Optical sensor package including a cavity formed in an image sensor die

Patent metadata

Field	Value
Publication number	US-9911890-B2
Application number	US-201615199390-A
Country	US
Kind code	B2
Filing date	Jun 30, 2016
Priority date	Jun 30, 2016
Publication date	Mar 6, 2018
Grant date	Mar 6, 2018

Abstract

One or more embodiments are directed to system in package (SiP) for optical devices, including proximity sensor packaging. One embodiment is directed to optical sensor that includes a substrate, an image sensor die and a light-emitting device. A first surface of the image sensor die is coupled to the substrate, and a recess is formed extending into the image sensor die from the first surface toward a second surface of the image sensor die. A light transmissive layer is formed in the image sensor die between the recess and the first surface. The optical sensor further includes a light-emitting device that is coupled to the substrate and positioned within the recess formed in the image sensor die.

First claim

The invention claimed is:

1. An optical sensor package comprising:
a substrate;
an image sensor die coupled to the substrate, the image sensor die comprising a semiconductor material and including:
a first surface coupled to the substrate,
a second surface,
a recess extending into the image sensor die from the first surface toward the second surface, the recess forming a cavity with a surface of the substrate, and
a light transmissive layer formed at the second surface and facing the recess; and

a light-emitting device coupled to the substrate and positioned within the cavity.

2. The optical sensor package of claim 1 , wherein the light transmissive layer of the image sensor die includes a light diffraction layer.

3. The optical sensor package of claim 1 , wherein the image sensor die is formed from silicon, wherein the light transmissive layer of the image sensor die is formed from the silicon of the image sensor die.

4. The optical sensor package of claim 1 , wherein the light transmissive layer of the image sensor die is an active layer configured to receive a control signal and, in response, to vary one or more optical characteristics of the light transmissive layer.

5. The optical sensor package of claim 4 , wherein the one or more optical characteristics includes at least one of diffraction, refractive index and polarization characteristics.

6. The optical sensor package of claim 1 , wherein the light-emitting device comprises at least one of a vertical cavity surface emitting laser (VCSEL) and a light-emitting diode (LED).

7. The optical sensor package of claim 1 , wherein the recess is a stepped recess that includes a first recess and a second recess that is smaller than the first recess, wherein the light-emitting device is positioned within the cavity formed by the first recess, wherein the light transmissive layer delimits a bottom surface of the second recess.

8. The optical sensor package of claim 7 , further comprising a cap positioned around side surfaces of the image sensor die and covering at least a portion of the second surface of the image sensor die, the cap having sidewalls and an inner wall, the inner wall optically separating the light-emitting device from an image sensor region of the image sensor die.

9. The optical sensor package of claim 8 , the image sensor die further including a reference sensor formed in the second surface and configured to receive light emitted from the light-emitting device and reflected from an inner surface of the cap.

10. A method comprising:
electrically and mechanically coupling a light-emitting device to a substrate;
placing an image sensor die having a recess over the light-emitting device such that the light-emitting device is located in the recess, the image sensor die including a semiconductor material; and
electrically and mechanically coupling the image sensor die to the substrate with the light-emitting device located in recess of the image sensor die.

11. The method of claim 10 , further comprising:
forming a recess in the image sensor die, the recess extending from a first surface of the image sensor die toward a second surface of the image sensor die;
forming a light transmissive layer between the recess and the second surface of the image sensor die.

12. The method of claim 11 , wherein forming a light transmissive layer includes forming an active light transmissive layer having one or more variable optical characteristics.

13. The method of claim 12 , wherein the one or more variable optical characteristics includes at least one of diffraction, refractive index and polarization characteristics.

14. The method of claim 11 , further comprising:
forming an image sensor in the second surface of the image sensor die.

15. The method of claim 14 , further comprising:
positioning a cap over the image sensor die, the cap including sidewalls and an inner wall, the cap having a first transparent region above the light-emitting device and a second transparent region above the image sensor.

16. The method of claim 10 , wherein coupling a light-emitting device to the substrate includes coupling a vertical cavity surface emitting laser (VCSEL) to the substrate.

17. The method of claim 10 , wherein coupling the image sensor die to the substrate comprises attaching the image sensor die to the substrate with an adhesive, the method further comprising securing a first end of a conductive wire to a pad of the image sensor die and securing a second end of the conductive wire to a pad of the substrate.

18. The method of claim 10 , wherein coupling the image sensor die to the substrate comprises electrically coupling the image sensor die to the substrate using flip chip configuration.

19. An electronic device comprising:
a microprocessor; and
an optical sensor package coupled to the microprocessor, the optical sensor package including:
a substrate;
an image sensor die coupled to the substrate, the image sensor die being made from silicon, the image sensor die including:
a first surface coupled to the substrate,
a second surface including an image sensor region,
a recess extending into the image sensor die from the first surface toward the second surface, and
a light transmissive layer formed at the second surface and facing the recess;

a light-emitting device coupled to the substrate and positioned within the cavity in the image sensor die; and
a cap positioned around side surfaces of the image sensor die and covering at least a portion of the second surface of the image sensor die, the cap having sidewalls and an inner wall, the inner wall optically separating the light-emitting device from the image sensor region.

20. The electronic device of claim 19 , wherein the light transmissive layer includes an active light transmissive layer having one or more variable optical characteristics.

21. The electronic device of claim 19 , wherein the electronic device is at least one of a cell phone, smartphone, tablet, camera, and a wearable computing device.

22. An optical sensor package comprising:
a substrate;
an image sensor die coupled to the substrate, the image sensor die comprising a semiconductor material and including:
a first surface coupled to the substrate,
a second surface,
a recess extending into the image sensor die from the first surface toward the second surface, the recess forming a cavity with a surface of the substrate; and

a light-emitting device coupled to the substrate and positioned within the cavity.

23. The optical sensor package of claim 22 , wherein the light-emitting device comprises at least one of a vertical cavity surface emitting laser (VCSEL) and a light-emitting diode (LED).

24. The optical sensor package of claim 22 , wherein the image sensor includes a through opening between the first surface and the recess, the through opening has a width that is smaller than a width of the recess.

Assignees

• St Microelectronics Pte Ltd

Inventors

• Renard Loic Pierre Louis
• Ang Cheng Lay

Classifications

• G01S7/4813

  Housing arrangements · CPC title

• H01S5/183

  having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] · CPC title

• Y02E10/50

  Photovoltaic [PV] energy · CPC title

• G01S17/08

  for measuring distance only (indirect measurement G01S17/46; active triangulation systems G01S17/48) · CPC title

• H01G9/20

  Light-sensitive devices · CPC title