surfaces;
a plurality of similarly shaped protruding portions embedded within the first nitride-based III-V semiconductor layer such that the protruding portions extend from the second surface into the first nitride-based III-V semiconductor layer, the protruding portions being spaced apart from each other along the second planar surface, each protruding portion being triangular or trapezoidal in cross section with a base at the second planar surface and inclined surfaces which are inclined relative to the second surface at angles between 100° to 160°; and
a second nitride-based III-V compound semiconductor layer of a first conduction type, an active layer, and a third nitride-based III-V compound semiconductor layer of a second conduction type formed on said first nitride-based III-V compound semiconductor layer,
wherein,
along the cross section, each of the protruding portions bases has a width P, and the first nitride-based III-V compound semiconductor layer has second surface bases between the protruding portions bases, each of which has a width R,
a ratio of P to R is from 0.5 to 3,
the first nitride-based III-V compound semiconductor layer has (a) a thickness exceeding a height of the protruding portions, as measured from the second surface, and (b) for each second surface base, a threading dislocation with a first leg that extends vertically from a center of the second surface base to a point higher than the height of the protruding portions, a second leg that extends horizontally from the first leg to a point over a center of one of the protruding portions, and a third leg that extends vertically from the second leg to the first surface of the first nitride-based III-V compound semiconductor layer, and
each first leg defines a center line of a equilateral triangular first growth phase of the first nitride-based III-V compound semiconductor layer.

2. A semiconductor device comprising a light emitting diode according to claim 1 .

3. A light source cell unit comprising: a plurality of cells each containing at least one of each of a red light-emitting diode, a green light-emitting diode and a blue light-emitting diode, at least one light-emitting diode selected from the red light-emitting diode, green light-emitting diode and blue light-emitting diode on a printed wiring board, the at least one light-emitting diode being a light emitting diode according to claim 1 .

4. An electronic device comprising a light emitting diode according to claim 1 .

5. The light emitting diode of claim 1 , wherein the inclined surfaces of the protruding portions are inclined relative to the second surface at angles between 132° to 139°.

6. The light emitting diode of claim 5 , wherein the inclined surfaces of the protruding portions are inclined relative to the second surface at angles between 147° to 154°.

7. The semiconductor device of claim 6 , wherein the inclined surfaces of the protruding portions are inclined relative to the second surface at angles between 135° to 152°.

8. The semiconductor device of claim 1 , wherein:
the first nitride-based III-V compound semiconductor layer has a first growth layer and a second growth layer which have a same composition or different compositions,
between adjacent protruding portions, the first growth layer is triangular in shape with a base of the triangular shape at the second surface,
the first growth layer contains vertically extending threading dislocations, including the first leg, but not horizontally extending threading dislocations,
the second growth layer extends from the first growth layer and the protruding portions up to the first surface, and
the second growth layer contains horizontally and vertically extending threading dislocations, including the second leg and third leg of the threading dislocation.

9. The semiconductor device of claim 8 , wherein the first growth layer and the second growth layer have the same composition.

10. The semiconductor device of claim 8 , wherein the first growth layer and the second growth layer have different compositions.

11. The semiconductor device of claim 8 , wherein, given a height d of the protruding portions relative to the second surface, a width W g of the second bases, and an angle α made between inclined surfaces of the triangular shape of the first growth layer relative to the second surface, a relationship of 2d≧W g tan α holds.

12. The semiconductor device of claim 11 , wherein:
0.5 μm≦d≦5 μm; and
0.5 μm≦W g ≦5 μm.

13. The semiconductor device of claim 12 , wherein:
d=1.0 μm+/−0.2 μm; and
W g =2.0 μm+/−0.5 μm.

14. The semiconductor device of claim 12 , wherein each protruding portion is trapezoidal in the cross section and an upper surface has a width W t that is 1.0 μm to 1000 μm.

15. The semiconductor device of claim 14 , wherein W t is 4.0 μm+/−2.0 μm.

16. A display device comprising:
a first nitride-based III-V compound semiconductor layer with oppositely facing first and second planar surfaces; and
a plurality of similarly shaped protruding portions embedded within the first nitride-based III-V semiconductor layer such that the protruding portions extend from the second surface into the first nitride-based III-V semiconductor layer, the protruding portions being spaced apart from each other along the second surface, each protruding portion being triangular or trapezoidal in cross section with a base at the second planar surface; and
a plurality of light-emitting diodes on the first nitride-based III-V compound semiconductor layer, each comprising a second nitride-based III-V compound semiconductor layer of a first conduction type, an active layer, and a third nitride-based III-V compound semiconductor layer of a second conduction type formed on said first nitride-based III-V compound semiconductor layer,
wherein,
along the cross section, each of the protruding portions bases has a width P, and the first nitride-based III-V compound semiconductor layer has second surface bases between the protruding portions bases, each of which has a width R,
a ratio of P to R is from 0.5 to 3,
the first nitride-based III-V compound semiconductor layer has (a) a thickness exceeding a height of the protruding portions, as measured from the second surface, and (b) for each second surface base, a threading dislocation with a first leg that extends vertically from a center of the second surface base to a point higher than the height of the protruding portions, a second leg that extends horizontally from the first leg to a point over one of the protruding portions, and a third leg that extends vertically from the second leg to the first surface of the first nitride-based III-V compound semiconductor layer, and
each first leg defines a center line of a equilateral triangular first growth phase of the first nitride-based III-V compound semiconductor layer.

17. An electronic device comprising a display device according claim 16 .

18. A light-emitting diode backlight comprising:
a first nitride-based III-V compound semiconductor layer with oppositely facing first and second planar surfaces; and
a plurality of similarly shaped protruding portions embedded within the first nitride-based III-V semiconductor layer such that the protruding portions extend from the second surface into the first nitride-based III-V semiconductor layer, the protruding portions being spaced apart from each other along the s

Assignees

• Sony Corp

Inventors

• Ohmae Akira
• Shiomi Michinori
• Futagawa Noriyuki
• Ami Takaaki
• Miyajima Takao
• Hiramatsu Yuuji
• Hatada Izuho
• Okano Nobukata
• Tomiya Shigetaka
• Yanashima Katsunori
• Hino Tomonori
• Narui Hironobu

Classifications

• H10P14/3416

  Nitrides · CPC title

• H10P14/3252

  Alternating layers, e.g. superlattice · CPC title

• H10P14/3216

  Nitrides · CPC title

• H10P14/3202

  Materials thereof · CPC title

• H10P14/276

  Lateral overgrowth · CPC title