Chalcogenide-based materials and improved methods of making such materials

Patent metadata

Field	Value
Publication number	US-9911887-B2
Application number	US-201715599949-A
Country	US
Kind code	B2
Filing date	May 19, 2017
Priority date	Mar 17, 2010
Publication date	Mar 6, 2018
Grant date	Mar 6, 2018

Abstract

The present invention provides strategies for making high quality CIGS photoabsorbing materials from precursor films that incorporate a sub-stoichiometric amount of chalcogen(s). Chalcogen(s) are incorporated into the CIGS precursor film via co-sputtering with one or more other constituents of the precursor. Optional annealing also may be practiced to convert precursor into more desirable chalcopyrite crystalline form in event all or a portion of the precursor has another constitution. The resultant precursors generally are sub-stoichiometric with respect to chalcogen and have very poor electronic characteristics. The conversion of these precursors into CIGS photoabsorbing material via chalcogenizing treatment occurs with dramatically reduced interfacial void content. The resultant CIGS material displays excellent adhesion to other layers in the resultant photovoltaic devices. Ga migration also is dramatically reduced, and the resultant films have optimized Ga profiles in the top or bottom portion of the film that improve the quality of photovoltaic devices made using the films.

First claim

What is claimed is:

1. A method of making a chalcogen-containing photoabsorbing composition, comprising the steps of:
(a) sputtering metals comprising Cu and Ga using at least one sputtering target in the presence of a chalcogen-containing gas or vapor comprising one or more chalcogens comprising Se to form a Se-containing precursor of the chalcogen-containing photoabsorber comprising co-deposited Se and Ga selectively incorporated into one or more portions of the precursor, and wherein the Se-containing precursor includes a sub-stoichiometric amount of the one or more chalcogens comprising Se in a top region and a bottom region of the precursor and a bottom region of the precursor, and wherein said sputtering comprises selectively co-depositing Se and Ga to form the bottom region of the precursor that comprises Ga and a sub-stoichiometric amount of Se and selectively co-depositing Se and Ga to form the top region of the precursor that comprises Ga and a sub-stoichiometric amount of Se, and wherein at least one region of the precursor between the top and bottom regions includes a reduced Ga content relative to the top and bottom regions; and
(b) subjecting the Se-containing precursor to a thermal treatment in the presence of one or more chalcogens comprising Se or Se and S to convert the precursor into a chalcogenide photoabsorbing material comprising top and bottom regions, where Ga is present in both the top and bottom regions.

2. The method of claim 1 , wherein step (b) comprises causing the precursor to contact a source of chalcogen under conditions effective to increase the chalcogen content of the precursor.

3. The method of claim 1 , wherein the precursor is at least partially amorphous.

4. The method of claim 1 , wherein step (a) comprises sputtering at least one chalcogen-containing target to form at least a portion of the precursor in the presence of a chalcogen containing gas or vapor.

5. The method of claim 1 , wherein the precursor comprises at least two metals selected from Cu, In, and Ga, and the atomic ratio of chalcogen to the cumulative amount of metals in the precursor is in the range from about 0.01 to 0.8.

6. The method of claim 1 , wherein the precursor comprises at least two metals selected from Cu, In, and Ga, and the atomic ratio of chalcogen to the cumulative amount of metals in the precursor is in the range from about 0.01 to 0.8.

Assignees

• Dow Global Technologies Llc

Inventors

• Gerbi Jennifer E
• Langlois Marc G
• Nilsson Robert T

Classifications

• H10P14/3436

  being chalcogenide semiconductor materials not being oxides, e.g. ternary compounds · CPC title

• H10P14/203

  using transformation of metal, e.g. oxidation or nitridation · CPC title

• H10P14/22

  using physical deposition, e.g. vacuum deposition or sputtering · CPC title

• C23C14/3464

  using more than one target (C23C14/56 takes precedence) · CPC title

• C23C14/0623 Primary

  Sulfides, selenides or tellurides · CPC title