Method for the low-temperature production of radial-junction semiconductor nanostructures, radial junction device, and solar cell including radial-junction nanostructures

Patent metadata

Field	Value
Publication number	US-9911892-B2
Application number	US-201314370598-A
Country	US
Kind code	B2
Filing date	Jan 3, 2013
Priority date	Jan 4, 2012
Publication date	Mar 6, 2018
Grant date	Mar 6, 2018

Abstract

A method for the low-temperature production of radial electronic junction semiconductor nanostructures on a substrate, includes: a) forming on the substrate, metal aggregates capable of electronically doping a first semiconductor material; b) growing, in the vapor phase, doped semiconductor nanowires in the presence of one or more non-dopant precursor gases of the first semiconductor material, the substrate being heated to a temperature at which the metal aggregates are in the liquid phase, the growth of the doped semiconductor nanowires in the vapor phase being catalyzed by the metal aggregates; c) rendering the residual metal aggregates inactive; and d) the chemical vapor deposition, in the presence of one or more precursor gases and a dopant gas, of at least one thin film of a second semiconductor material so as to form at least one radial electronic junction nanostructure between the nanowire and the at least one doped thin film.

First claim

The invention claimed is:

1. A method for the low-temperature production of at least one radial-electronic-junction semiconductor nanostructure on a substrate ( 1 ), said method comprising the following steps:
a) formation of metal aggregates on said substrate ( 2 ), said metal aggregates being capable of electronically doping a first semiconductor material with a first doping type,
b) vapour-phase growth of doped semiconductor nanowires ( 2 ) in said first semiconductor material on said substrate ( 2 ) covered with metal aggregates, said substrate ( 1 ) being heated to a temperature higher than or equal to the eutectic temperature of said metal aggregates, the vapour-phase growth of doped semiconductor nanowires ( 2 ) being catalyzed by said metal aggregates in the presence of one or several precursor gases of said first semiconductor material, said one or several precursor gases being non-dopant gases,
c) inactivation of the residual metal aggregates,
d) chemical vapour deposition in the presence of one or several precursor gases and one dopant gas of at least one thin layer ( 4 ) of a second semiconductor material on said doped semiconductor nanowires ( 2 ), said dopant gas being capable of electronically doping said second semiconductor material with a second doping type, and said at least one thin layer ( 4 ) of a second semiconductor material being conformally deposited on said doped semiconductor nanowires ( 1 ) to form at least one radial-electronic-junction nanostructure between said semiconductor nanowires ( 2 ) doped with a first doping type and said at least one thin layer ( 4 ) doped with a second doping type,
said steps of a) formation of metal aggregates, b) growth of doped semiconductor nanowires, c) inactivation of metal aggregates and d) chemical vapour deposition being performed successively in a same vacuum deposition chamber.

2. The method for the production of a least one radial-electronic-junction semiconductor nanostructure according to claim 1 , comprising an intermediate step between step c) of inactivation of the residual metal aggregates and step d) of chemical vapour deposition of at least one thin layer of a second doped semiconductor material, said intermediate step comprising a step of chemical vapour deposition in the presence of one or several precursor gases of another thin layer ( 3 ) of a third intrinsic semiconductor material, conformally on said doped semiconductor nanowires ( 2 ), said doped semiconductor nanowires ( 2 ) being p-doped and said at least one thin layer ( 4 ) of a second semiconductor material being n-doped to form p-i-n radial-electronic-junction semiconductor nanostructures, or respectively said doped semiconductor nanowires ( 2 ) being n-doped and said at least one thin layer ( 4 ) of a second semiconductor material being p-doped to form n-i-p radial-electronic-junction semiconductor nanostructures.

3. The method for the production of a least one radial-electronic-junction semiconductor nanostructure according to claim 1 , wherein step c) of inactivation of the residual metal aggregates comprises a step of reduction of the temperature down to a temperature lower than the eutectic temperature of said metal aggregates and/or a step of chemical vapour etching and/or a step of application of a hydrogen-reducing plasma.

4. The method for the production of a least one radial-electronic-junction semiconductor nanostructure according to claim 1 , wherein step d) of chemical deposition of at least one thin layer ( 4 ) of a second doped semiconductor material comprises a step of chemical vapour deposition or a step of plasma-enhanced chemical vapour deposition, in the presence of a gas mixture comprising a precursor gas of the second semiconductor material and a dopant gas.

5. The method for the production of a least one radial-electronic-junction semiconductor nanostructure according to claim 1 , wherein said first semiconductor material, said second semiconductor material and/or said third semiconductor material are chosen among silicon and germanium.

6. The method for the production of a least one radial-electronic-junction semiconductor nanostructure according to claim 5 , wherein said first semiconductor material is p-doped crystalline silicon and said second semiconductor material is n-doped amorphous silicon, and/or said third semiconductor material is intrinsic amorphous silicon.

7. The method for the production of a least one radial-electronic-junction semiconductor nanostructure according to claim 1 , wherein step a) of formation of metal aggregates comprises the formation of aggregates consisted of bismuth, gallium or an alloy of tin and a material chosen among bismuth, indium and gallium, bismuth and the bismuth and tin alloy being capable of producing a n-type electronic doping in silicon, gallium and the tin and gallium or indium alloy being capable of producing a p-type electronic doping in silicon.

8. The method for the production of a least one radial-electronic-junction semiconductor nanostructure according to claim 2 , wherein said thin layer ( 3 ) of a third intrinsic semiconductor material includes amorphous silicon, and in that said method includes an additional step after step c) of inactivation of the residual metal aggregates and before the step of deposition of said thin layer ( 3 ) of intrinsic amorphous silicon, said additional step comprising a step of chemical vapour deposition in the presence of one or several precursor gases of an amorphous thin layer of a semiconductor material having the same doping type as the doped semiconductor nanowires ( 2 ), conformally on said doped semiconductor nanowires ( 2 ).

9. The method for the production of a least one radial-electronic-junction semiconductor nanostructure according to claim 1 , comprising at least one following additional step after step d):
e) deposition of at least one other stack of a plurality of thin layers of semiconductor material, said at least one other stack of thin layers being deposited conformally on said at least one radial-electronic-junction semiconductor nanostructure and said plurality of thin layers having a respective doping adapted to form at least one double-radial-electronic-junction semiconductor nanostructure.

10. The method for the production of a least one radial-electronic-junction semiconductor nanostructure according to claim 1 , wherein the temperature of the substrate during steps a) b) c) and d) remains lower than 400° C.

11. The method for the production of a least one radial-electronic-junction semiconductor nanostructure according to claim 1 , wherein the substrate is a non-textured metal substrate, crystalline or polycrystalline silicon, glass, polymer or plastic material.

12. The method for the production of a least one radial-electronic-junction semiconductor nanostructure according to claim 2 , wherein step c) of inactivation of the residual metal aggregates comprises a step of reduction of the temperature down to a temperature lower than the eutectic temperature of said metal aggregates and/or a step of chemical vapour etching and/or a step of application of a hydrogen-reducing plasma.

Assignees

• Yu Linwei
• Roca I Cabarrocas Pere
• Total Sa
• Centre Nat Rech Scient
• Ecole Polytech

Inventors

• Yu Linwei
• Roca I Cabarrocas Pere

Classifications

• H10P14/3462

  Nanowires · CPC title

• H10P14/3444

  P-type · CPC title

• H10P14/3442

  N-type · CPC title

• H10P14/3411

  Silicon, silicon germanium or germanium · CPC title

• H10P14/3226

  Oxides · CPC title